IXGH90N60B3 [IXYS]
GenX3 600V IGBT; GenX3 600V IGBT
| 型号： | IXGH90N60B3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 600V IGBT |
| 文件： | 总6页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
GenX3TM 600V IGBT
VCES
IC110
= 600V
= 90A
IXGH90N60B3
VCE(sat)
tfi(typ)
≤£ 1.8V
= 148ns
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
TO-247 AD (IXGH)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC110
ICM
TC = 25°C (Limited by leads)
TC = 110°C (Chip capability)
TC = 25°C, 1ms
75
90
A
A
A
C (TAB)
500
SSOA
VGE = 15V, TVJ = 125°C, RG = 2Ω
ICM = 180
A
G = Gate
E = Emitter
C
= Collector
(RBSOA)
Clamped inductive load @ VCE ≤ 600V
TAB = Collector
PC
TC = 25°C
660
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
Md
Mounting torque
1.13 / 10
Nm/lb.in.
z Optimized for low conduction and
switching losses
TL
TSOLD
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
300
260
°C
°C
z Square RBSOA
z International standard package
Weight
6
g
Advantages
z High power density
z Low gate drive requirement
Applications
Symbol
Test Conditions
Characteristic Values
z Power Inverters
z UPS
z Motor Drives
z SMPS
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
600
3.0
V
V
5.0
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
ICES
VCE = VCES
VGE = 0V
75
750
μA
μA
TJ = 125°C
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
±100
nA
VCE(sat)
IC = 90A, VGE = 15V, Note 1
1.55
1.62
1.80
V
V
DS99994(05/08)
© 2008 IXYS CORPORATION, All rights reserved
IXGH90N60B3
Symbol
Test Conditions
Characteristic Values
TO-247 AD Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
55
90
S
Cies
Coes
Cres
8285
525
pF
pF
pF
∅ P
140
Qg
172
28
nC
nC
nC
Qge
Qgc
IC = 90A, VGE = 15V, VCE = 0.5 • VCES
63
e
td(on)
tri
31
47
ns
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Inductive load, TJ = 25°C
IC = 60A, VGE = 15V
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Eon
td(off)
tfi
1.32
150
148
1.37
mJ
ns
VCE = 480V, RG = 2Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
250
ns
Eoff
2.40
mJ
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
td(on)
tri
29
43
ns
ns
20.80 21.46
15.75 16.26
Inductive load, TJ = 125°C
IC = 60A,VGE = 15V
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Eon
td(off)
tfi
1.93
220
253
2.80
mJ
ns
.780 .800
.177
VCE = 480V,RG = 2Ω
∅P 3.55
Q
3.65
.140 .144
ns
5.89
6.40 0.232 0.252
Eoff
mJ
R
4.32
5.49 .170 .216
RthJC
RthCS
0.19 °C/W
°C/W
0.21
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGH90N60B3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
180
160
140
120
100
80
350
300
250
200
150
100
50
VGE = 15V
13V
11V
VGE = 15V
11V
9V
9V
7V
60
7V
5V
40
20
5V
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VCE - Volts
0
1
2
3
4
5
6
7
8
9
10
150
7.5
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
180
160
140
120
100
80
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGE = 15V
13V
11V
VGE = 15V
I C = 180A
9V
7V
I C = 90A
60
40
I C = 45A
5V
20
0
-50
-25
0
25
50
75
100
125
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
160
140
120
100
80
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
TJ = 150ºC
25ºC
- 40ºC
I C = 180A
90A
45A
60
40
20
0
5
6
7
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGE - Volts
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGH90N60B3
Fig. 7. Transconductance
Fig. 8. Gate Charge
140
120
100
80
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I
I
C = 90A
G = 10 mA
25ºC
125ºC
60
6
40
4
20
2
0
0
0
20
40
60
80
100
120
140
160
180
0
20
40
60
80
100
120
140
160
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
100,000
10,000
1,000
100
200
180
160
140
120
100
80
= 1 MHz
f
C
ies
C
oes
60
TJ = 125ºC
C
40
res
RG = 2Ω
dV / dt < 10V / ns
20
0
10
200
250
300
350
400
450
500
550
600
650
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH90N60B3
Fig. 12. Inductive Switching
Fig. 13. Inductive Switching
Energy Loss vs. Gate Resistance
Energy Loss vs. Collector Current
8
7
6
5
4
3
2
1
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
E
E
on - - - -
off
RG = 2
E
E
on - - - -
off
VGE = 15V
Ω ,
VCE = 480V
TJ = 125ºC , VGE = 15V
VCE = 480V
I C = 90A
TJ = 125ºC
I C = 60A
TJ = 25ºC
70
30
40
50
60
80
90
2
3
4
5
6
7
8
9
10 11 12 13 14 15
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
300
290
280
270
260
250
240
700
8
7
6
5
4
3
2
1
0
4.5
t f
t
d(off) - - - -
V
E
E
on - - - -
off
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
600
500
400
300
200
100
TJ = 125ºC, GE = 15V
RG = 2Ω VGE = 15V
,
CE = 480V
V
VCE = 480V
I C = 90A
I C = 90A
I C = 60A
I C = 60A
2
3
4
5
6
7
8
9
10 11 12 13 14 15
25
35
45
55
65
75
85
95
105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
450
400
350
300
250
200
150
100
50
300
280
260
240
220
200
180
160
140
120
320
300
280
260
240
220
200
180
160
140
120
230
220
210
200
190
180
170
160
150
140
130
t f
t
d(off) - - - -
t f
td(off)
- - - -
RG = 2Ω , VGE = 15V
RG = 2Ω , VGE = 15V
VCE = 480V
VCE = 480V
I C = 90A, 60A
TJ = 125ºC
TJ = 25ºC
0
25
35
45
55
65
75
85
95 105 115 125
30
40
50
60
70
80
90
TJ - Degrees Centigrade
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGH90N60B3
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
90
80
70
60
50
40
30
20
10
0
34
33
32
31
30
29
28
27
26
25
130
120
110
100
90
100
90
80
70
60
50
40
30
20
10
0
tr
td(on)
- - - -
tr
td(on) - - - -
TJ = 125ºC, VGE = 15V
RG = 2Ω , VGE = 15V
VCE = 480V
VCE = 480V
I C = 90A
TJ = 25ºC
80
I C = 60A
70
60
TJ = 125ºC
50
40
30
2
3
4
5
6
7
8
9
10 11 12 13 14 15
30 35 40 45 50 55 60 65 70 75 80 85 90
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
120
100
80
60
40
20
0
34
33
32
31
30
29
28
t r
t
d(on) - - - -
RG = 2Ω , VGE = 15V
VCE = 480V
I C = 90A
I C = 60A
25
35
45
55
65
75
85
95 105 115 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_90N60B3(85) 4-24-08
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