IXFZ140N25T [IXYS]
GigaMOS HiperFET Power MOSFET; GigaMOS HiperFET功率MOSFET
| 型号： | IXFZ140N25T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GigaMOS HiperFET Power MOSFET |
| 文件： | 总5页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GigaMOSTM HiperFETTM
Power MOSFET
VDSS = 250V
ID25 = 100A
RDS(on) ≤ 17mΩ
IXFZ140N25T
trr
≤ 200ns
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
DE475
D
D
D
G
Symbol
VDSS
Test Conditions
Maximum Ratings
S
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
250
250
V
V
S
Isolated Tab
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
G = Gate
D = Drain
S = Source
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
100
400
A
A
IA
TC = 25°C
TC = 25°C
40
3
A
J
Features
EAS
PD
TC = 25°C
445
20
W
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
V/ns
z Isolated Substrate
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
- Excellent Thermal Transfer
- Increased Temperature and Power
Cycling Capability
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1 minute
t = 1 second
2500
3000
V~
V~
- High Isolation Voltage (2500V~)
z Very High Current Handling
Capability
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z Fast Intrinsic Diode
z Avalanche Rated
FC
Mounting Force
20..120 / 4.5..27
3
N/lb.
g
Advantages
Weight
z
Easy to Mount
Space Savings
High Power Density
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
250
2.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 4mA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z DC-DC Converters
z Battery Chargers
5.0
z Switch-Mode and Resonant-Mode
Power Supplies
±200 nA
IDSS
50 μA
3 mA
z DC Choppers
z AC Motor Drives
TJ = 125°C
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
RDS(on)
VGS = 10V, ID = 60A, Note 1
17 mΩ
DS100267(05/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXFZ140N25T
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
80
135
S
Ciss
Coss
Crss
19
1500
185
nF
pF
pF
td(on)
tr
td(off)
tf
33
29
92
22
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 70A
RG = 1Ω (External)
Qg(on)
Qgs
255
90
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 70A
Qgd
62
RthJC
RthCS
0.28 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
140
560
1.3
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 60A, VGS = 0V, Note 1
trr
IRM
200 ns
A
IF = 70A, VGS = 0V
9.3
-di/dt = 100A/μs
VR = 75V
QRM
600
nC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFZ140N25T
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
140
120
100
80
320
280
240
200
160
120
80
VGS = 10V
VGS = 10V
8V
8V
7V
7V
6V
60
6V
5V
40
20
40
5V
0
0
0
2
4
6
8
10
12
14
16
18
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
4.5
320
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 70A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
140
120
100
80
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
VGS = 10V
8V
7V
6V
I D = 140A
I D = 70A
60
40
5V
20
0
-50
-25
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
3
3.5
4
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 70A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
120
VGS = 10V
100
80
60
40
20
0
TJ = 125ºC
TJ = 25ºC
0
40
80
120
160
200
240
280
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXFZ140N25T
Fig. 7. Input Admittance
Fig. 8. Transconductance
180
160
140
120
100
80
220
200
180
160
140
120
100
80
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
60
60
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
20
40
60
80
100
120
140
160
180
200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 125V
I D = 70A
I G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
20
40
60
80
100 120 140 160 180 200 220 240 260
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
100,000
10,000
1,000
100
= 1 MHz
f
RDS( ) Limit
on
C
iss
25µs
100
10
1
100µs
C
oss
TJ = 150ºC
1ms
C
rss
TC = 25ºC
Single Pulse
0
5
10
15
20
25
30
35
40
1
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFZ140N25T
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
DE475 (IXFZ) Outline
G
G
S
S
D
D
D
D
D
D
S
S
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXFZ140N25T (9W)5-25-10-A
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