IXGH28N140B3H1 [IXYS]
GenX3 1400V IGBTs w/ Diode; GenX3 1400V的IGBT W /二极管
| 型号： | IXGH28N140B3H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 1400V IGBTs w/ Diode |
| 文件： | 总7页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM 1400V
IGBTs w/ Diode
VCES = 1400V
IC110 = 28A
VCE(sat) ≤ 3.60V
IXGH28N140B3H1
IXGX28N140B3H1
IXGK28N140B3H1
Avalanche Rated
TO-247 (IXGH)
G
C
Tab
E
Symbol
VCES
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Maximum Ratings
PLUS247 (IXGX)
1400
1400
±20
V
VCGR
V
V
V
VGES
VGEM
Transient
±30
G
C
E
IC25
IC110
IF110
ICM
TC = 25°C
60
28
A
A
A
A
Tab
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
15
TO-264 (IXGK)
150
IA
EAS
TC = 25°C
TC = 25°C
28
360
A
mJ
G
C
E
SSOA
(RBSOA)
VGE= 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
ICM = 120
A
@ VCES < VCE
Tab
PC
TC = 25°C
300
W
G = Gate
C = Collector
E
= Emitter
TJ
-55 ... +150
150
°C
°C
°C
Tab = Collector
TJM
Tstg
-55 ... +150
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
260
°C
°C
z
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Avalanche Rated
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
z
z
Md
FC
Mounting Torque (IXGH & IXGK)
Mounting Force (IXGX)
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
z
z
Weight
TO-247 & PLUS247
TO-264
6
10
g
g
Advantages
z
High Power Density
Low Gate Drive Requirement
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.0
V
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
VCE = VCES, VGE = 0V
50 μA
z
Note 2, TJ = 125°C
1 mA
z
z
IGES
VCE = 0V, VGE = ±20V
±100 nA
z
z
VCE(sat)
IC = IC110, VGE = 15V, Note 1
TJ = 125°C
3.00
3.05
3.60
V
z
DS99736A(11/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = IC110, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1 MHz
12
19
S
Cies
Coes
Cres
Qg(on)
Qge
Qgc
td(on)
tri
1830
163
46
pF
pF
pF
nC
nC
nC
ns
88
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
12
38
16
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 960V, RG = 5Ω
Note 3
36
ns
Eon
td(off)
tfi
3.6
190
360
3.9
16
mJ
400 ns
ns
Eoff
td(on)
tri
6.5
J
ns
Inductive load, TJ = 125°C
50
ns
IC = IC110, VGE = 15V
Eon
td(off)
tfi
7.3
215
700
6.5
mJ
ns
VCE = 960V, RG = 5Ω
ns
Note 3
Eoff
RthJC
RthCs
mJ
0.42 °C/W
°C/W
0.21
0.15
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
trr
IF = 20A, VGE = 0V, Note 1
3.0
V
V
TJ = 150°C
2.65
350
ns
IF = 20A, VGE = 0V, -diF/dt = -200A/μs,
VR = 1200V, TJ = 125°C
IRM
18.5
A
RthJC
0.90 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Ices measurement.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
TO-247 Outline
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
∅ P
1
2
3
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
e
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
Terminals: 1 - Gate
3 - Emitted
2 - Collector
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
PLUS247Outline
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
Terminals: 1 - Gate
2 - Collector
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
3 - Emitter
Dim.
Millimeter
Inches
TO-264 AA Outline
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
Back Side
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
S
T
3.81
1.78
6.04
1.57
4.32
2.29
6.30
1.83
.150
.070
.238
.062
.170
.090
.248
.072
Terminals:
1
= Gate
2,4 = Collector
Emitter
3
=
© 2010 IXYS CORPORATION, All Rights Reserved
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
200
60
50
40
30
20
10
0
VGE = 15V
13V
VGE = 15V
180
160
140
120
100
80
13V
11V
9V
7V
11V
9V
60
7V
5V
40
20
5V
0
0
5
10
15
20
25
0
0
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
15
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
VGE = 15V
13V
VGE = 15V
11V
I C = 56A
9V
I C = 28A
7V
5V
I C = 14A
-50
-25
0
25
50
75
100
125
150
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
8
7
6
5
4
3
2
120
100
80
60
40
20
0
TJ = - 40ºC
25ºC
125ºC
TJ = 25ºC
I C = 56A
28A
14A
6
7
8
9
10
VGE - Volts
11
12
13
14
3
4
5
6
7
8
9
10
11
VGE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
28
24
20
16
12
8
16
VCE = 600V
I C = 28A
14
12
10
8
I G = 10mA
TJ = - 40ºC
25ºC
125ºC
6
4
4
2
0
0
0
10
20
30
40
50
60
70
80
90
0
20
40
60
80
100
120
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
140
120
100
80
f = 1 MHz
C
ies
C
oes
60
40
TJ = 125ºC
RG = 5Ω
20
dv / dt < 10V / ns
C
res
10
0
0
5
10
15
20
25
30
35
40
200
400
600
800
1000
1200
1400
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 13. Inductive Swiching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
14
14
12
10
8
18
16
14
12
10
8
19
17
15
13
11
9
E
E
on - - - -
off
E
E
on - - - -
12
10
8
off
TJ = 125ºC , VGE = 15V
VCE = 960V
RG = 5Ω VGE = 15V
,
I C = 56A
VCE = 960V
TJ = 125ºC
6
6
I C = 28A
4
4
6
7
2
2
TJ = 25ºC
4
5
I C = 14A
60
0
0
2
3
10
15
20
25
30
35
40
45
50
55
60
0
10
20
30
40
50
70
RG - Ohms
IC - Amperes
Fig. 14. Inductive Swiching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
14
12
10
8
14
800
1000
800
600
400
200
0
E
E
on - - - -
off
RG = 5Ω
tfi
td(off)
- - - -
12
10
8
VGE = 15V
,
750
700
650
600
550
TJ = 125ºC, VGE = 15V
VCE = 960V
VCE = 960V
I C = 56A
I C = 28A
6
6
I C = 28A
I C = 56A
4
4
2
2
I C = 14A
45
0
0
25
35
55
65
75
85
95
105
115
125
0
10
20
30
40
50
60
70
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
900
800
700
600
500
400
300
200
310
280
250
220
190
160
130
100
1200
1000
800
600
400
200
0
350
tfi
RG = 5Ω , VGE = 15V
CE = 960V
td(off)
- - - -
tfi
td(off)
- - - -
, VGE = 15V
300
250
200
150
100
50
RG = 5
ꢀ
V
VCE = 960V
TJ = 125ºC
I C = 28A
TJ = 25ºC
I C = 56A
10
15
20
25
30
35
40
45
50
55
60
25
35
45
55
65
75
85
95
105
115
125
IC - Amperes
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
280
240
200
160
120
80
140
120
100
80
160
36
32
28
24
20
16
12
8
tri
td(on) - - - -
140
120
100
80
tri
td(on) - - - -
, VGE = 15V
TJ = 125ºC, VGE = 15V
RG = 5
Ω
VCE = 960V
VCE = 960V
I C = 56A
60
TJ = 25ºC
60
40
I C = 28A
TJ = 125ºC
40
40
20
20
0
0
0
4
0
10
20
30
40
50
60
70
10
15
20
25
30
35
40
45
50
55
60
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
180
160
140
120
100
80
40
36
32
28
24
20
16
12
8
tri
td(on)
- - - -
, VGE = 15V
RG = 5
Ω
VCE = 960V
I C = 56A
60
I C = 28A
40
20
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_28N140B3H1(4A)11-29-10-B
相关型号：
IXGH28N30AS
Insulated Gate Bipolar Transistor, 56A I(C), 300V V(BR)CES, N-Channel, TO-247SMD, 3 PIN
IXYS
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