IXFN44N60 [IXYS]
HiPerFET Power MOSFETs Single Die MOSFET; HiPerFET功率MOSFET的单芯片MOSFET
| 型号： | IXFN44N60 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Single Die MOSFET |
| 文件： | 总4页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFN 44N60
VDSS = 600 V
ID25 44 A
RDS(on) = 130 mW
=
D
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
G
S
S
Symbol
TestConditions
MaximumRatings
miniBLOC, SOT-227 B
E153432
VDSS
VDGR
TJ = 25°C to 150°C
600
600
V
V
S
TJ = 25°C to 150°C; RGS = 1 MW
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
ID25
TC = 25°C
44
A
D
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
176
44
A
A
G = Gate
S = Source
D = Drain
TAB = Drain
EAR
TC = 25°C
TC = 25°C
60
3
mJ
J
EAS
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
,
5
V/ns
TJ £ 150°C, RG = 2 W
Features
PD
TC = 25°C
600
W
• Internationalstandardpackage
• miniBLOC, withAluminiumnitride
isolation
• Low RDS (on) HDMOSTM process
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJ
1.6 mm (0.63 in) from case for 10 s
-
°C
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
• Low package inductance
• Fast intrinsic Rectifier
Md
Mountingtorque
Terminalconnectiontorque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• DC choppers
• Temperatureandlightingcontrols
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
600
2.5
V
V
VGH(th)
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
100 mA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
130 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98610B(7/00)
1 - 4
IXFN 44N60
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
miniBLOC, SOT-227 B
min.
typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
45
S
Ciss
Coss
Crss
8900
1000
330
pF
pF
pF
td(on)
tr
td(off)
tf
42
55
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
M4 screws (4x) supplied
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
RG = 1 W (External),
110
45
Max.
A
B
7.80
8.20 0.307 0.323
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
Qg(on)
Qgs
330
60
nC
nC
nC
E
F
4.09
4.29 0.161 0.169
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
14.91 15.11 0.587 0.595
Qgd
65
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
J
K
11.68 12.22 0.460 0.481
RthJC
RthCK
0.21 K/W
K/W
8.92
9.60 0.351 0.378
L
M
0.76
0.84 0.030 0.033
0.05
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
N
O
1.98
2.13 0.078 0.084
P
4.95
5.97 0.195 0.235
Q
26.54 26.90 1.045 1.059
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
44
176
1.3
A
A
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
IF = 50A, -di/dt = 100 A/ms, VR = 100 V
250 ns
QRM
IRM
1.4
8
mC
A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFN 44N60
Figure 1. Output Characteristics at 25OC
Figure 2. Output Characteristics at 125OC
80
60
40
20
0
100
TJ = 125OC
VGS = 10V
TJ = 25OC
6V
5V
V
GS = 10V
9V
8V
7V
80
60
40
20
0
9V
8V
7V
6V
5V
0
4
8
12
16
20
24
0
4
8
12
16
20
24
VDS - Volts
VDS - Volts
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
2.4
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
2.4
VGS = 10V
VGS = 10V
TJ = 125OC
2.0
2.0
1.6
1.2
0.8
ID = 44A
1.6
ID = 22A
TJ = 25OC
1.2
0.8
0
20
40
60
80
100
25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Figure 6. Admittance Curves
Figure 5. Drain Current vs. Case Temperature
60
60
50
40
30
20
10
0
50
40
30
20
10
0
TJ = 125oC
TJ = 25oC
-50 -25
0
25 50 75 100 125 150
3.0
3.5
4.0
4.5
5.0
5.5
TC - Degrees C
VGS - Volts
© 2000 IXYS All rights reserved
3 - 4
IXFN 44N60
Figure 7. Gate Charge
Figure 8. Capacitance Curves
12
10000
Ciss
V
DS = 300V
ID = 30A
IG = 10mA
f = 1MHz
10
8
Coss
6
1000
100
4
Crss
2
0
0
50 100 150 200 250 300 350 400
0
5
10 15 20 25 30 35 40
Gate Charge - nC
VDS - Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
100
80
TJ = 125OC
60
TJ = 25OC
40
20
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Volts
Figure 10. Transient Thermal Resistance
1.00
0.10
0.01
0.00
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4 - 4
相关型号：
IXFN44N80P
Power Field-Effect Transistor, 39A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
LITTELFUSE
IXFN48N50QD2
Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
IXYS
©2020 ICPDF网 联系我们和版权申明