IXFP4N60P3 [IXYS]

Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3;


型号：	IXFP4N60P3
厂家：	IXYS CORPORATION
描述：	Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 局域网开关脉冲晶体管
文件：	总5页 (文件大小：160K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Technical Information

Polar3 ^TMHiPerFET^TM

Power MOSFETs

V_DSS= 600V

I_D25= 4A

R_DS(on) 2.2

IXFY4N60P3

IXFA4N60P3

IXFP4N60P3

N-Channel Enhancement Mode

Avalanche Rated

TO-252 (IXFY)

Fast Intrinsic Rectifier

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-263 (IXFA)

T_J= 25C to 150C

600

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

D (Tab)

I_D25

I_DM

T_C= 25C

TO-220 (IXFP)

T_C= 25C, Pulse Width Limited by T_JM

I_A

T_C= 25C

E_AS

200

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

D (Tab)

114

G = Gate

S = Source

= Drain

T_J

-55 ... +150

150

C

Tab = Drain

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features



M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

International Standard Packages

Fast Intrinsic Rectifier

Avalanche Rated

Low R_DS(ON)and Q_G

Low Package Inductance



Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

Advantages



High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

600

Applications

3.0

5.0



Switch-Mode and Resonant-Mode

100 nA

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives



I_DSS

10 A

100 μA



T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

2.2



Robotics and Servo Controls

DS100427A(11/13)

IXFY4N60P3 IXFA4N60P3

IXFP4N60P3

Symbol

Test Conditions

Characteristic Values

TO-252 Outline

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

g_fs

V_DS= 20V, I_D= 0.5 • I_D25, Note 1

Gate Input Resistance

2.2

3.7

R_Gi

6.0



C_iss

C_oss

C_rss

365

V_GS= 0V, V_DS= 25V, f = 1MHz

1. Gate

2. Drain

3. Source

4. Drain

Bottom Side

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 30 (External)

Dim. Millimeter

Min. Max.

Inches

Min. Max.

Q_g(on)

Q_gs

6.9

1.7

2.8

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

2.19 2.38 0.086 0.094

0.89 1.14 0.035 0.045

Q_gd

0.13

0.005

0.64 0.89 0.025 0.035

R_thJC

R_thCS

1.10 C/W

C/W

0.76 1.14 0.030 0.045

5.21 5.46 0.205 0.215

TO-220

0.50

0.46 0.58 0.018 0.023

5.97 6.22 0.235 0.245

4.32 5.21 0.170 0.205

Source-Drain Diode

6.35 6.73 0.250 0.265

4.32 5.21 0.170 0.205

Symbol

Test Conditions

Characteristic Values

2.28 BSC

4.57 BSC

0.090 BSC

0.180 BSC

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

9.40 10.42 0.370 0.410

0.51 1.02 0.020 0.040

I_S

V_GS= 0V, Note1

0.64 1.02 0.025 0.040

0.89 1.27 0.035 0.050

2.54 2.92 0.100 0.115

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

1.4

t_rr

Q_RM

I_RM

250

C

TO-220 Outline

I_F= 4A, -di/dt = 25A/μs

0.35

2.15

V_R= 100V

Note 1. Pulse test, t  300s, duty cycle, d 2%.

TO-263 Outline

Pins: 1 - Gate

3 - Source

2 - Drain

1 = Gate

2 = Drain

3 = Source

4 = Drain

Bottom Side

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2 6,759,692

6,710,463

6,727,585

7,005,734B2 7,157,338B2

7,063,975B2

6,771,478B2 7,071,537

IXFY4N60P3 IXFA4N60P3

IXFP4N60P3

Fig. 2. Extended Output Characteristics @ T_J= 25ºC

Fig. 1. Output Characteristics @ T_J= 25ºC

3.5

= 10V

2.5

1.5

0.5

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 2A Value vs.

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 125ºC

3.5

3.4

3.0

2.6

2.2

1.8

1.4

1.0

0.6

0.2

= 10V

= 4A

2.5

= 2A

1.5

0.5

-50

-25

100

125

150

V_DS- Volts

T_J- Degrees Centigrade

Fig. 5. R_DS(on)Normalized to I_D= 2A Value vs.

Drain Current

Fig. 6. Maximum Drain Current vs.

Case Temperature

3.4

3.0

2.6

2.2

1.8

1.4

1.0

0.6

= 10V

T = 125ºC

T = 25ºC

-50

-25

100

125

150

I_D- Amperes

T_C- Degrees Centigrade

IXFY4N60P3 IXFA4N60P3

IXFP4N60P3

Fig. 7. Input Admittance

Fig. 8. Transconductance

4.5

= - 40ºC

3.5

25ºC

2.5

125ºC

= 125ºC

25ºC

- 40ºC

1.5

0.5

1.5

2.5

3.5

4.5

5.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

V_GS- Volts

I_D- Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode

Fig. 10. Gate Charge

= 300V

= 2A

= 10mA

= 125ºC

= 25ºC

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

V_SD- Volts

Q_G- NanoCoulombs

Fig. 11. Capacitance

Fig. 12. Forward-Bias Safe Operating Area

1,000

100

DS(on)

Limit

25µs

iss

100µs

oss

= 150ºC

= 25ºC

Single Pulse

= 1 MHz

rss

1ms

0.1

100

1,000

V_DS- Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFY4N60P3 IXFA4N60P3

IXFP4N60P3

Fig. 13. Maximum Transient Thermal Impedance

aaaaaa

0.1

0.01

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS REF: F_4N60P3(K2)12-07-11

相关型号：