IXFK26N60Q [IXYS]

HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列


型号：	IXFK26N60Q
厂家：	IXYS CORPORATION
描述：	HiPerFET Power MOSFETs Q-Class HiPerFET功率MOSFET Q系列
文件：	总2页 (文件大小：105K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Advance Technical Information

HiPerFET^TM

Power MOSFETs

Q-Class

IXFK 26N60Q

IXFX 26N60Q

= 600 V

26 A

= 0.25 Ω

DSS

D25

DS(on)

t ≤ 250 ns

N-ChannelEnhancementMode

AvalancheRated, Highdv/dt, LowQ_g

Symbol

TestConditions

Maximum Ratings

PLUS247^TM(IXFX)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

600

V_GS

V_GSM

Continuous

Transient

±20

±30

D (TAB)

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

104

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

TO-264 AA (IXFK)

P_D

T_C= 25°C

360

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

T_L

1.6 mm (0.063 in) from case for 10 s

300

°C

G = Gate

S = Source

D = Drain

TAB = Drain

M_d

Mountingtorque

TO-264

0.9/6 Nm/lb.in.

Weight

PLUS-247

TO-264

Features

Low gate charge

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Avalanche energy and current rated

Fast intrinsic Rectifier

V_DSS

V_GS= 0 V, I_D= 250µA

600

2.5

V_GS(th)

V_DS= V_GS, I_D= 4 mA

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

25 µA

Advantages

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Easy to mount

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

0.25

Ω

Space savings

High power density

98919 (05/02)

IXFK 26N60Q

IXFX 26N60Q

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

PLUS247^TMOutline

V_DS= 10 V; I_D= 0.5 I_D25, pulse test

C_iss

C_oss

C_rss

5100

560

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

210

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

Terminals: 1-Gate

2 - Drain (Collector)

R_G= 2.0 Ω (External),

3 - Source (Emitter)

4 - Drain (Collector)

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

Q_g(on)

Q_gs

150 200

4.83

2.29

1.91

5.21

2.54

2.16

.190 .205

.090 .100

.075 .085

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

Q_gd

1.14

1.91

2.92

1.40

2.13

3.12

.045 .055

.075 .084

.115 .123

R_thJC

R_thCK

0.35 K/W

0.15 K/W

TO-264

C0.61

0.80

.024 .031

20.80 21.34

15.75 16.13

.819 .840

.620 .635

5.45

19.81 20.32

BSC.215

BSC

.780 .800

.150 .170

3.81

4.32

5.59

4.32

6.20

4.83

.220 0.244

.170 .190

Source-DrainDiode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Symbol

I_S

TestConditions

min.

typ. max.

TO-264 AA Outline

V_GS= 0 V

I_SM

Repetitive; pulse width limited by T_JM

104

1.5

V_SD

I_F= I_S, V_GS= 0 V,

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t_rr

Q_RM

I_RM

250

µC

I_F= I_S-di/dt = 100 A/µs, V_R= 100 V

Millimeter

Dim.

Inches

Max.

Min.

Max.

Min.

.190

.100

4.82

2.54

2.00

5.13

2.89

2.10

.202

.114

.083

.079

1.12

2.39

2.90

1.42

2.69

3.09

.044

.094

.114

.056

.106

.122

0.53

25.91

19.81

0.83

26.16

19.96

.021

1.020

.780

.033

1.030

.786

5.46BSC

.215BSC

0.00

0.25

.000

.010

20.32

2.29

20.83

2.59

.800

.090

.820

.102

3.17

3.66

.125

.144

6.07

8.38

6.27

8.69

.239

.330

.247

.342

3.81

1.78

4.32

2.29

.150

.070

.170

.090

6.04

1.57

6.30

1.83

.238

.062

.248

.072

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

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