IXGA30N60C3 [IXYS]
GenX3 600V IGBT; GenX3 600V IGBT
| 型号： | IXGA30N60C3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 600V IGBT |
| 文件： | 总6页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM 600V IGBT
IXGA30N60C3
IXGP30N60C3
IXGH30N60C3
VCES = 600V
IC110 = 30A
VCE(sat) ≤ 3.0V
tfi(typ) = 47ns
High Speed PT IGBTs for
40-100kHz switching
TO-263(IXGA)
G
Symbol Test Conditions
Maximum Ratings
E
C(TAB)
VCES
VCGR
TC = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
TO-220(IXGP)
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
IC25
IC110
ICM
TC = 25°C
60
30
A
A
A
G
TC = 110°C
C
E
TC = 25°C, 1ms
150
SSOA
V
GE = 15V, TVJ = 125°C, RG = 5Ω
ICM = 60
A
TO-247(IXGH)
(RBSOA)
Clamped inductive load @ ≤ 600V
PC
TC = 25°C
220
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
G
C(TAB)
C
-55 ... +150
E
TL
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
G = Gate
E = Emitter
C
= Collector
TSOLD
TAB = Collector
Md
Mounting torque (TO-220 & TO-247)
1.13/10
Nm/lb.in.
Features
Weight
TO-220
TO-263
TO-263
2.5
3.0
3.0
g
g
g
ꢀOptimized for low switching losses
ꢀSquareRBSOA
ꢀInternational standard packages
Advantages
Symbol Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
600
3.5
Typ.
Max.
ꢀHigh power density
ꢀLow gate drive requirement
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
V
V
5.5
Applications
VCE = VCES
VGE = 0V
15 μA
300 μA
ꢀHigh Frequency Power Inverters
ꢀUPS
TJ = 125°C
TJ = 125°C
ꢀMotorDrives
IGES
VCE = 0V, VGE = ± 20V
±100 nA
ꢀSMPS
VCE(sat)
IC = 20A, VGE = 15V, Note 1
2.6
1.8
3.0
V
V
ꢀPFCCircuits
ꢀBatteryChargers
ꢀWeldingMachines
ꢀLampBallasts
© 2008 IXYS CORPORATION, All rights reserved
DS100012A(11/08)
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Symbol
Test Conditions
Characteristic Values
TO-220 (IXGP) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
IC = 20A, VCE = 10V, Note 1
9
16
S
fs
C
915
78
pF
pF
pF
ies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
32
Qg
38
8
nC
nC
nC
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
17
td(on)
tri
16
26
ns
ns
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Eon
td(off)
0.27
42
mJ
ns
75
VCE = 300V, RG = 5Ω
t
47
ns
fi
Eoff
0.09 0.18
mJ
td(on)
tri
17
28
ns
ns
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
Eon
td(off)
0.44
70
mJ
ns
VCE = 300V, RG = 5Ω
t
90
ns
fi
Eoff
0.33
mJ
RthJC
RthCS
0.56 °C/W
TO-247 (IXGH) AD Outline
TO-220
TO-247
0.50
0.21
°C/W
°C/W
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXGA) Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2 6,759,692
6,710,463
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
by one or more of the following U.S. patents: 4,850,072
4,881,106
6,259,123 B1
6,306,728 B1
6,771,478 B2 7,071,537
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
40
35
30
25
20
15
10
5
180
160
140
120
100
80
VGE = 15V
13V
VGE = 15V
11V
13V
11V
9V
7V
60
9V
7V
40
20
0
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
3.2
15
0
2
4
6
8
10
12
14
16
18
20
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
40
35
30
25
20
15
10
5
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VGE = 15V
13V
11V
VGE = 15V
I C = 40A
9V
I C = 20A
I C = 10A
7V
0
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
70
60
50
40
30
20
10
0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
TJ = 25ºC
I C = 40A
20A
10A
TJ = 125ºC
25ºC
- 40ºC
7
8
9
10
11
12
13
14
5
6
7
8
9
10
11
VGE - Volts
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Fig. 8. Gate Charge
Fig. 7. Transconductance
24
22
20
18
16
14
12
10
8
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 20A
I G = 10 mA
25ºC
125ºC
6
6
4
4
2
2
0
0
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
60
50
40
30
20
10
0
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
RG = 5Ω
dV / dt < 10V / ns
C
res
10
100
200
300
400
500
600
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
E
E
on - - - -
off
RG = 5
E
E
on - - - -
TJ = 125ºC , VGE = 15V
CE = 300V
off
VGE = 15V
ꢀ ,
CE = 300V
1.0
0.8
0.6
0.4
0.2
0.0
V
V
I C = 40A
TJ = 125ºC
TJ = 25ºC
I C = 20A
10
15
20
25
30
35
40
4
6
8
10
12
14
16
18
20
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
180
170
160
150
140
130
120
110
100
90
140
0.7
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
E
E
on - - - -
RG = 5ꢀ VGE = 15V
t f
td(off)
- - - -
130
120
110
100
90
off
0.6
0.5
0.4
0.3
0.2
0.1
0
TJ = 125ºC, GE = 15V
V
,
VCE = 300V
CE = 300V
V
I C = 40A
I C = 40A
80
70
I C = 20A
60
I C = 20A
50
80
40
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
180
160
140
120
100
80
110
100
90
80
70
60
50
40
30
20
160
140
120
100
80
90
t f
RG = 5ꢀ , VGE = 15V
td(off) - - - -
tf
RG = 5Ω , VGE = 15V
td(off)
- - - -
80
70
60
50
40
30
20
VCE = 300V
VCE = 300V
TJ = 125ºC
I
= 40A, 20A
C
60
60
40
TJ = 25ºC
40
20
20
0
25
35
45
55
65
75
85
95 105 115 125
10
15
20
25
30
35
40
TJ - Degrees Centigrade
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Fig. 19. Inductive Turn-on
Fig. 18. Inductive Turn-on
Switching Times vs. Collector Current
Switching Times vs. Gate Resistance
70
60
50
40
30
20
10
0
24
90
80
70
60
50
40
30
20
10
30
28
26
24
22
20
18
16
14
tr
td(on)
- - - -
tr
td(on)
- - - -
22
20
18
16
14
12
10
RG = 5Ω , VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 300V
VCE = 300V
TJ = 125ºC
I C = 40A
TJ = 25ºC
I C = 20A
10
15
20
25
30
35
40
4
6
8
10
12
14
16
18
20
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
75
70
65
60
55
50
45
40
35
30
25
20
15
21
20
19
18
17
16
15
I C = 40A
tr
td(on)
- - - -
RG = 5Ω , VGE = 15V
VCE = 300V
I C = 20A
25
35
45
55
65
75
85
95 105 115 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_30N60C3(4D) 7-25-08
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