IXFR100N25 [IXYS]

HiPerFET Power MOSFETs ISOPLUS247; HiPerFET功率MOSFET ISOPLUS247


型号：	IXFR100N25
厂家：	IXYS CORPORATION
描述：	HiPerFET Power MOSFETs ISOPLUS247 HiPerFET功率MOSFET ISOPLUS247
文件：	总2页 (文件大小：83K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Advance Technical Information

HiPerFET^TMPowerMOSFETs

ISOPLUS247^TM

IXFR 100N25

V_DSS

= 250

= 87

I_D25

R_DS(on)

= 27 mΩ

(Electrically Isolated Backside)

t ≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

ISOPLUS247^TM

E153432

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

250

V_GS

V_GSM

Continuous

Transient

±20

±30

Isolated backside*

D = Drain

I_D25

I_L(RMS)

I_DM

T_C= 25°C (MOSFET chip capability)

T_C=Externalleadcurrentlimit

T_C= 25°C, Note 1

400

100

G = Gate

S = Source

I_AR

T_C= 25°C

* Patent pending

E_AR

E_AS

T_C= 25°C

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Features

P_D

T_C= 25°C

400

^lSilicon chip on Direct-Copper-Bond

substrate

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

^lLow drain to tab capacitance(<30pF)

^lLow R_{DS (on)}HDMOS^TMprocess

^lRugged polysilicon gate cell structure

^lRated for Unclamped Inductive Load

T_L

1.6 mm (0.063 in.) from case for 10 s

300

2500

°C

V_ISOL

Weight

50/60

Hz,

RMSt

min

Switching (UIS)

^lFast intrinsic Rectifier

Applications

DC-DC converters

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Battery chargers

Switched-mode and resonant-mode

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20 V, V_DS= 0

250

2.0

4 V

power supplies

DC choppers

^lAC motor control

±200 nA

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J

25°C

100 µA

2 mA

Advantages

Easy assembly

T_J= 125°C

Space savings

R_DS(on)

V_GS= 10 V, I_D= I_T

Notes 2, 3

27 mΩ

High power density

98840 (5/01)

IXFR 100N25

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

ISOPLUS247OUTLINE

V_DS= 10 V; I_D= I_T

Notes 2, 3

C_iss

C_oss

C_rss

9100

1800

600

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= I_T

R_G= 1 Ω (External), Notes 2, 3

110

Q_g(on)

Q_gs

300

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= I_T

Notes 2, 3

Q_gd

160

0.3 K/W

K/W

R_thJC

R_thCK

0.15

Source-DrainDiode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Symbol

TestConditions

I_S

V_GS= 0 V

100

400

1.5

I_SM

V_SD

Repetitive; Note 1

I_F= I_T, V_GS= 0 V, Notes 2, 3

t_rr

250

µC

Q_RM

I_RM

1.4

I_F= 50A,-di/dt = 100 A/µs, V_R= 100 V

Note: 1. Pulse width limited by T_JM

2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

3. I_T= 50

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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