IXGH25N100AU1 [IXYS]
High speed IGBT with Diode; 高速IGBT与二极管
| 型号： | IXGH25N100AU1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High speed IGBT with Diode |
| 文件： | 总6页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary data
VCES
IC25
VCE(sat)
Low VCE(sat)
High speed IGBT
withDiode
1000 V 50 A 3.5 V
1000 V 50 A 4.0 V
IXGH25N100U1
IXGH25N100AU1
TO-247 AD (IXGH)
Symbol
TestConditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
1000
1000
V
V
G
C
E
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G = Gate
E = Emitter
C = Collector
TAB = Collector
IC25
IC90
ICM
TC = 25°C
50
25
A
A
A
TC = 90°C
TC = 25°C, 1 ms
100
SSOA
VGE= 15 V, TVJ = 125°C, RG = 33 Ω
ICM = 50
A
Features
(RBSOA)
Clamped inductive load, L = 100 µH
@ 0.8 VCES
l International standard package
JEDEC TO-247 AD
l IGBT and anti-parallel FRED in one
PC
TC = 25°C
200
W
TJ
-55 ... +150
150
°C
°C
°C
package
TJM
Tstg
l 2nd generation HDMOSTM process
-55 ... +150
l
l Low VCE(sat)
- for minimum on-state conduction
losses
l MOS Gate turn-on
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
- drive simplicity
l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
BVCES
VGE(th)
IC = 4.5 mA, VGE = 0 V
1000
2.5
V
IC = 500 µA, VCE = VGE
5.5
V
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
500
8
µA
mA
Advantages
l Saves space (two devices in one
package)
l Easy to mount (isolated mounting
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
VCE(sat)
IC = IC90, VGE = 15 V
25N100U1
25N100AU1
3.5
4.0
V
V
screw hole)
l Reduces assembly time and cost
l
© 1996 IXYS All rights reserved
95587(9/96)
IXGH25N100U1 IXGH25N100AU1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ.
max.
IC = IC90; VCE = 10 V,
8
15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
2750
270
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
130
25
180 nC
60 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
55
1 = Gate
2 = Collector
3 = Emitter
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH,
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times
td(on)
tri
td(off)
tfi
100
200
500
500
5
ns
ns
Tab = Collector
ns
25N100AU1
ns
may increase
Eoff
25N100AU1
mJ
for VCE (Clamp) > 0.8 • VCES
,
higher TJ or increased RG
td(on)
tri
100
250
3.5
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
CE = 0.8 VCES, RG = Roff = 33 Ω
Eon
td(off)
tfi
mJ
V
720 1000 ns
950 3000 ns
Remarks: Switching times
may increase
25N100U1
25N100AU1
25N100U1
25N100AU1
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
800
10
6
ns
mJ
mJ
Eoff
RthJC
RthCK
0.62 K/W
K/W
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V,
min. typ. max.
2.5
18
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
16
TJ =125°C 120
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C 35
A
VR = 540 V
ns
50 ns
RthJC
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXGH25N100U1 IXGH25N100AU1
© 1996 IXYS All rights reserved
IXGH25N100U1 IXGH25N100AU1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXGH25N100U1 IXGH25N100AU1
Fig.11 Maximum Forward Voltage Drop
Fig.12 Peak Forward Voltage VFR and
Forward Recovery Time tFR
100
80
60
40
20
0
50
40
30
20
10
0
1000
800
600
400
200
0
TJ = 125°C
IF =37A
VFR
TJ = 100°C
t
TJ = 150°C
fr
TJ = 25°C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
400
500
600
Voltage Drop - Volts
diF /dt - A/µs
Fig.13Junction Temperature Dependence
off IRM and Qr
Fig.14 Reverse Recovery Chargee
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4
max.
IF = 30A
TJ = 100°C
VR = 540V
3
2
1
0
typ.
IF = 60A
IRM
Qr
IF = 30A
IF = 15A
0
40
80
120
160
1
10
100
diF /dt - A/µs
1000
TJ - Degrees C
Fig.15 Peak Reverse Recovery Current
Fig.16 Reverse Recovery Time
50
40
30
20
10
0
0.8
0.6
0.4
0.2
0.0
max.
IF = 30A
TJ = 100°C
max.
TJ = 100°C
VR = 540V
IF = 30A
VR = 540V
typ.
IF = 60A
IF = 30A
IF = 15A
typ.
IF = 60A
IF = 30A
IF = 15A
200
400
600
0
200
400
600
diF /dt - A/µs
diF /dt - A/µs
© 1996 IXYS All rights reserved
IXGH25N100U1 IXGH25N100AU1
Fig.17 Diode Transient Thermal resistance junction to case
1.00
0.10
0.01
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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