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IXFK26N120P [IXYS]

Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
IXFK26N120P
型号： IXFK26N120P
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Polar Power MOSFET HiPerFET
Polar功率MOSFET HiperFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 PC 局域网
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PolarTM Power MOSFET  
HiPerFETTM  
IXFK26N120P  
IXFX26N120P  
VDSS = 1200V  
ID25 = 26A  
RDS(on) ≤ 460mΩ  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1200  
1200  
V
V
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
26  
60  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
13  
1.5  
A
J
(TAB)  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
960  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features:  
z Fast intrinsic diode  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
Md  
FC  
Mounting torque  
Mounting force  
(IXFK)  
(IXFX)  
1.13/10  
Nm/lb.in.  
N/lb  
z Low package inductance  
- easy to drive and to protect  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages:  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications:  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
1200  
V
V
z High Voltage Switched-mode and  
resonant-mode power supplies  
z High Voltage Pulse Power Applications  
z High Voltage Discharge circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
3.5  
6.5  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50  
5
μA  
mA  
TJ = 125°C  
z High Voltage DC-DC converters  
z High Voltage DC-AC inverters  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
460 mΩ  
DS99740G (04/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFK26N120P  
IXFX26N120P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1 MHz  
Gate input resistance  
13  
21  
S
Ciss  
Coss  
Crss  
14  
725  
50  
nF  
pF  
pF  
RGi  
1.5  
Ω
td(on)  
tr  
td(off)  
tf  
56  
55  
76  
58  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
225  
87  
nC  
nC  
nC  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
Qgd  
98  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
RthJC  
RthCS  
0.13 °C/W  
°C/W  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
0.15  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
R
R1  
6.07  
8.38  
3.81  
1.78  
6.27  
8.69  
4.32  
2.29  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
VGS = 0V  
26  
A
A
V
PLUS 247TM (IXFX) Outline  
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
104  
1.5  
VSD  
trr  
300  
ns  
μC  
A
IF = 13A, -di/dt = 100A/μs  
VR = 100V, VGS = 0V  
QRM  
IRM  
1.3  
12  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK26N120P  
IXFX26N120P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
7V  
8V  
7V  
6
4
2
0
0
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 13A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
9V  
VGS = 10V  
8V  
I D = 26A  
I D = 13A  
7V  
6V  
6
4
2
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 13A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
28  
24  
20  
16  
12  
8
2.4  
2.2  
2
VGS = 10V  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
TJ = 25ºC  
4
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
TC - Degrees Centigrade  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXFK26N120P  
IXFX26N120P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
0
0
0
5
10  
15  
20  
25  
30  
35  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 600V  
I D = 13A  
I G = 10mA  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
40  
80  
120  
160  
200  
240  
280  
320  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_26N120P(96) 3-28-08-B  

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