IXGH6N170A [IXYS]

High Voltage IGBT; 高压IGBT


型号：	IXGH6N170A
厂家：	IXYS CORPORATION
描述：	High Voltage IGBT 高压IGBT 双极性晶体管高压
文件：	总2页 (文件大小：56K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Advance Technical Data

IXGH 6N170A

IXGT 6N170A

V_CES

I_C25

= 1700 V

6 A

High Voltage

IGBT

V_CE(sat)= 7.0 V

t_fi(typ)

32 ns

Symbol

TestConditions

Maximum Ratings

TO-268(IXGT)

V_CES

V_CGR

T_J= 25°C to 150°C

1700

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

C (TAB)

I_C25

I_C90

I_CM

T_C= 25°C

TO-247AD(IXGH)

T_C= 90°C

T_C= 25°C, 1 ms

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 33Ω

I_CM= 12

@ 0.8 V_CES

C (TAB)

Clamped inductive load

t_SC

P_C

T_J= 125°C, V_CE= 1200 V; V_GE= 15 V, R_G= 33Ω

T_C= 25°C

µs

G = Gate,

E=Emitter,

C = Collector,

TAB = Collector

T_J

-55 ... +150

150

°C

Features

^zInternational standard packages

JEDEC TO-268 and

T_JM

T_stg

-55 ... +150

JEDEC TO-247 AD

M_d

Mounting torque (M3)

(TO-247)

1.13/10Nm/lb.in.

300 °C

^zHigh current handling capability

^zMOS Gate turn-on

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

- drive simplicity

^zRugged NPT structure

^zMolding epoxies meet UL 94 V-0

flammability classification

Weight

TO-247

TO-268

Applications

^zCapacitor discharge & pulser circuits

^zAC motor speed control

^zDC servo and robot drives

^zDC choppers

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

^zUninterruptible power supplies (UPS)

^zSwitched-mode and resonant-mode

power supplies

BV_CES

V_GE(th)

I_C= 250 µA, V_GE= 0 V

I_C= 250 µA, V_CE= V_GE

1700

3.0

5.0

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

Note 1 T_J= 125°C

500

µA

Advantages

^zHigh power density

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= I_C90, V_GE= 15 V

100

7.0

^zSuitable for surface mounting

^zEasy to mount with 1 screw,

(isolated mounting screw hole)

V_CE(sat)

T_J= 25°C

T_J= 125°C

5.5

6.5

DS98990A(01/03)

IXGH 6N170A

IXGT 6N170A

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-247 AD Outline

I_C= I_C25; V_CE= 20 V

Note 2

3.5

∅ P

C_ies

C_oes

C_res

330

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

I_C= I_C90, V_GE= 15 V, V_CE= 0.5 V_CES

Q_G

3.6

Q_GE

Q_GC

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

t_d(on)

t_ri

t_d(off)

t_fi

Inductive load, T_J= 25°C

I_C= I_C25, V_GE= 15 V

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

220

450 ns

65 ns

R_G= 33 Ω, V_CE= 0.5 V_CES

.016 .031

.819 .845

.610 .640

E_off

0.19 0.40 mJ

20.80 21.46

15.75 16.26

5.20

5.72 0.205 0.225

19.81 20.32

4.50

.780 .800

.177

t_d(on)

t_ri

Inductive load, T_J= 125°C

I_C= I_C25, V_GE= 15 V

∅P 3.55

3.65

.140 .144

5.89

6.40 0.232 0.252

E_on

t_d(off)

0.7

230

4.32

5.49

.170 .216

242 BSC

6.15 BSC

R_G= 33 Ω, V_CE= 0.5 V_CES

t_fi

E_off

0.26

TO-268 Outline

R_thJC

R_thCK

1.65 K/W

K/W

(TO-247)

0.25

Notes:1. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A₁

A₂

4.9

2.7

.02

5.1

2.9

.25

.193 .201

.106 .114

.001 .010

b₂

1.15

1.9

1.45

2.1

.65

.045 .057

.75

.83

.016 .026

E₁

13.80 14.00

15.85 16.05

.543 .551

.624 .632

.524 .535

13.3

13.6

5.45 BSC

18.70 19.10

.215 BSC

.736 .752

.094 .106

2.40

2.70

1.20

1.40

.047 .055

1.00

0.25 BSC

3.80 4.10

1.15

.039 .045

.010 BSC

.150 .161

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

相关型号：