IXGA50N60C4 [IXYS]
High-Gain IGBTs; 高增益的IGBT
| 型号： | IXGA50N60C4 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High-Gain IGBTs |
| 文件： | 总6页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES = 600V
IC110 = 36A
VCE(sat) ≤ 2.50V
High-Gain IGBTs
IXGA50N60C4
IXGP50N60C4
IXGH50N60C4
TO-263 AA (IXGA)
High-Speed PT Trench IGBT
G
E
C (Tab)
TO-220AB (IXGP)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
C (Tab)
E
IC25
IC110
TC = 25°C
TC = 110°C
90
36
A
A
TO-247 (IXGH)
ICM
TC = 25°C, 1ms
220
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 10Ω
ICM = 72
A
(RBSOA)
Clamped Inductive Load
VCE ≤ VCES
G
PC
TC = 25°C
290
W
C
E
C (Tab)
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
G = Gate
S = Emitter
D
= Collector
Tab = Collector
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6
1.13 / 10
N/lb.
Nm/lb.in.
Features
z Optimized for Low Switching Losses
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
z
International Standard Packages
z Square RBSOA
Advantages
Symbol
Test Conditions
Characteristic Values
z Easy to Mount
z Space Savings
(TJ = 25°C, Unless Otherwise Specified
Min.
600
4.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.5
Applications
25 μA
mA
±100 nA
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Lamp Ballasts
TJ = 125°C
TJ = 125°C
1
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 36A, VGE = 15V, Note 1
1.95
1.65
2.50
V
V
© 2011 IXYS CORPORATION, All Rights Reserved
DS100298B(04/11)
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-263 Outline
Min.
Typ.
Max.
gfs
Cie
Coes
Cres
IC = IC110, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
20
30
S
1900
100
60
pF
pF
pF
s
Qg
113
13
nC
nC
Qge
Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
44
nC
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
td(on)
tri
40
66
ns
Inductive Load, TJ = 25°C
ns
IC = 36A, VGE = 15V
Eon
td(off)
tfi
0.95
270
63
mJ
ns
VCE = 400V, RG = 10Ω
ns
Note 2
Eof
0.84
1.55 mJ
f
td(on)
tri
30
45
ns
ns
Inductive Load, TJ = 125°C
IC = 36A, VGE = 15V
Eon
td(off)
tfi
1.10
210
96
mJ
ns
VCE = 400V, RG = 10Ω
ns
Note 2
Eoff
0.90
mJ
RthJC
RthCS
0.43 °C/W
TO-247
TO-220
0.21
0.50
°C/W
°C/W
TO-220 Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
TO-247 Outline
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
∅ P
1
2
3
1 = Gate 2 = Collector
3 = Emitter
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
e
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Terminals: 1 - Gate
3 - Emitter
2 - Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
100
90
80
70
60
50
40
30
20
10
0
VGE = 15V
14V
VGE = 15V
300
250
200
150
100
50
13V
11V
10V
13V
9V
8V
12V
11V
10V
9V
8V
7V
6V
7V
6V
0
0
0
6
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
100
90
80
70
60
50
40
30
20
10
0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
12V
11V
10V
I C = 72A
9V
I C = 36A
8V
7V
6V
I C = 18A
VGE = 15V
-25
0
25
50
75
100
125
150
0.5
1
1.5
2
2.5
3
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
160
140
120
100
80
4.5
4.0
3.5
3.0
2.5
2.0
1.5
TJ = 25ºC
TJ = - 40ºC
25ºC
I C = 72A
125ºC
60
36A
40
18A
8
20
0
7
9
10
11
12
13
14
15
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
VGE - Volts
VGE - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 8. Gate Charge
Fig. 7. Transconductance
45
40
35
30
25
20
15
10
5
16
14
12
10
8
VCE = 300V
TJ = - 40ºC
I C = 36A
I G = 10mA
25ºC
125ºC
6
4
2
0
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
650
1
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
80
= 1 MHz
f
70
60
50
40
30
20
10
0
C
ies
C
C
oes
TJ = 125ºC
RG = 10
res
Ω
dv / dt < 10V / ns
10
0
5
10
15
20
25
30
35
40
100
150
200
250
300
350
400
450
500
550
600
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 13. Inductive Switching Energy Loss vs.
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Collector Current
3.5
3
3.5
4.5
4
4.5
4
E
E
E
E
on - - - -
on - - - -
off
TJ = 125ºC , VGE = 15V
CE = 400V
off
3
RG = 10
VGE = 15V
Ω ,
3.5
3
3.5
3
V
VCE = 400V
2.5
2
2.5
2
I C = 72A
TJ = 125ºC, 25ºC
2.5
2
2.5
2
1.5
1
1.5
1
1.5
1
1.5
1
I C = 36A
0.5
0
0.5
0
0.5
0
0.5
0
15
25
35
45
IC - Amperes
55
65
75
10
15
20
25
30
35
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
135
550
500
450
400
350
300
250
200
150
100
3.5
3
3.5
3
t f i
td(off)
- - - -
E
E
on - - - -
130
125
120
115
110
105
100
95
off
TJ = 125ºC, VGE = 15V
RG = 10
VGE = 15V
Ω ,
VCE = 400V
VCE = 400V
2.5
2
2.5
2
I C = 72A
I C = 72A
1.5
1
1.5
1
I C = 36A
I C = 36A
0.5
0
0.5
0
90
25
35
45
55
65
75
85
95
105
115
125
10
15
20
25
30
35
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
130
120
110
100
90
320
300
280
260
240
220
200
180
160
150
130
110
90
360
tf i
t
d(on) - - - -
t f i
td(off)
- - - -
320
280
240
200
160
120
RG = 10
, VGE = 15V
Ω
RG = 10
, VGE = 15V
Ω
VCE = 400V
VCE = 400V
TJ = 25ºC, 125ºC
I C = 36A
80
I C = 72A
70
70
50
60
50
30
25
35
45
55
65
75
85
95
105
115
125
15
25
35
45
55
65
75
IC - Amperes
TJ - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
140
120
100
80
80
160
140
120
100
80
90
80
70
60
50
40
30
20
tr i
td(on)
- - - -
, VGE = 15V
tr i
td(on) - - - -
70
60
50
40
30
20
10
RG = 10
Ω
TJ = 125ºC, VGE = 15V
VCE = 400V
VCE = 400V
I C = 72A
TJ = 25ºC
60
40
60
TJ = 125ºC
I C = 36A
20
40
0
20
15
25
35
45
55
65
75
10
15
20
RG - Ohms
25
30
35
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
160
140
120
100
80
56
t r i
td(on) - - - -
52
48
44
40
36
32
28
24
RG = 10
,
VGE = 15V
Ω
VCE = 400V
I C = 72A
60
40
I C = 36A
20
0
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_50N60C4(L5)03-23-11
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