IXGH80N40B2 [IXYS]
Insulated Gate Bipolar Transistor, 80A I(C), 400V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IXGH80N40B2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 80A I(C), 400V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 局域网 电动机控制 栅 晶体管 |
| 文件： | 总5页 (文件大小：532K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
HiPerFASTTM IGBT
VCES
IC25
= 400 V
= 80 A
IXGH 80N40B2
VCE(sat) < 1.6 V
tfityp = 85 ns
Optimized for 10-30 KHz hard
switching and up to 300 KHz
resonant switching
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
(IXGH)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
400
400
V
V
TAB)
VGES
VGEM
Continuous
Transient
20
30
V
V
G
C
E
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
80
80
240
A
A
A
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 300 V
TC = 25°C
ICM = 100
A
Features
400
W
z
High current handling capability
MOS Gate turn-on
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
- drive simplicity
Applications
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
PFC circuits
z
Uninterruptible power supplies (UPS)
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
TO-247 AD
z
Switched-mode and resonant-mode
Weight
6
g
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th)
ICES
IC = 250 µA, VCE = VGE
3.0
5.0
V
VCE = V
T = 25°C
50
1
µA
VGE = 0CVES
TJJ = 150°C
mA
IGES
VCE = 0 V, VGE = 20 V
100
nA
VCE(sat)
I
= 40 A, VGE = 15 V
TJ = 25°C
1.6
2.5
V
V
ICC = 160 A, VGE = 15 V
© 2003 IXYS All rights reserved
DS99082(08/03)
IXGH 80N40B2
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = 40 A; VCE = 10 V,
40
62
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
∅ P
Cies
Coes
Cres
4100
280
67
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 40 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
Qg
Qge
Qgc
180
30
50
nC
nC
nC
e
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
td(on)
tri
td(off)
tfi
18
20
160
85
ns
ns
240 ns
170 ns
0.9 mJ
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
IC = 40 A, VGE = 15 V
VCE = 320 V, RG = Roff = 2 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
0.46
e
5.20
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
18
20
0.4
240
160
0.68
ns
ns
mJ
ns
ns
mJ
L
19.81 20.32
4.50
.780 .800
.177
L1
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
VCE = 320 V, RG = Roff = 2 Ω
∅P 3.55
Q
R
S
3.65
.140 .144
5.89
4.32
6.15 BSC
6.40 0.232 0.252
5.49
.170 .216
242 BSC
Eoff
RthJC
RthCK
0.31 K/W
K/W
(TO-247)
0.25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 80N40B2
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
320
280
240
200
160
120
80
80
70
60
50
40
30
20
10
0
VGE = 15V
13V
VGE = 15V
13V
11V
11V
9V
9V
7V
7V
5V
40
5V
0
0.5
0.5
5
0.75
1
1.25
VC E - Volts
1.5
1.75
2
2.25
0
1
2
3
4
5
6
7
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE(sat) on
Temperature
80
70
60
50
40
30
20
10
0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGE = 15V
13V
VGE = 15V
IC = 80A
11V
9V
7V
5V
IC = 40A
IC = 20A
0.75
1
1.25
VCE - Volts
1.5
1.75
2
2.25
-50
-25
0
25
50
75
100 125 150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
Fig. 6. Input Admittance
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
120
100
80
60
40
20
0
TJ = 25ºC
TJ = 125ºC
25ºC
-40ºC
IC = 80A
40A
20A
6
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
4
4.5
5
5.5
6
6.5
7
7.5
VG E - Volts
© 2003 IXYS All rights reserved
IXGH 80N40B2
Fig. 7. Transconductance
Fig. 8. Dependence of E on RG
off
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
90
80
70
60
50
40
30
20
10
0
TJ = 125ºC
VGE = 15V
VCE = 320V
IC = 80A
TJ = -40ºC
25ºC
125ºC
IC = 40A
IC = 20A
0
20
0
10
20
30
40
50
60
70
80
90
1
2
3
4
5
6
7
8
9
10
I C - Amperes
R G - Ohms
Fig. 10. Dependence of E on
off
Fig. 9. Dependence of Eoff on Ic
Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
RG = 3.3Ω
RG = 3.3Ω
RG= 10Ω
VGE = 15V
VCE = 320V
RG = 10Ω
VGE = 15V
VCE = 320V
- - -
- - -
IC = 80A
TJ = 125ºC
IC = 40A
IC = 20A
TJ = 25ºC
30
40
50
60
70
80
25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
TJ - Degrees Centigrade
Fig. 12. Capacitance
Fig. 11. Gate Charge
15
12
9
10000
1000
100
f = 1 MHz
VCE = 200V
IC = 40A
IG = 10mA
C
ies
C
oes
6
3
C
res
0
10
20
40
60
80 100 120 140 160 180
0
5
10
15
20
25
30
35
40
VC E - Volts
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 80N40B2
Fig. 13. Maximum Transient Thermal Resistance
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
1
10
100
1000
Pulse Width - milliseconds
© 2003 IXYS All rights reserved
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