IXFP72N30X3M [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFP72N30X3M |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
X3-Class HiPerFETTM
Power MOSFET
VDSS = 300V
ID25 = 72A
RDS(on) 19m
IXFP72N30X3M
(Electrically Isolated Tab)
N-Channel Enhancement Mode
OVERMOLDED
TO-220
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
300
300
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
G
D
S
VGSS
VGSM
Continuous
Transient
20
30
V
V
G = Gate
S = Source
D = Drain
ID25
IDM
TC = 25C, Limited by TJM
TC = 25C, Pulse Width Limited by TJM
72
A
A
150
IA
TC = 25C
TC = 25C
36
1
A
J
EAS
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
36
V/ns
W
Features
International Standard Package
Plastic Overmolded Tab
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Advantages
Md
Mounting Torque
1.13 / 10
2.5
Nm/lb.in
g
Weight
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
Characteristic Values
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 1.5mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
300
V
V
2.5
4.5
100 nA
IDSS
5 A
TJ = 125C
750 A
RDS(on)
VGS = 10V, ID = 36A, Note 1
15
19 m
DS100854A(7/17)
© 2017 IXYS CORPORATION, All Rights Reserved
IXFP72N30X3M
Symbol
Test Conditions
Characteristic Values
OVERMOLDED TO-220
(IXFP...M)
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 36A, Note 1
Gate Input Resistance
36
60
S
RGi
1.7
Ciss
Coss
Crss
5400
800
2
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
1
2
3
Effective Output Capacitance
Co(er)
Co(tr)
310
pF
pF
Energy related
Time related
VGS = 0V
DS = 0.8 • VDSS
V
1200
td(on)
tr
td(off)
tf
22
25
86
11
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 36A
V
RG = 5 (External)
Qg(on)
Qgs
82
25
25
nC
nC
nC
Terminals: 1 - Gate
2 - Drain
VGS = 10V, VDS = 0.5 • VDSS, ID = 36A
3 - Source
Qgd
RthJC
RthCS
3.5 C/W
C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
72
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
288
1.4
V
trr
QRM
IRM
100
750
15
ns
IF = 36A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFP72N30X3M
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
80
70
60
50
40
30
20
10
0
300
250
200
150
100
50
V
= 10V
GS
V
= 10V
9V
GS
9V
8V
7V
6V
8V
7V
6V
5V
5V
0
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 36A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
80
70
60
50
40
30
20
10
0
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
8V
GS
V
= 10V
GS
7V
6V
I
= 72A
D
I
= 36A
D
5V
4V
-50
-25
0
25
50
75
100
125
150
0.5
1
1.5
2
2.5
3
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 36A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V
= 10V
GS
BV
DSS
T
= 125oC
J
T
J
= 25oC
V
GS(th)
50
100
150
200
250
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ - Degrees Centigrade
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
IXFP72N30X3M
Fig. 7. Input Admittance
Fig. 8. Transconductance
120
100
80
60
40
20
0
140
120
100
80
T
J
= - 40oC
V
= 10V
DS
V
= 10V
DS
25oC
125oC
60
T
J
= 125oC
25oC
40
- 40oC
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
0
0
20
40
60
80
100
120
140
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
8
250
200
150
100
50
V
= 150V
DS
I
I
= 36A
D
G
= 10mA
6
4
T
J
= 125oC
2
T
J
= 25oC
0
0
10
20
30
40
50
60
70
80
90
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Output Capacitance Stored Energy
14
12
10
8
100,000
10,000
1,000
100
C
iss
C
C
oss
rss
6
4
10
2
= 1 MHz
f
1
0
1
10
100
1000
50
100
150
200
250
300
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP72N30X3M
Fig. 14. Maximum Transient Thermal Impedance
Fig. 13. Forward-Bias Safe Operating Area
10
1
1000
100
10
R
DS(
on
Limit
)
25μs
0.1
100μs
0.01
0.001
1
T
= 150oC
= 25oC
J
T
C
1ms
Single Pulse
10ms
100ms
DC
100
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1
10
1,000
Pulse Width - Seconds
VDS - Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_72N30X3(25-S301) 7-18-17
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