IXGH60N60B2 [IXYS]
Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching; 优化为10-25千赫硬开关和高达100KHz的谐振开关
| 型号： | IXGH60N60B2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching |
| 文件： | 总5页 (文件大小：579K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
HiPerFASTTM IGBT
VCES
IC25
= 600 V
= 75 A
IXGH 60N60B2
IXGT 60N60B2
VCE(sat) < 1.8 V
tfityp = 100 ns
Optimized for 10-25 kHz hard
switching and up to 100 KHz
resonant switching
TO-268
(IXGT)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
G
E
C (TAB)
VGES
VGEM
Continuous
Transient
20
30
V
V
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
75
60
300
A
A
A
TO-247 AD
(IXGH)
TAB)
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600 V
TC = 25°C
ICM = 150
A
G
C
E
500
W
G = Gate,
C = Collector,
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
E = Emitter,
TAB = Collector
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
Medium frequency IGBT
Square RBSOA
z
z
z
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
High current handling capability
MOS Gate turn-on
Weight
TO-247 AD
6
4
g
g
- drive simplicity
TO-268 SMD
Applications
z
PFC circuits
z
Uninterruptible power supplies (UPS)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
VGE(th)
ICES
IC = 250 µA, VCE = VGE
3.0
5.0
V
z
DC choppers
VCE = V
T = 25°C
50
µA
VGE = 0CVES
TJJ = 150°C
1
100
1.8
mA
nA
V
IGES
VCE = 0 V, VGE = 20 V
VCE(sat)
IC = 50 A, VGE = 15 V
Note 1.
TJ = 25°C
© 2003 IXYS All rights reserved
DS99113(11/03)
IXGH 60N60B2
IXGT 60N60B2
TO-247 AD Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
IC = 50 A; VCE = 10 V,
Note 1
40
58
S
∅ P
Cies
Coes
Cres
3900
290
100
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
170
25
57
nC
nC
nC
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
e
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
td(on)
tri
td(off)
tfi
28
30
ns
ns
A
Inductive load, TJ = 25°C
IC = 50 A, VGE = 15 V
b
160 270 ns
100 170 ns
1.0 2.5 mJ
b
b12
VCE = 400 V, RG = 3.3 Ω
C
D
E
.4
.8
Note 1
Eoff
20.80 21.46
15.75 16.26
td(on)
tri
Eon
td(off)
tfi
28
36
0.6
310
240
2.8
ns
ns
mJ
ns
ns
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Inductive load, TJ = 125°C
IC = 50 A, VGE = 15 V
L
.780 .800
.177
.140 .144
L1
∅P 3.55
Q
R
S
3.65
VCE = 400 V, RG = 3.3 Ω
5.89
4.32
6.15 BSC
6.40 0.232 0.252
5.49
.170 .216
242 BSC
Note 1
Eoff
mJ
RthJC
RthCK
0.25 K/W
K/W
TO-268 Outline
0.15
Notes:
1. Pulse test, t < 300µs wide, duty cycle < 2%.
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 60N60B2
IXGT 60N60B2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
350
300
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
VGE = 15V
VGE = 15V
9V
13V
11V
13V
11V
9V
7V
7V
5V
5V
5
0
0.5
0.5
5
1
1.5
2
2.5
3
0
-50
4
1
2
3
4
6
7
8
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE(sat) on
Temperature
100
90
80
70
60
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
9V
VGE = 15V
11V
IC = 100A
7V
IC = 50A
IC = 25A
5V
1
1.5
2
2.5
3
-25
0
25
50
75
100 125 150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
300
250
200
150
100
50
3.7
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
TJ = 25ºC
IC = 100A
50A
25A
TJ = 125ºC
TJ = 25ºC
-40ºC
0
5
6
7
8
9
10
6
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
VG E - Volts
© 2003 IXYS All rights reserved
IXGH 60N60B2
IXGT 60N60B2
Fig. 8. Dependence of Turn-Off
Energy on RG
Fig. 7. Transconductance
10
9
8
7
6
5
4
3
2
1
100
90
80
70
60
50
40
30
20
10
0
TJ = 125ºC
VGE = 15V
VCE = 400V
TJ = -40ºC
25ºC
125ºC
IC = 100A
IC = 50A
IC = 25A
0
20
0
50
100
150
200
250
300
0
5
10 15 20 25 30 35 40 45 50
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Turn-Off
Ene r gy on Ic
Fig. 10. Dependence of Turn-Off
Energy on Temperature
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
RG = 3.3Ω
VGE = 15V
VCE = 400V
RG = 3.3Ω
VGE = 15V
VCE = 400V
IC = 100A
IC = 50A
TJ = 125ºC
TJ = 25ºC
IC = 25A
30
40
50
60
70
80
90
100
25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Switching Time on RG
Fig. 12. Dependence of Turn-Off
Switching Time on Ic
1200
1100
1000
900
800
700
600
500
400
300
200
400
350
300
250
200
150
100
50
td(off)
td(off)
tfi - - - - - -
tfi - - - - - -
TJ = 125ºC
VGE = 15V
VCE = 400V
RG = 3.3Ω
VGE = 15V
VCE = 400V
TJ = 125ºC
IC = 25A
IC = 50A
TJ = 25ºC
IC = 100A
5
10 15 20 25 30 35 40 45 50
20
30
40
50
60
70
80
90
100
R G - Ohms
I C - Amperes
IXGH 60N60B2
IXGT 60N60B2
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
Fig. 14. Gate Charge
350
300
250
200
150
100
50
15
12
9
VCE = 300V
IC = 50A
IG = 10mA
td(off)
IC = 25A
50A
tfi - - - - - -
RG = 3.3Ω
VGE = 15V
VCE = 400V
100A
6
IC = 100A
50A
3
25A
0
25 35 45 55 65 75 85 95 105 115 125
0
20
40
60
80 100 120 140 160 180
TJ - Degrees Centigrade
Q G - nanoCoulombs
Fig. 15. Capacitance
10000
1000
100
f = 1 MHz
C
ies
C
oes
C
res
10
0
5
10
15
20
25
30
35
40
VC E - Volts
Fig. 16. Maximum Transient Thermal Resistance
0.275
0.25
0.225
0.2
0.175
0.15
0.125
0.1
0.075
0.05
1
10
100
1000
Pulse Width - milliseconds
© 2003 IXYS All rights reserved
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