IXFN23N100 [IXYS]
HiPerFET-TM Power MOSFET; HiPerFET -TM功率MOSFET
| 型号： | IXFN23N100 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET-TM Power MOSFET |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFET
VDSS
ID25
RDS(on)
IXFN 24N100 1000 V 24 A
IXFN 23N100 1000 V 23 A
0.39 Ω
0.43 Ω
t ≤ 250 ns
êê
Single MOSFET Die
Preliminary data sheet
miniBLOC,SOT-227B(IXFN)
E153432
Symbol TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
S
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
24N100
23N100
24N100
23N100
24
23
96
92
24
A
A
A
A
A
TC = 25°C; Note 1
TC = 25°C
G = Gate
S = Source
D = Drain
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
báíÜÉê=pçìêÅÉ=íÉêãáå~ä=~í=ãáåá_il`=Å~å=ÄÉ=ìëÉÇ
~ë=j~áå=çê=hÉäîáå=pçìêÅÉ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
Features
PD
TC = 25°C
600
W
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
VISOL
50/60 Hz, RMS
ISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
I
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min.
1000
3.0
Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VGS = 0V
V
V
5.0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 µA
Advantages
2
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10V, ID = 0.5 • ID25
Note 2
23N100
24N100
0.43
0.39
Ω
Ω
«=OMMM=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ
VURVTa= ENMLMMF
IXFN 23N100
IXFN 24N100
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
miniBLOC, SOT-227 B
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10 V; ID = 0.5 • ID25, Note 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
15
22
S
Ciss
Coss
Crss
7000
750
pF
pF
pF
260
td(on)
tr
td(off)
tf
35
35
75
21
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
M4 screws (4x) supplied
RG = 1 Ω (External),
aáãK
jáääáãÉíÉê
fåÅÜÉë
jáåK
j~ñK
jáåK
j~ñK
^
_
PNKRM
TKUM
PNKUU
UKOM
NKOQM
MKPMT
NKORR
MKPOP
Qg(on)
Qgs
250
55
nC
nC
nC
`
a
QKMV
QKMV
QKOV
QKOV
MKNSN
MKNSN
MKNSV
MKNSV
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
b
c
QKMV
QKOV
MKNSN
MKRUT
MKNSV
MKRVR
Qgd
135
NQKVN
NRKNN
dPMKNO
PMKPM
NKNUS
NKNVP
RthJC
RthCK
0.21
K/W
K/W
e
PUKMM
PUKOP
NKQVS
NKRMR
g
NNKSU
UKVO
NOKOO
VKSM
MKQSM
MKPRN
MKQUN
MKPTU
0.05
h
i
MKTS
MKUQ
MKMPM
MKQVS
MKMPP
MKRMS
j
NOKSM
NOKUR
k
l
ORKNR
NKVU
ORKQO
OKNP
MKVVM
MKMTU
NKMMN
MKMUQ
m
QKVR
RKVT
MKNVR
NKMQR
MKOPR
NKMRV
n
OSKRQ
OSKVM
o
p
PKVQ
QKTO
QKQO
QKUR
MKNRR
MKNUS
MKNTQ
MKNVN
Source-DrainDiode
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
q
OQKRV
JMKMR
ORKMT
MKN
MKVSU
MKVUT
MKMMQ
r
JMKMMO
Symbol
TestConditions
IS
VGS = 0
=24N100
23N100
24
23
A
A
ISM
Repetitive;
pulse width limited by TJM
24N100
OPkNMM
96
92
A
A
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
IRM
250
n s
µC
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V
1.0
8
kçíÉëW=NK=mìäëÉ=ïáÇíÜ=äáãáíÉÇ=Äó=q
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %K
gjK
IXYS reserves the right to change limits, test conditions, and dimensions.
fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW QIUPRIRVO QIUUNINMS
QIURMIMTO QIVPNIUQQ
RIMNTIRMU
RIMPQITVS
RIMQVIVSN RINUTINNT RIQUSITNR
RIMSPIPMT RIOPTIQUN RIPUNIMOR
IXFN 23N100
IXFN 24N100
50
40
30
20
10
0
20
15
10
5
T
= 25°C
V
= 10V
J
GS
T
= 25°C
V
= 8-10V
GS
7V
7V
J
9V
8V
6V
6V
5V
5V
0
0
5
10
15
20
25
0
2
4
6
8
10
VCE - Volts
VDS - Volts
Figure 1. Output Characteristics at 25OC
Figure 2. Extended Output Characteristics at 125OC
20
20
16
12
8
V
= 10V
7V
GS
T
= 125°C
J
9V
8V
6V
15
TJ = 125OC
10
TJ = 25OC
5
4
5V
0
0
3
4
5
6
7
8
0
4
8
12
VDS - Volts
16
20
VGS - Volts
Figure4. AdmittanceCurves
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 10V
GS
I
= 24A
D
I
= 12A
D
25
50
75
100
125
150
TJ - Degrees C
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. TJ
«=OMMM=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ
IXFN 23N100
IXFN 24N100
20000
10000
15
12
9
Ciss
V
= 500 V
= 12 A
DS
I
D
I
= 10 mA
G
f = 1MHz
Coss
Crss
1000
100
6
3
0
0
5
10 15 20 25 30 35 40
0
50 100 150 200 250 300 350
VDS - Volts
Gate Charge - nC
Figure7.CapacitanceCurves
Figure6. GateCharge
50
40
30
20
10
0
30
25
20
15
10
5
o
T = 125 C
J
o
T = 25 C
J
0
0.0
0.5
1.0
VSD - Volts
Figure 8. Forward Voltage Drop of the Intrinsic Diode
1.5
2.0
2.5
-50 -25
0
25
Case Temperature - oC
Figure9.DrainCurrentvs.CaseTemperature
50
75 100 125 150
0.300
0.100
0.010
0.001
10-4
10-3
10-2
10-1
100
101
Figure10.TransientThermalResistance
IXYS reserves the right to change limits, test conditions, and dimensions.
fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW QIUPRIRVO QIUUNINMS
QIURMIMTO QIVPNIUQQ
RIMNTIRMU
RIMPQITVS
RIMQVIVSN RINUTINNT RIQUSITNR
RIMSPIPMT RIOPTIQUN RIPUNIMOR
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