IXFK73N30 [IXYS]

HiPerFET Power MOSFETs; HiPerFET功率MOSFET


型号：	IXFK73N30
厂家：	IXYS CORPORATION
描述：	HiPerFET Power MOSFETs HiPerFET功率MOSFET
文件：	总4页 (文件大小：133K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFET^TM

Power MOSFETs

DSS

D25

DS(on)

IXFK 73 N 30 300 V

IXFN 73 N 30 300 V

73 A

45 mΩ

t ≤ 200 ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

TO-264 AA (IXFK)

Symbol

TestConditions

Maximum Ratings

IXFK

IXFN

V_DSS

V_DGR

T_J= 25°C to 150°C

300

T_J= 25°C to 150°C; R_GS= 1 MΩ

(TAB)

V_GS

Continuous

Transient

V_GSM

miniBLOC, SOT-227 B (IXFN)

E153432

I_D25

I_DM

I_AR

T_C= 25°C

292

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

E_AR

T_C= 25°C

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 W

V/ns

P_D

T_C= 25°C

500

520

G = Gate

S = Source

D=Drain

TAB = Drain

T_J

-55 ... +150

150

-55 ... +150

300

°C

Either Source terminal at miniBLOC can be used

asMainorKelvinSource

T_JM

T_stg

Features

Internationalstandardpackages

T_L

1.6 mm (0.063 in) from case for 10 s

50/60 Hz, RMS t = 1 min

°C

JEDEC TO-264 AA, epoxy meet

UL94V-0,flammabilityclassification

V_ISOL

2500

3000

I_ISOL≤ 1 mA

t = 1 s

miniBLOCwithAluminiumnitride

isolation

Low R_{DS (on)}HDMOS^TMprocess

Ruggedpolysilicongatecellstructure

M_d

Mountingtorque

Terminalconnectiontorque

0.9/6

1.5/13 Nm/lb.in.

Weight

UnclampedInductiveSwitching(UIS)

rated

Lowpackageinductance

FastintrinsicRectifier

Applications

DC-DC converters

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Synchronousrectification

Batterychargers

Switched-modeandresonant-mode

power supplies

DC choppers

Temperatureandlightingcontrols

Low voltage relays

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 8 mA

300

V_GS(th)

I_GSS

I_DSS

V_GS= 20 V_DC, V_DS= 0

200 nA

400 uA

V_DS= 0.8 V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

Easy to mount

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

45 mΩ

92805J (11/01)

IXFK 73N30

IXFN 73N30

TO-264 AA Outline

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DS= 10 V; I_D= 0.5 I_D25, pulse test

C_iss

C_oss

C_rss

9000

1500

580

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

R_G= 1 Ω (External),

100

4.82

2.54

2.00

5.13

2.89

2.10

.190

.100

.079

.202

.114

.083

1.12

2.39

2.90

1.42

2.69

3.09

.044

.094

.114

.056

.106

.122

Q_g(on)

Q_gs

360

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

0.53

0.83

.021

1.020

.780

.033

1.030

.786

25.91 26.16

Q_gd

180

19.81 19.96

5.46 BSC

.215 BSC

0.00

0.25

.000

.010

R_thJC

R_thCK

TO-264 AA

0.25 K/W

K/W

0.15

0.05

20.32 20.83

.800

.090

.820

.102

2.29

3.17

2.59

3.66

.125

.144

R_thJC

R_thCK

miniBLOC, SOT-227 B

0.24 K/W

K/W

6.07

8.38

6.27

8.69

.239

.330

.247

.342

3.81

1.78

4.32

2.29

.150

.070

.170

.090

S6.04

6.30

1.57

.238

1.83

.248

.062

.072

Source-DrainDiode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

miniBLOC, SOT-227 B

Symbol

I_S

TestConditions

V_GS= 0 V

292

1.5

I_SM

Repetitive; pulse width limited by T_JM

V_SD

I_F= 100 A, V_GS= 0 V,

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t_rr

Q_RM

I_RM

200 ns

µC

I_F= I_S, -di/dt = 100 A/µs, V_R= 100 V

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

31.50

7.80

31.88

8.20

1.240

0.307

1.255

0.323

4.09

4.29

0.161

0.169

4.09

4.29

0.161

0.587

0.169

0.595

14.91

15.11

30.12

38.00

30.30

38.23

1.186

1.496

1.193

1.505

11.68

8.92

12.22

9.60

0.460

0.351

0.481

0.378

0.76

0.84

0.030

0.496

0.033

0.506

12.60

12.85

25.15

1.98

25.42

2.13

0.990

0.078

1.001

0.084

4.95

5.97

0.195

1.045

0.235

1.059

26.54

26.90

3.94

4.42

0.155

0.174

S4.72

4.85

0.186

0.191

24.59

-0.05

25.07

0.1

0.968

0.987

0.004

-0.002

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

IXFK 73N30

IXFN 73N30

Fig. 1 Output Characteristics

Fig. 2 Input Admittance

160

140

120

100

160

140

120

100

V_GS= 10V

T_J= 25°C

V_DS- Volts

V_GS- Volts

Fig. 3 R_DS(on)vs. Drain Current

Fig. 4 Temperature Dependence

of Drain to Source Resistance

2.0

1.8

1.6

1.4

1.2

1.0

0.8

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

T_J= 25°C

V_GS= 10V

I_D= 40A

_GS= 15V

120

160

200

240

-50 -25

25 50 75 100 125 150

T_J- Degrees C

I_D- Amperes

Fig. 5 Drain Current vs.

Case Temperature

Fig. 6 Temperature Dependence of

Breakdown and Threshold Voltage

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

BV_DSS

V_GS(th)

-50 -25

25 50 75 100 125 150

T_C- Degrees C

-50 -25

25 50 75 100 125 150

T_J- Degrees C

IXFK 73N30

IXFN 73N30

Fig.7 Gate Charge Characteristic Curve

Fig.8 Capacitance Curves

10000

9000

8000

7000

6000

5000

4000

3000

2000

1000

C_iss

V_DS= 150V

I_D= 42A

I_G= 10mA

f = 1MHz

_DS= 25V

C_oss

C_rss

50 100 150 200 250 300 350 400

Gate Charge - nCoulombs

V_DS- Volts

Fig.9 Source Current vs. Source

to Drain Voltage

160

140

120

100

T_J= 125°C

T_J= 25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V_SD- Volts

Fig.10 Transient Thermal Impedance

0.1

0.01

0.001

0.01

0.1

Time - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

IXFK73N30 [IXYS]

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