IXFR24N80P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFR24N80P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFR 24N80P
VDSS
ID25
=
=
800
13
V
A
RDS(on) ≤ 420 mΩ
trr
(Electrically Isolated Back Surface)
≤ 200
ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
ISOPLUS247 (IXFR)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
S
Isolated Tab
= Drain
ID25
IDM
TC = 25°C
13
55
A
A
TC = 25°C, pulse width limited by TJM
G = Gate
D
S = Source
IAR
TC = 25°C
12
A
EAR
EAS
TC = 25°C
TC = 25°C
50
mJ
J
1.5
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
10
V/ns
Features
z Silicon chip on Direct-Copper-Bond
substrate
TC = 25°C
208
W
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
°C
°C
V~
z International standard package
z Fast recovery diode
TL
TSOLD
VISOL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, 1 minute
300
260
2500
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
FC
Weight
Mounting force
20..120/4.6..27
5
N/lb
g
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
Easy to mount
Space savings
High power density
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 4 mA
VGS = 30 V, VDS = 0 V
800
V
V
z
z
3.0
5.0
100
25
nA
IDSS
VDS = VDSS
VGS = 0 V
μA
μA
TJ = 125°C
1000
RDS(on)
VGS = 10 V, ID = IT (note 1)
420 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99600E(07/06)
© 2006 IXYS All rights reserved
IXFR 24N80P
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
ISOPLUS247 (IXFR) Outline
VDS = 20 V; ID = IT, pulse test
15
25
S
Ciss
Coss
Crss
7200
470
26
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
32
27
75
24
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG =2 Ω (External)
Qg(on)
Qgs
105
30
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
33
RthJC
RthCS
0.6 °C/W
°C/W
0.15
Note 1: Test current IT = 12 A
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
IS
Test Conditions
VGS = 0 V
24
55
A
ISM
Repetitive
A
V
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr
IF = 25A, -di/dt = 100 A/μs
250
ns
QRM
IRM
VR = 100V, VGS = 0 V
0.8
6.0
μC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFR 24N80P
Fig. 2. Extended Output Characteristics
@ 25ºC
Fig. 1. Output Characteristics
@ 25ºC
24
22
20
18
16
14
12
10
8
55
50
45
40
35
30
25
20
15
10
5
VGS = 10V
VGS = 10V
7V
6V
6V
5V
6
4
5V
2
0
0
0
0
0
1
2
3
4
5
6
7
8
9
0
3
6
9
12
15
18
21
24
27
30
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 12A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
24
22
20
18
16
14
12
10
8
V
= 10V
6V
GS
V
= 10V
GS
5V
I
= 24A
D
I
= 12A
D
6
4
0.7
0.4
2
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
Fig. 5. RDS(on) Normalized to ID = 12A Value
vs. Drain Current
16
14
12
10
8
3
2.8
2.6
2.4
2.2
2
V
= 10V
GS
T = 125ºC
J
1.8
1.6
1.4
1.2
1
6
4
T = 25ºC
J
2
0
0.8
-50
-25
0
25
50
75
100
125
5
10
15
20
25
30
35
40
45
50
55
TJ - Degrees Centigrade
ID - Amperes
© 2006 IXYS All rights reserved
IXFR 24N80P
Fig. 8. Transconductance
Fig. 7. Input Admittance
40
36
32
28
24
20
16
12
8
65
60
55
50
45
40
35
30
25
20
15
10
5
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
25ºC
- 40ºC
4
0
0
3
3.5
4
4.5
5
5.5
6
0
5
10
15
20
25
30
35
40
45
50
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
36
32
28
24
20
16
12
8
10
9
8
7
6
5
4
3
2
1
0
V
= 400V
DS
I
I
= 12A
D
G
= 10mA
T
J
= 125ºC
T
J
= 25ºC
4
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
10
20
30
40
50
60
70
80
90 100 110
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
C
iss
C
oss
f = 1 MHz
5
C
rss
10
0.0001
0.001
0.01
0.1
1
10
0
10
15
20
25
30
35
40
Pulse W idth - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_24N80P (8J) 6-22-06.xls
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