IXGN200N60 [IXYS]
HiPerFAST IGBT; HiPerFAST IGBT
| 型号： | IXGN200N60 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT |
| 文件： | 总4页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
VCES
IC25 VCE(sat)
IXGN 200N60
IXGN 200N60A
600V 200 A 2.5V
600V 200 A 2.7V
E
Symbol
TestConditions
MaximumRatings
SOT-227B, miniBLOC
E
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
G
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
IC25
IC90
ICM
TC = 25°C
200
100
300
A
A
A
C
TC = 90°C
TC = 25°C, 1 ms
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
ICM = 100
@ 0.8 VCES
A
PC
TC = 25°C
600
W
TJ
-55 ... +150
150
°C
°C
°C
Features
Internationalstandardpackage
TJM
Tstg
●
miniBLOC(ISOTOPcompatible)
Aluminiumnitrideisolation
-55 ... +150
●
VISOL
50/60 Hz
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
- highpowerdissipation
Isolation voltage 3000 V~
Very high current, fast switching IGBT
Low VCE(sat)
●
●
Md
Mountingtorque
Terminalconnectiontorque(M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
●
- forminimumon-stateconduction
losses
MOS Gate turn-on
Weight
30
g
●
- drive simplicity
Low collector-to-case capacitance
●
(< 50 pF)
Low package inductance (< 5 nH)
●
- easy to drive and to protect
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptiblepowersupplies(UPS)
Switch-modeandresonant-mode
powersupplies
●
●
BVCES
VGE(th)
IC = 250 mA, VGE = 0 V
600
2.5
V
●
IC = 10 mA, VCE = VGE
6
V
●
●
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200
2
mA
mA
IGES
VCE = 0 V, VGE = ±20 V
±400
nA
Advantages
●
Easy to mount with 2 screws
Space savings
VCE(sat)
IC = IC90, VGE = 15 V
200N60
200N60A
2.5
2.7
V
V
●
●
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92776I(1/98)
1 - 4
IXGN200N60
IXGN200N60A
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
miniBLOC, SOT-227 B
min. typ.
max.
IC = 60 A; VCE = 10 V,
40
57
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
9000
600
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
305
Qg
465
52
nC
nC
nC
M4 screws (4x) supplied
Qge
Qgc
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
Max.
228
A
B
7.80
8.20 0.307 0.323
td(on)
tri
100
100
2.4
ns
ns
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
Inductive load, TJ = 25°C
E
F
4.09
4.29 0.161 0.169
14.91 15.11 0.587 0.595
Eon
td(off)
mJ
IC = IC90, VGE = 15 V, L = 30 mH,
VCE = 0.8 VCES, RG = Roff = 2.4 W
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
200N60
200N60A
200N60
800 1100 ns
J
K
11.68 12.22 0.460 0.481
8.92
700
350
200
950 ns
500 ns
280 ns
mJ
Remarks: Switching times
may increase for
9.60 0.351 0.378
L
M
0.76
0.84 0.030 0.033
tfi
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
1.98
VCE (Clamp) > 0.8 • VCES
,
200N60A
N
O
higher TJ or increased RG
2.13 0.078 0.084
Eoff
200N60 14.4
P
4.95
5.97 0.195 0.235
Q
26.54 26.90 1.045 1.059
200N60A
9.6
mJ
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
td(on)
tri
100
200
4.8
ns
ns
Inductive load, TJ = 125°C (IXGN 200N60A)
IC = IC90, VGE = 15 V, L = 30 mH
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
Eon
td(off)
tfi
mJ
ns
VCE = 0.8 VCES, RG = Roff = 2.4 W
780
250
14.4
Remarks: Switching times
ns
may increase for VCE (Clamp) > 0.8 • VCES
,
higher TJ or increased RG
Eoff
mJ
RthJC
RthCK
0.21 K/W
K/W
0.05
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGN200N60
IXGN200N60A
400
200
160
120
80
TJ = 25°C
VGE = 15V
TJ = 25°C
VGE = 15V
13V
13V
11V
320
240
160
80
11V
9V
9V
7V
40
7V
5V
0
0
0
2
4
6
8
10
0
1
2
3
4
5
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
200
Fig. 2. Extended Output Characteristics
1.4
VGE = 15V
TJ = 125°C
VGE = 15V
13V
11V
1.2
160
IC = 200A
9V
1.0
120
IC = 100A
0.8
0.6
0.4
80
40
0
7V
5V
25
50
75
100
125
150
0
1
2
3
4
5
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
160
VCE = 10V
f = 1Mhz
10000
1000
100
120
80
40
0
C
iss
C
TJ =125°C
oss
C
rss
TJ = 25°C
0
2
4
6
8
10
12
14
0
5
10 15 20 25 30 35 40
VCE-Volts
VGE - Volts
Fig. 6. Temperature Dependence of
BVCES & VGE(th)
Fig. 5. Turn-off Safe Operating Area
© 2000 IXYS All rights reserved
3 - 4
IXGN200N60
IXGN200N60A
20
30
20
16
12
8
10
8
E(OFF)
TJ = 125°C
TJ = 125°C
RG = 4.7
IC = 200A
16
12
24
18
12
6
E(OFF)
6
E(OFF)
E(ON)
E(ON)
IC = 100A
IC = 50A
8
4
E(OFF)
E(ON)
E(ON)
4
0
4
2
0
250
0
60
0
0
50
100
IC - Amperes
Fig. 7. Dependence of tfi and EOFF on IC.
150
200
0
10
20
30
40
50
RG - Ohms
Fig. 8. Dependence of tfi and EOFF on RG.
400
18
15
12
9
VCE = 300V
IC = 50A
100
10
1
TJ = 125°C
RG = 4.7
dV/dt < 5V/ns
6
3
0.1
0
0
100
200
300
400
500
600
0
100
200
300
400
500
600
VCE - Volts
Qg - nanocoulombs
Fig. 9. Gate Charge
Fig. 10. Junction Capacitance Curves
1
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4 - 4
相关型号：
IXGN200N60A2
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4
IXYS
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