IXGA12N120A3-TRL [IXYS]
Insulated Gate Bipolar Transistor,;
| 型号： | IXGA12N120A3-TRL |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总5页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM 1200V
IGBTs
VCES = 1200V
IC90 = 12A
VCE(sat) ≤ 3.0V
IXGA12N120A3
IXGP12N120A3
IXGH12N120A3
High Surge Current
TO-263 AA (IXGA)
Ultra-Low Vsat PT IGBTs for
up to 3kHz Switching
G
S
D (Tab)
TO-220AB (IXGP)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
D
D (Tab)
S
IC25
IC90
TC = 25°C
TC = 90°C
22
12
A
A
TO-247 (IXGH)
ICM
TC = 25°C, 1ms
60
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 10Ω
ICM = 24
A
(RBSOA)
Clamped Inductive Load
VCE ≤ 0.8 • VCES
G
PC
TC = 25°C
100
W
D
S
D (Tab)
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
G = Gate
S = Source
D
= Drain
Tab = Drain
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6
1.13 / 10
N/lb.
Nm/lb.in.
z Optimized for Low Conduction Losses
z International Standard Packages
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified
Min.
1200
2.5
Typ.
Max.
Applications
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
z Power Inverters
z UPS
5.0
z Motor Drives
10 μA
275 μA
z SMPS
TJ = 125°C
TJ = 125°C
z PFC Circuits
IGES
VCE = 0V, VGE = ±20V
±100 nA
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
VCE(sat)
IC = IC90, VGE = 15V, Note 1
2.40
2.75
3.0
V
V
© 2010 IXYS CORPORATION, All Rights Reserved
DS100212B(11/10)
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
8.8
44
Max.
TO-263 Outline
gfs
IC = IC90, VCE = 10V, Note 1
5.2
S
A
IC(on)
VGE = 10V, VCE = 10V, Note 1
Cies
Coes
Cres
550
30
8
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
IC = IC90, VGE = 15V, VCE = 600V
Qg
20.4
3.1
nC
nC
nC
Qge
Qgc
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
8.5
Resistive Switching Times, TJ = 25°C
IC = IC90, VGE = 15V
td(on)
tr
td(off)
tf
35
140
62
ns
ns
ns
ns
VCE = 960V, RG = 10Ω
1035
td(on)
35
ns
Resistive Switching Times, TJ = 125°C
IC = IC90, VGE = 15V
tr
td(off)
tf
167
70
1475
ns
ns
ns
VCE = 960V, RG = 10Ω
RthJC
RthCS
1.25 °C/W
TO-247
TO-220
0.21
0.50
°C/W
°C/W
TO-220 Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
TO-247 Outline
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
∅ P
1
2
3
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
1 = Gate 2 = Collector
3 = Emitter
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
e
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Terminals: 1 - Gate
3 - Emitted
2 - Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
24
20
16
12
8
70
60
50
40
30
20
10
0
VGE = 15V
VGE = 15V
13V
13V
11V
10V
8V
7V
9V
11V
10V
9V
8V
6V
5V
7V
4
6V
5V
0
0.0
0.0
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
6.0
15
0
-50
3
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
24
20
16
12
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 15V
VGE = 15V
13V
11V
10V
I C = 24A
8V
7V
9V
I C = 12A
6V
5V
4
I C = 6A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
35
30
25
20
15
10
5
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
TJ = 25ºC
TJ = - 40ºC
25ºC
125ºC
I C = 24A
12A
6A
0
6
7
8
9
10
11
12
13
14
4
5
6
7
8
9
VGE - Volts
VGE - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Fig. 7. Transconductance
Fig. 8. Gate Charge
12
10
8
16
14
12
10
8
TJ = - 40ºC
VCE = 600V
I C = 12A
I G = 10mA
25ºC
125ºC
6
6
4
4
2
2
0
0
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
20
22
40
1
IC - Amperes
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
Fig. 10. Capacitance
28
24
20
16
12
8
1,000
100
10
C
C
ies
oes
TJ = 125ºC
C
res
RG = 10Ω
4
dv / dt < 10V / ns
= 1 MHz
5
f
0
1
200
300
400
500
600
700
800
900
1000
1100
1200
0
10
15
20
25
30
35
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
aaaaaa
3.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
240
220
200
180
160
140
120
100
240
220
200
180
160
140
120
100
RG = 10Ω , VGE = 15V
VCE = 960V
RG = 10Ω , VGE = 15V
VCE = 960V
TJ = 125ºC
I C = 24A
I C = 12A
TJ = 25ºC
6
8
10
12
14
16
18
20
22
24
25
35
45
55
65
75
85
95
105
115
125
IC - Amperes
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
1600
1500
1400
1300
1200
1100
1000
900
100
260
240
220
200
180
160
140
140
tf
td(off) - - - -
tr
td(on)
- - - -
90
80
70
60
50
40
30
20
120
100
80
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 960V
VCE = 960V
I C = 12A
I C = 24A
I C = 12A
60
I C = 24A
40
20
800
0
30
60
90
120
150
180
210
240
270
300
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
2200
2000
1800
1600
1400
1200
1000
800
110
100
90
1800
1700
1600
1500
1400
1300
1200
1100
700
tf
td(off)
- - - -
tf
td(off) - - - -
600
500
400
300
200
100
0
TJ = 125ºC, VGE = 15V
RG = 10Ω, VGE = 15V
VCE = 960V
VCE = 960V
I C = 12A
TJ = 125ºC
80
70
TJ = 25ºC
60
I C = 24A
50
40
600
30
0
30
60
90
120
150
180
210
240
270
300
6
8
10
12
14
16
18
20
22
24
RG - Ohms
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_12N120A3(2M)02-11-10
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