IXFX50N50 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFX50N50 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
DSS
D25
DS(on)
V
I
R
IXFX 50N50
IXFX 55N50
500 V 50 A 100 mΩ
500 V 55 A 80 mΩ
t ≤ 250 ns
rr
Single Die MOSFET
Preliminary data sheet
PLUS247TM
(IXFX)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
D (TAB)
G
ID25
IDM
IAR
TC = 25°C
50N50
55N50
50N50
55N50
50N50
55N50
50
55
200
220
50
A
A
A
A
A
A
D
TC = 25°C, pulse width limited by TJM
TC = 25°C
55
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
Features
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
l
International standard package
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
l
l
l
PD
TJ
TC = 25°C
520
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
l
l
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
TL
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
300
°C
Md
1.13/10 Nm/lb.in.
Weight
6
g
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
Symbol
VDSS
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
l
DC choppers
min. typ. max.
l
AC motor control
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
500
2.5
V
V
l
Temperature and lighting controls
VGS(th)
IGSS
4.5
VGS = ±20 V, VDS = 0
±200 nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
l
PLUS 247TM package for clip or spring
mounting
2
mA
l
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
50N50
55N50
100 mΩ
80 mΩ
Space savings
l
High power density
98507D (04/02)
© 2002 IXYS All rights reserved
IXFX 50N50
IXFX 55N50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM Outline
VDS = 10 V; ID = 0.5 ID25
Note 1
45
S
Ciss
Coss
Crss
9400
1280
460
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
45
60
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2 Ω (External),
120
45
Terminals: 1 - Gate
2 - Drain (Collector)
3-Source(Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
330
55
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Dim.
A
Millimeter
Inches
Min.
Max.
Min. Max.
Qgd
155
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
A
1
RthJC
RthCK
0.22 K/W
K/W
A
2
0.15
b
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
b
1
b
2
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
20.80 21.34
15.75 16.13
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
e
5.45 BSC
.215 BSC
L
19.81 20.32
.780 .800
.150 .170
Symbol
IS
TestConditions
L1
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
VGS = 0 V
55N50
50N50
55
50
A
A
ISM
Repetitive;
pulse width limited by TJM
55N50
50N50
220
200
A
A
VSD
IF = IS, VGS = 0 V
Note 1
1.5
V
trr
250 ns
QRM
IRM
1.0
10
µC
IF =25 A,-di/dt = 100 A/µs, VR = 100 V
A
Note: 1.Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
IXFX 50N50
IXFX 55N50
Figure 2. Output Characteristics at 125OC
Figure 1. Output Characteristics at 25OC
100
80
60
40
20
0
140
120
100
80
VGS = 10V
TJ = 125OC
6V
VGS = 10V
TJ = 25OC
9V
8V
7V
9V
8V
7V
6V
5V
60
40
5V
20
0
0
4
8
12
VDS - Volts
16
20
24
0
4
8
12
16
20
24
VDS - Volts
Figure3. RDS(on) normalized to 0.5
ID25 value vs. ID
Figure4. RDS(on) normalized to 0.5
ID25 value vs. TJ
2.8
2.4
2.0
1.6
1.2
0.8
2.2
VGS = 10V
V
GS = 10V
2.0
1.8
1.6
1.4
1.2
1.0
TJ = 125OC
I
D = 55A
TJ = 25OC
ID = 27.5A
0
20
40
60
80
100
120
25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Figure5.DrainCurrentvs.CaseTemperature
Figure6. AdmittanceCurves
60
100
50
40
30
20
10
0
IXF_55N50
80
60
40
20
0
TJ = 125oC
IXF_50N50
TJ = 25oC
-50 -25
0
25 50 75 100 125 150
3.0
3.5
4.0
4.5
5.0
5.5
6.0
TC - Degrees C
VGS - Volts
© 2002 IXYS All rights reserved
IXFX 50N50
IXFX 55N50
Figure7. GateCharge
Figure8.CapacitanceCurves
10000
1000
100
12
10
8
Ciss
f = 1MHz
VDS = 250V
ID = 27.5A
Coss
6
4
Crss
2
0
0
50 100 150 200 250 300 350
0
5
10 15 20 25 30 35 40
Gate Charge - nC
VDS - Volts
Figure9. ForwardVoltageDropofthe
Intrinsic Diode
100
80
60
40
20
0
TJ = 125OC
TJ = 25OC
0.2
0.4
0.6
0.8
1.0
Figure10. Forward Bias Safe Operating Area
1.00
0.10
0.01
0.00
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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