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IXFQ50N60X [IXYS]

Power Field-Effect Transistor,;
IXFQ50N60X
型号： IXFQ50N60X
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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Preliminary Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 50A  
RDS(on) 73m  
IXFT50N60X  
IXFQ50N60X  
IXFH50N60X  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXFT)  
Fast Intrinsic Diode  
G
S
D (Tab)  
TO-3P (IXFQ)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
TJ = 25C to 150C  
600  
600  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
S
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 (IXFH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
50  
A
A
120  
IA  
TC = 25C  
TC = 25C  
20  
2
A
J
G
D
EAS  
S
D (Tab)  
D = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
660  
G = Gate  
S = Source  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Md  
Mounting Torque (TO-247 & TO-3P)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268  
TO-3P  
TO-247  
4.0  
5.5  
6.0  
g
g
g
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
2.5  
4.5  
Applications  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
25 A  
1 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
73 m  
DS100657A(5/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFT50N60X IXFQ50N60X  
IXFH50N60X  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
17  
28  
S
RGi  
1.1  
Ciss  
Coss  
Crss  
4660  
3300  
30  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
230  
750  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
28  
62  
60  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 2(External)  
Qg(on)  
Qgs  
116  
28  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
54  
RthJC  
RthCS  
0.19 C/W  
C/W  
TO-247 & TO-3P  
0.25  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
50  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
200  
1.4  
V
trr  
QRM  
IRM  
195  
1.6  
16  
ns  
IF = 25A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFT50N60X IXFQ50N60X  
IXFH50N60X  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
50  
40  
30  
20  
10  
0
V
= 10V  
V
= 10V  
GS  
GS  
120  
100  
80  
60  
40  
20  
0
9V  
8V  
9V  
7V  
8V  
7V  
6V  
6V  
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 25A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
I
= 50A  
D
7V  
I
= 25A  
D
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 25A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T = 125ºC  
J
T = 25ºC  
J
V
GS(th)  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
TJ - Degrees Centigrade  
ID - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFT50N60X IXFQ50N60X  
IXFH50N60X  
Fig. 7. Maximum Drain Current vs.  
Case Temperature  
Fig. 8. Input Admittance  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
T
J
= 125ºC  
25ºC  
- 40ºC  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
60  
T
J
= 125ºC  
40  
T
J
= 25ºC  
20  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
= 1 MHz  
f
V
= 300V  
DS  
I
I
= 25A  
D
G
C
iss  
= 10mA  
C
oss  
10  
C
rss  
1
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT50N60X IXFQ50N60X  
IXFH50N60X  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
35  
30  
25  
20  
15  
10  
5
1000  
100  
10  
R
Limit  
)
DS(  
on  
25µs  
100µs  
1
1ms  
10ms  
T
= 150ºC  
= 25ºC  
J
0.1  
0.01  
DC  
T
C
Single Pulse  
0
0
100  
200  
300  
400  
500  
600  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_50N60X(I8-R4T45) 5-22-15A  
IXFT50N60X IXFQ50N60X  
IXFH50N60X  
TO-3P Outline  
TO-268 Outline  
TO-247 Outline  
D
A
A
A2  
0P  
+
B
O 0K M D B M  
A
0P  
0P1  
E
E1  
+
E
+
A2  
A2  
Q
S
S
D2  
+
4
R
+
+
D1  
D1  
D
D
0P1  
4
1
2
3
ixys option  
C
1
2
3
L1  
L1  
A1  
E1  
L
A1  
b
b2  
c
c
b
b4  
Terminals: 1 - Gate  
3 - Source  
2,4 - Drain  
b2  
PINS: 1 - Gate  
e
b4  
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
e
PINS: 1 - Gate  
2, 4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  

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