IXFR24N50Q [IXYS]
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface); HiPerFET功率MOSFET ISOPLUS247 （电隔离背面）
| 型号： | IXFR24N50Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface) |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM Power MOSFETs
ISOPLUS247TM
VDSS
ID25
RDS(on)
IXFR 26N50Q 500 V
IXFR 24N50Q 500 V
24 A
22 A
0.20 Ω
0.23 Ω
(Electrically Isolated Back Surface)
t ≤ 250 ns
rr
N-ChannelEnhancementMode
High dV/dt, Low trr, HDMOSTM Family
Symbol
TestConditions
Maximum Ratings
ISOPLUS247TM
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
Isolated back surface*
ID25
IDM
IAR
TC = 25°C
26N50Q
24N50Q
26N50Q
24N50Q
26N50Q
24N50Q
24
22
104
96
26
24
A
A
A
A
A
A
TC = 25°C, Pulse width limited by TJM
TC = 25°C
G = Gate
S = Source
D = Drain
* Patent pending
EAR
EAS
TC = 25°C
TC = 25°C
30
1.5
mJ
J
Features
Silicon chip on Direct-Copper-Bond
substrate
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
l
PD
TC = 25°C
250
W
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
l
l
l
l
Low drain to tab capacitance(<35pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.062 in.) from case for 10 s
300
2500
5
°C
V~
g
VISOL
Weight
50/60 Hz, RMS
t = 1 minute leads-to-tab
l
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Battery chargers
Symbol
VDSS
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
l
Switched-mode and resonant-mode
power supplies
DC choppers
min. typ. max.
l
VGS = 0 V, ID = 250uA
500
2.5
V
V
l
AC motor control
VGS(th)
IGSS
VDS = VGS, ID = 4mA
4.5
Advantages
l
Easyassembly:noscrews,orisolation
VGS = ±20 VDC, VDS = 0
±100 nA
foils required
Space savings
IDSS
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25
1
µA
mA
l
l
High power density
l
RDS(on)
VGS = 10 V, ID = IT
Notes 1 & 2
26N50Q
24N50Q
0.20
0.23
Ω
Ω
Low collector capacitance to ground
(lowEMI)
98664A (5/01)
© 2001 IXYS All rights reserved
IXFR 24N50Q
IXFR 26N50Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
VDS = 15 V; ID = IT
Note 1
14
24
S
Ciss
Coss
Crss
3900
500
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
130
td(on)
tr
td(off)
tf
28
30
55
16
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1 Ω (External),
Qg(on)
Qgs
95
27
40
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
RthJC
RthCK
0.50 K/W
K/W
0.15
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
26
A
A
ISM
Repetitive; pulse width limited by TJM
104
VSD
IF = IS, VGS = 0 V, Note 1
1.3
V
trr
TJ = 25°C
250
ns
QRM
TJ = 25°C
0.85
8
1.5 µC
IF = Is, -di/dt = 100 A/µs,
VR = 100 V
IRM
TJ = 25°C
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT test current:
IXFR26N50Q
IXFR24N50Q
IT = 13A
IT = 12A
3. See IXFH26N50Q data sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
相关型号：
©2020 ICPDF网 联系我们和版权申明