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IXFQ72N30X3 [IXYS]

Power Field-Effect Transistor,;
IXFQ72N30X3
型号： IXFQ72N30X3
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 72A  
RDS(on) 19m  
IXFA72N30X3  
IXFP72N30X3  
IXFQ72N30X3  
IXFH72N30X3  
TO-263 AA (IXFA)  
N-Channel Enhancement Mode  
G
S
D (Tab)  
TO-220AB (IXFP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 150C  
300  
300  
V
V
D
D (Tab)  
S
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-3P (IXFQ)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
72  
A
A
150  
D (Tab)  
IA  
TC = 25C  
TC = 25C  
36  
1
A
J
TO-247 (IXFH)  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
390  
G
D
S
TJ  
-55 ... +150  
150  
C  
C  
C  
D (Tab)  
TJM  
Tstg  
G = Gate  
S = Source  
D
= Drain  
-55 ... +150  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220,TO-247 & TO-3P)  
10..65 / 2.2..14.6  
N/lb  
Nm/lb.in  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Fast Intrinsic Diode  
Low Package Inductance  
1.13 / 10  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
TO-247  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1.5mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
300  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
A  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
5
TJ = 125C  
750 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
15  
19 m  
Robotics and Servo Controls  
DS100853A(7/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFA72N30X3 IXFP72N30X3  
IXFQ72N30X3 IXFH72N30X3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
36  
60  
S
RGi  
1.7  
Ciss  
Coss  
Crss  
5400  
800  
2
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
310  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
1200  
td(on)  
tr  
td(off)  
tf  
22  
25  
86  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 5(External)  
Qg(on)  
Qgs  
82  
25  
25  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.32 C/W  
TO-220  
TO-247 & TO-3P  
0.50  
0.25  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
72  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
288  
1.4  
V
trr  
QRM  
IRM  
100  
750  
15  
ns  
IF = 36A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA72N30X3 IXFP72N30X3  
IXFQ72N30X3 IXFH72N30X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
9V  
GS  
9V  
8V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 36A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 72A  
D
I
= 36A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 36A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
BV  
DSS  
T
= 125oC  
J
T
J
= 25oC  
V
GS(th)  
50  
100  
150  
200  
250  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFA72N30X3 IXFP72N30X3  
IXFQ72N30X3 IXFH72N30X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
60  
40  
20  
0
V
= 10V  
DS  
T
J
= 125oC  
25oC  
- 40oC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
0.4  
1
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
250  
200  
150  
100  
50  
140  
120  
100  
80  
T
= - 40oC  
J
V
= 10V  
DS  
25oC  
125oC  
60  
= 125oC  
40  
T
J
T
= 25oC  
20  
J
0
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
ID - Amperes  
VSD - Volts  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100,000  
10,000  
1,000  
100  
V
= 150V  
DS  
I
I
= 36A  
D
G
= 10mA  
C
iss  
6
C
C
oss  
4
rss  
2
10  
= 1 MHz  
f
0
1
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA72N30X3 IXFP72N30X3  
IXFQ72N30X3 IXFH72N30X3  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
1000  
100  
10  
14  
12  
10  
8
R
DS(  
on  
Limit  
)
25μs  
100μs  
6
1
1ms  
4
T = 150oC  
J
10ms  
0.1  
0.01  
= 25oC  
DC  
T
C
2
Single Pulse  
0
0
50  
100  
150  
200  
250  
300  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_72N30X3(25-S301) 7-18-17  
IXFA72N30X3 IXFP72N30X3  
IXFQ72N30X3 IXFH72N30X3  
TO-263 Outline  
TO-220 Outline  
1 = Gate  
2 = Drain  
3 = Source  
4 = Drain  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
TO-247 Outline  
TO-3P Outline  
D
A
A2  
A
B
E
Q
S
D2  
P1  
R
D1  
D
4
1
2
3
L1  
E1  
L
A1  
b
C
b2  
1 - Gate  
2,4 - Drain  
3 - Source  
b4  
e
Pins: 1 - Gate  
2 - Drain  
3 - Source 4 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  

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