IXGA20N120B3 [IXYS]

GenX3 1200V IGBT; GenX3 1200V IGBT


型号：	IXGA20N120B3
厂家：	IXYS CORPORATION
描述：	GenX3 1200V IGBT GenX3 1200V IGBT 双极性晶体管
文件：	总6页 (文件大小：211K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Technical Information

GenX3^TM1200V IGBT

V_CES= 1200V

I_C90= 20A

V_CE(sat)≤ 3.1V

IXGA20N120B3

IXGP20N120B3

High Speed Low Vsat PT

IGBTs 3-20 kHz Switching

TO-263 (IXGA)

Symbol

Test Conditions

Maximum Ratings

C (TAB)

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

1200

TO-220 (IXGP)

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1ms

C (TAB)

SSOA

(RBSOA)

V_GE= 15V, T_J= 125°C, R_G= 15Ω

Clamped Inductive load

I_CM= 40

@V_CE≤ 1200

G = Gate

= Collector

P_C

T_C= 25°C

180

E = Emitter

TAB = Collector

T_J

T_JM

T_stg

-55 ... +150

150

°C

-55 ... +150

Features

M_d

F_C

Mounting Torque (TO-220)

Mounting Force (TO-263)

1.13/10

10..65 / 2.2..14.6

Nm/lb.in.

N/lb.

^zOptimized for Low Conduction and

Switching Losses

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

300

260

°C

^zSquare RBSOA

^zInternational Standard Packages

Weight

TO-263

TO-220

2.5

3.0

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Applications

Symbol

Test Conditions

Characteristic Values

^zPower Inverters

^zUPS

^zMotor Drives

^zSMPS

^zPFC Circuits

^zWelding Machines

^zInductive Heating

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

1200

2.5

5.0

I_CES

V_CE= V_CES,V_GE= 0V

25 μA

T_J= 125°C

±100

3.1

I_GES

V_CE= 0V, V_GE= ±20V

V_CE(sat)

I_C= 16A, V_GE= 15V, Note 2

2.7

2.8

DS100126(03/09)

IXGA20N120B3

IXGP20N120B3

Symbol

Test Conditions

Characteristic Values

TO-263 (IXGA) Outline

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

I_C= 16A, V_CE= 10V, Note 2

V_CE= 25V, V_GE= 0V, f = 1MHz

7.5

12.5

C_ies

C_oes

C_res

1070

Q_g

7.4

Q_ge

Q_gc

I_C= 16A, V_GE= 15V, V_CE= 0.5 • V_CES

t_d(on)

t_ri

E_on

t_d(off)

t_fi

Inductive load, T_J= 25°C

I_C= 16A, V_GE= 15V

0.92

150

155

V_CE= 600V, R_G= 15Ω

Note 1

E_off

0.56

1.00 mJ

t_d(on)

t_ri

E_on

t_d(off)

t_fi

Inductive load, T_J= 125°C

I_C= 16A, V_GE= 15V

1.60

180

540

1.63

V_CE= 600V, R_G= 15Ω

Note 1

E_off

R_thJC

R_thCK

0.69 °C/W

°C/W

TO-220

0.50

TO-220 (IXGP) Outline

Notes:

1. Switching Times may Increase for V_CE(Clamp) > 0.5 • V_CES

Higher T_Jor Increased R_G.

2. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

Pins: 1 - Gate

2 - Drain

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXGA20N120B3

IXGP20N120B3

Fig. 1. Output Characteristics

@ 25ºC

Fig. 2. Extended Output Characteristics

@ 25ºC

140

120

100

V_GE= 15V

13V

11V

V_GE= 15V

13V

11V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V_CE- Volts

Fig. 4. Dependence of V_CE(sat)on

Junction Temperature

Fig. 3. Output Characteristics

@ 125ºC

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_GE= 15V

13V

11V

V_GE= 15V

I _C= 32A

I _C= 16A

I _C= 8A

-50

-25

100

125

150

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

V_CE- Volts

T_J- Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

Fig. 6. Input Admittance

T_J= 25ºC

I _C= 32A

T_J= - 40ºC

25ºC

125ºC

16A

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

8.5

9.0

V_GE- Volts

IXGA20N120B3

IXGP20N120B3

Fig. 7. Transconductance

Fig. 8. Gate Charge

T_J= - 40ºC

V_CE= 600V

I _C= 16A

_G= 10 mA

25ºC

125ºC

Q_G- NanoCoulombs

I_C- Amperes

Fig. 9. Capacitance

Fig. 10. Reverse-Bias Safe Operating Area

10,000

1,000

100

= 1MHz

ies

oes

T_J= 125ºC

R_G= 15Ω

dV / dt < 10V / ns

res

200 300 400 500 600 700 800 900 1000 1100 1200 1300

V_CE- Volts

Fig. 11. Maximum Transient Thermal Impedance

1.00

0.10

0.01

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: G_20N120B3(4L)03-17-09

IXGA30N120B3

IXGP30N120B3

Fig. 12. Inductive Switching

Energy Loss vs. Gate Resistance

Fig. 13. Inductive Switching

Energy Loss vs. Collector Current

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3.2

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

_on- - - -

T_J= 125ºC , V_GE= 15V

V_CE= 600V

off

R_G= 15

Ω ,

_CE= 600V

V_GE= 15V

T_J= 125ºC

I _C= 32A

T_J= 25ºC

I _C= 16A

10 12

14 16 18

20 22

24 26 28

30 32

R_G- Ohms

I_C- Amperes

Fig. 14. Inductive Switching

Energy Loss vs. Junction Temperature

Fig. 15. Inductive Turn-off

Switching Times vs. Gate Resistance

800

700

600

500

400

300

200

600

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4.8

4.4

4.0

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

t _{f i}

T_J= 125ºC,

V_CE= 600V

t_d(off)

- - - -

_GE= 15V

_on- - - -

R_G= 15Ω V_GE= 15V

off

500

400

300

200

100

V_CE= 600V

I _C= 32A

I _C= 16A

95 105 115 125

R_G- Ohms

T_J- Degrees Centigrade

Fig. 17. Inductive Turn-off

Switching Times vs. Junction Temperature

Fig. 16. Inductive Turn-off

Switching Times vs. Collector Current

800

700

600

500

400

300

200

100

240

220

200

180

160

140

120

100

800

700

600

500

400

300

200

100

260

240

220

200

180

160

140

120

100

t_{f i}

R_G= 15Ω , V_GE= 15V

t_d(off)- - - -

t _{f i}

R_G= 15Ω , V_GE= 15V

t_d(off)- - - -

V_CE= 600V

T_J= 125ºC

I _C= 16A

= 32A

T_J= 25ºC

95 105 115 125

10 12 14 16 18 20 22 24 26 28 30 32

I_C- Amperes

T_J- Degrees Centigrade

IXGA20N120B3

IXGP20N120B3

Fig. 18. Inductive Turn-on

Switching Times vs. Gate Resistance

Fig. 19. Inductive Turn-on

Switching Times vs. Collector Current

200

180

160

140

120

100

140

120

100

t_{r i}

t_d(on)

t_{r i}

t_d(on)

- - - -

T_J= 125ºC, V_GE= 15V

_CE= 600V

R_G= 15Ω , V_GE= 15V

V_CE= 600V

I _C= 32A

T_J= 125ºC

I _C= 16A

T_J= 25ºC

10 12

14 16 18

20 22

24 26 28

30 32

I_C- Amperes

R_G- Ohms

Fig. 20. Inductive Turn-on

Switching Times vs. Junction Temperature

160

140

120

100

t_{r i}

t_d(on)

- - - -

R_G= 15Ω , V_GE= 15V

V_CE= 600V

I _C= 32A

I _C= 16A

95 105 115 125

T_J- Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: G_20N120B3(4L)03-17-09

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