IXGH30N60BD1 [IXYS]
HiPerFASTTM IGBT with Diode; HiPerFASTTM IGBT与二极管
| 型号： | IXGH30N60BD1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFASTTM IGBT with Diode |
| 文件： | 总5页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
with Diode
VCES
= 600 V
IXGH 30N60BD1
IXGT 30N60BD1
IC25
VCE(sat)
=
=
60 A
1.8 V
tfi(typ)
= 100 ns
Symbol
TestConditions
MaximumRatings
TO-268
(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
G
E
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C (TAB)
IC25
IC90
ICM
TC = 25°C
60
30
A
A
A
TO-247 AD
(IXGH)
TC = 90°C
TC = 25°C, 1 ms
120
G
C
E
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
ICM = 60
@ 0.8 VCES
A
C (TAB)
PC
TC = 25°C
200
W
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
• Internationalstandardpackage
• ModeratefrequencyIGBTand
antiparallelFREDinonepackage
• Highcurrenthandlingcapability
• NewestgenerationHDMOSTM
process
MaximumLeadandTabtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mountingtorque, TO-247AD
1.13/10
Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
IC = 250mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
5.0
V
Advantages
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 150°C
200
3
mA
mA
• Space savings (two devices in one
package)
• High power density
• Optimized Vce(sat) and switching
speedsformediumfrequency
application
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
VCE(sat)
IC = IC90, VGE = 15 V
1.8
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98510C(7/00)
1 - 5
IXGH 30N60BD1
IXGT 30N60BD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
25
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
2700
240
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
110
22
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
40
td(on)
tri
td(off)
tfi
25
30
ns
ns
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
Min. Max. Min. Max.
130
100
1.0
220 ns
190 ns
2.0 mJ
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
,
Eoff
E
F
4.32 5.49 0.170 0.216
td(on)
tri
25
35
ns
ns
mJ
ns
5.4
6.2 0.212 0.244
Inductive load, TJ = 150°C
G
H
1.65 2.13 0.065 0.084
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
-
4.5
-
0.177
Eon
td(off)
tfi
1.0
200
230
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
ns
,
Eoff
2.5
mJ
N
1.5 2.49 0.087 0.102
RthJC
RthCK
0.62 K/W
K/W
TO-268AA (D3 PAK)
(TO-247 AD)
0.25
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V, Pulse test
min. typ. max.
TJ = 150°C
1.6
2.5
V
V
t
£ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
6
100
25
A
ns
ns
TJ =100°C
RthJC
0.9 K/W
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 5
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH 30N60BD1
IXGT 30N60BD1
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
Fig. 3. Saturation Voltage Characteristics
Fig. 5. Admittance Curves
Fig. 6.Temperature Dependence of
BVDSS & VGE(th)
© 2000 IXYS All rights reserved
3 - 5
IXGH 30N60BD1
IXGT 30N60BD1
Fig. 7. Dependence of EOFF and EOFF on IC.
Fig. 8. Dependence of EOFF on RG.
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. IGBT Transient Thermal
Resistance
© 2000 IXYS All rights reserved
4 - 5
IXGH 30N60BD1
IXGT 30N60BD1
TVJ=100°C
VR = 300V
TVJ=100°C
VR = 300V
IF= 60A
IF= 60A
IF= 30A
IF= 15A
IF= 30A
IF= 15A
TVJ=150°C
TVJ=100°C
TVJ=25°C
Fig. 12 Forward current IF versus VF
Fig. 14 Peak reverse current IRM
versus -diF/dt
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
TVJ=100°C
VR = 300V
TVJ=100°C
IF = 30A
VFR
tfr
IF= 60A
IF= 30A
IF= 15A
IRM
Qr
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 17 Peak forward voltage VFR and tfr
versus diF/dt
Fig. 16 Recovery time trr versus -diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.502
0.193
0.205
0.0052
0.0003
0.0162
Fig. 18 Transient thermal resistance junction to case
© 2000 IXYS All rights reserved
5 - 5
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