IXGH36N60B3C1 [IXYS]
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode; GenX3TM 600V IGBT W /碳化硅反并联二极管
| 型号： | IXGH36N60B3C1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 36A
≤ 1.8V
= 100ns
IXGH36N60B3C1
Medium Speed Low Vsat PT
IGBT for 5 - 40kHz Switching
TO-247
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
G
C
E
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
G = Gate
E = Emitter
C
= Collector
TAB = Collector
IC25
IC110
IF110
ICM
TC = 25°C (Limited by Leads)
TC = 110°C
75
36
A
A
A
A
TC = 110°C
20
Features
TC = 25°C, 1ms
200
z Optimized for Low Conduction and
Switching Losses
SSOA
V
GE= 15V, TVJ = 125°C, RG = 5Ω
ICM = 80
A
(RBSOA)
Clamped Inductive Load
@ ≤ VCES
z Square RBSOA
PC
TC = 25°C
250
W
z Anti-Parallel Schottky Diode
z International Standard Package
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Advantages
TL
TSOLD
1.6mm (0.062 in.) from Case for 10 seconds
Plastic Body for 10 seconds
300
260
°C
°C
z High Power Density
z Low Gate Drive Requirement
Md
Mounting Torque
1.13/10
6
Nm/lb.in.
g
Weight
Applications
z Power Inverters
z UPS
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
z Motor Drives
z SMPS
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.0
V
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
VCE = VCES, VGE = 0V
35
μA
TJ =125°C
1.25 mA
IGES
VCE = 0V, VGE = ± 20V
±100
nA
V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
1.5
1.8
DS100141A(06/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH36N60B3C1
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 30A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
28
42
S
Cies
Coes
Cres
2430
390
28
pF
pF
pF
∅ P
Qg
80
12
36
nC
nC
nC
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
20
26
ns
ns
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 5Ω
Note 2
Dim.
Millimeter
Inches
Eon
td(off)
tfi
0.39
125
100
0.80
mJ
ns
Min. Max.
Min. Max.
200
160
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Eoff
1.50 mJ
td(on)
tri
20
27
ns
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Inductive load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 5Ω
Note 2
20.80 21.46
15.75 16.26
Eon
td(off)
tfi
0.43
180
170
1.50
mJ
ns
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
.780 .800
.177
ns
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
Eoff
mJ
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
RthJC
RthCS
0.50 °C/W
°C/W
0.21
Reverse Diode (SiC)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 20A, VGE = 0V, Note 1
1.65
1.80
2.10
V
V
TJ = 125°C
RthJC
0.90 °C/W
Notes
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGH36N60B3C1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
60
50
40
30
20
10
0
300
250
200
150
100
50
VGE = 15V
VGE = 15V
13V
11V
13V
11V
9V
9V
7V
5V
7V
5V
0
0.0
0.0
4
0.4
0.8
1.2
1.6
2.0
2.4
2.4
15
0
2
4
6
8
10
12
14
150
10
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
VGE = 15V
VGE = 15V
13V
11V
9V
I C = 60A
7V
5V
I C = 30A
I C = 15A
0.4
0.8
1.2
1.6
2.0
-50
-25
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
240
200
160
120
80
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
TJ = - 40ºC
25ºC
125ºC
TJ = 25ºC
I C = 60A
30A
15A
40
0
3
4
5
6
7
8
9
5
6
7
8
9
10
11
12
13
14
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH36N60B3C1
Fig. 7. Transconductance
Fig. 8. Gate Charge
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
VCE = 300V
C = 30A
I G = 10mA
I
25ºC
125ºC
6
4
2
0
0
20
40
60
80
100 120 140 160 180 200 220 240
IC - Amperes
0
10
20
30
40
50
60
70
80
90
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
10,000
1,000
100
90
80
70
60
50
40
30
20
10
0
C
ies
C
oes
TJ = 125ºC
RG = 5
Ω
dV / dt < 10V / ns
= 1 MHz
5
f
C
res
10
0
10
15
20
25
30
35
40
100
150
200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: G_36N60B3C1(55)6-05-09
IXGH36N60B3C1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
E
on - - - -
7
6
5
4
3
2
1
0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
4.8
4.0
3.2
2.4
1.6
0.8
0.0
1.8
1.5
1.2
0.9
0.6
0.3
0.0
E
E
E
on - - - -
off
RG = 5
off
VGE = 15V
Ω ,
TJ = 125ºC , VGE = 15V
CE = 400V
VCE = 400V
V
I C = 60A
TJ = 125ºC, 25ºC
I C = 30A
I C = 15A
15
20
25
30
35
40
45
50
55
60
0
10
20
30
40
50
60
70
80
90
100 110 120
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs. Gate
Resistance
320
300
280
260
240
220
200
180
160
140
120
1100
1000
900
800
700
600
500
400
300
200
100
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
E
off
E
on - - - -
t f i
TJ = 125ºC, VGE = 15V
CE = 400V
td(off)
- - - -
RG = 5
VGE = 15V
CE = 400V
Ω ,
V
V
I C = 60A
I C = 15A, 30A, 60A
I C = 30A
I C = 15A
25
35
45
55
65
75
85
95
105
115
125
0
10
20
30
40
50
60
70
80
90
100 110 120
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
350
300
250
200
150
100
50
220
200
180
160
140
120
100
80
240
220
200
180
160
140
120
100
80
230
210
190
170
150
130
110
90
tf i
RG = 5
t
d(off) - - - -
, VGE = 15V
t f i
td(off)
- - - -
Ω
RG = 5
,
VGE = 15V
Ω
VCE = 400V
VCE = 400V
TJ = 125ºC
TJ = 25ºC
35
I C = 30A
I C = 60A
I C = 15A
0
70
15
20
25
30
40
45
50
55
60
25
35
45
55
65
75
85
95
105
115
125
IC - Amperes
TJ - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH36N60B3C1
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
70
60
50
40
30
20
10
0
24
150
135
120
105
90
110
100
90
80
70
60
50
40
30
20
10
t r i
TJ = 125ºC, VGE = 15V
VCE = 400V
td(on) - - - -
t r i
td(on - - - -
, VGE = 15V
)
23
22
21
20
19
18
17
RG = 5
Ω
VCE = 400V
I C
= 60A
TJ = 125ºC, 25ºC
75
60
I C
= 30A
I C = 15A
45
30
15
0
15
20
25
30
35
40
45
50
55
60
0
10
20
30
40
50
60
70
80
90 100 110 120
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
Fig. 21. Forward Current vs. Forward Voltage
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
16
I C = 60A
T
= 25ºC
J
t r i
td(on) - - - -
, VGE = 15V
RG = 5
Ω
T
= 125ºC
VCE = 400V
J
I C = 30A
I C = 15A
0
25
35
45
55
65
75
85
95
105
115
125
0.0
0.5
1.0
1.5
VF - Volts
2.0
2.5
3.0
TJ - Degrees Centigrade
Fig. 22. Maximum Transient Thermal Impedance for Diode
1.00
0.10
0.01
0.00
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: G_36N60B3C1(55)6-05-09
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