IXFX44N55Q [IXYS]

HiPerFET Power MOSFETs Q-CLASS; HiPerFET功率MOSFET Q系列


型号：	IXFX44N55Q
厂家：	IXYS CORPORATION
描述：	HiPerFET Power MOSFETs Q-CLASS HiPerFET功率MOSFET Q系列
文件：	总2页 (文件大小：102K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Advance Technical Information

HiPerFET^TM

Power MOSFETs

Q-CLASS

IXFK 44N55Q

IXFX 44N55Q

= 550 V

44 A

= 120 mΩ

DSS

D25

DS(on)

t ≤ 250 ns

Single MOSFET Die

N-ChannelEnhancementMode

AvalancheRated, LowQg

PLUS247^TM(IXFX)

High dV/dt, Low t

Symbol

TestConditions

Maximum Ratings

(TAB)

V_DSS

V_DGR

= 25°C to 150°C

= 25°C to 150°C; R = 1 MΩ

550

TO-264AA(IXFK)

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

= 25°C

176

(TAB)

= 25°C, pulse width limited by T

= 25°C

G = Gate

S = Source

D = Drain

TAB = Drain

E_AR

E_AS

= 25°C

2.5

Features

dv/dt

≤ I , di/dt ≤ 100 A/µs, V ≤ V

V/ns

DSS

≤ 150°C, R = 2 Ω

IXYS advanced low Q_gprocess

Low gate charge and capacitances

- easier to drive

P_D

= 25°C

500

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

- faster switching

International standard packages

Low R_{DS (on)}

Rated for unclamped Inductive load

switching (UIS) rated

Molding epoxies meet UL 94 V-0

flammability classification

T_L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M_d

Mounting torque

TO-264

0.4/6

Nm/lb.in.

Weight

PLUS 247

TO-264

Applications

DC-DC converters

Symbol

V_DSS

TestConditions

Characteristic Values

(T = 25°C, unless otherwise specified)

Battery chargers

Switched-mode and resonant-mode

power supplies

min. typ. max.

V_GS= 0 V, I_D= 250uA

V_DS= V_GS, I_D= 4mA

550

2.5

DC choppers

AC motor control

V_GS(th)

I_GSS

4.5 V

Temperature and lighting controls

= ±20 V, V = 0

±100 nA

Advantages

PLUS 247 package for clip or spring

I_DSS

= V

= 0 V

100 µA

2 mA

DSS

= 125°C

mounting

R_DS(on)

Note 1

= 10 V, I = 0.5 I

120 mΩ

Space savings

High power density

D25

98918 (04/02)

IXFK 44N55Q

IXFX 44N55Q

Symbol

g_fs

TestConditions

Characteristic Values

(T = 25°C, unless otherwise specified)

PLUS247^TMOutline

min. typ. max.

= 10 V; I = 0.5 I

D25

Note 1

C_iss

C_oss

C_rss

6400

850

= 0 V, V = 25 V, f = 1 MHz

180

t_d(on)

t_r

t_d(off)

t_f

= 10 V, V = 0.5 V , I = 0.5 I

D25

DSS

R = 1 Ω (External),

Terminals: 1 - Gate

2 - Drain (Collector)

3-Source(Emitter)

4 - Drain (Collector)

Q_g(on)

Q_gs

190

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

= 10 V, V = 0.5 V , I = 0.5 I

DS DSS D D25

4.83

2.29

1.91

5.21

2.54

2.16

.190 .205

.090 .100

.075 .085

Q_gd

R_thJC

R_thCK

0.26 K/W

K/W

1.14

1.91

2.92

1.40

2.13

3.12

.045 .055

.075 .084

.115 .123

0.15

0.61

0.80

.024 .031

.819 .840

20.80 21.34

E15.75 16.13

.620 .635

5.45 BSC

19.81 20.32

.215 BSC

Source-DrainDiode

Characteristic Values

(T = 25°C, unless otherwise specified)

.780 .800

.150 .170

3.81

4.32

Symbol

TestConditions

= 0 V

min. typ. max.

5.59

4.32

6.20

4.83

.220 0.244

.170 .190

I_S

TO-264 AA Outline

I_SM

Repetitive;

pulse width limited by T

176

V_SD

I = I , V = 0 V, Note 1

1.5

t_rr

250 ns

I = 25A,-di/dt = 100 A/µs, V = 100 V

Q_RM

I_RM

1.0

µC

Millimeter

Dim.

Inches

Min.

Max.

Min.

Max.

Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

4.82

2.54

2.00

5.13

2.89

2.10

.190

.100

.079

.202

.114

.083

1.12

2.39

2.90

1.42

2.69

3.09

.044

.094

.114

.056

.106

.122

0.53

25.91

19.81

0.83

26.16

19.96

.021

1.020

.780

.033

1.030

.786

5.46BSC

.215BSC

0.00

0.25

.000

.010

20.32

2.29

20.83

2.59

.800

.090

.820

.102

3.17

3.66

.125

.144

6.07

8.38

6.27

8.69

.239

.330

.247

.342

3.81

1.78

4.32

2.29

.150

.070

.170

.090

6.04

1.57

6.30

1.83

.238

.062

.248

.072

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

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