IXGP12N60BD1 [IXYS]

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB,;


型号：	IXGP12N60BD1
厂家：	IXYS CORPORATION
描述：	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, 局域网电动机控制栅晶体管
文件：	总2页 (文件大小：68K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFAST^TMIGBT

IXGA 12N60BD1 V

IXGP 12N60BD1 I

= 600 V

= 24 A

CES

C25

= 2.1 V

= 120 ns

CE(sat)

fi(typ)

Symbol

TestConditions

Maximum Ratings

TO-220AB(IXGP)

V_CES

V_CGR

= 25°C to 150°C

600

= 25°C to 150°C; R = 1 MΩ

C (TAB)

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

= 25°C

= 90°C

TO-263AA(IXGA)

= 25°C, 1 ms

SSOA

= 15 V, T = 125°C, R = 33 Ω

24A

(RBSOA)

Clamped inductive load, L = 300 µH

= 25°C

@ 0.8 V

CES

C (TAB)

P_C

100

T_J

-55 ... +150

150

°C

T_JM

T_stg

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

-55 ... +150

M_d

Mounting torque with screw M3

Mounting torque with screw M3.5

0.45/4 Nm/lb.in.

0.55/5 Nm/lb.in.

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Features

Moderate frequency IGBT and anti-

parallel FRED in one package

New generation HDMOS process

Weight

International standard package

JEDEC TO-220AB and TO-263AA

High peak current handling capability

Symbol

TestConditions

Characteristic Values

(T = 25°C, unless otherwise specified)

Applications

min. typ. max.

PFC circuit

AC motor speed control

DC servo and robot drives

Switch-mode and resonant-mode

power supplies

BV_CES

V_GE(th)

= 250 µA, V = 0 V

600

2.5

= 250 µA, V = V

5.0

I_CES

= 0.8 V

= 0 V

T = 25°C

200 µA

1.5 mA

CES

T = 125°C

I_GES

= 0 V, V = ±20 V

±100 nA

V_CE(sat)

= I , V = 15 V

2.1

CE90

98601 (3/99)

IXGA 12N60BD1

IXGP 12N60BD1

Symbol

g_fs

TestConditions

Characteristic Values

(T = 25°C, unless otherwise specified)

TO-220 AB Outline

min. typ. max.

= I ; V = 10 V,

C90

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C_ies

C_oes

C_res

860

100

= 25 V, V = 0 V, f = 1 MHz

Q_g

Pins:

1 - Gate

Q_ge

Q_gc

I = I , V = 15 V, V = 0.5 V

C C90 GE CE CES

2 - Collector 3 - Emitter

4 - Collector Bottom Side

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

t_d(on)

t_ri

t_d(off)

t_fi

Inductive load, T_J= 25°C

12.70 13.97 0.500 0.550

14.73 16.00 0.580 0.630

I = I , V = 15 V, L = 300 µH

C90

= 0.8 V , R = R = 18 Ω

9.91 10.66 0.390 0.420

4.08 0.139 0.161

CES

off

150 250

120 270

3.54

Remarks: Switching times may increase

for V (Clamp) > 0.8 V , higher T or

increased R

5.85

2.54

6.85 0.230 0.270

3.18 0.100 0.125

CES

E_off

0.5

0.8 mJ

1.15

2.79

1.65 0.045 0.065

5.84 0.110 0.230

t_d(on)

t_ri

0.64

2.54

1.01 0.025 0.040

BSC

Inductive load, T_J= 125°C

BSC 0.100

I = I , V = 15 V, L = 300 µH

4.32

1.14

4.82 0.170 0.190

1.39 0.045 0.055

C90

E_on

t_d(off)

t_fi

0.15

200

0.8

= 0.8 V , R = R = 18 Ω

CES

off

0.35

2.29

0.56 0.014 0.022

2.79 0.090 0.110

Remarks: Switching times may increase

for V (Clamp) > 0.8 V , higher T or

increased R

CES

E_off

TO-263 AA Outline

R_thJC

R_thCK

IGBT

1.25 K/W

K/W

0.25

ReverseDiode(FRED)

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Symbol

V_F

TestConditions

min. typ. max.

I_F= 15A; T_VJ= 150°C

1.3

T_VJ

25°C

2.5

I_RM

V_R= 100 V; I_F=25A; -di_F/dt = 100 A/µs

L < 0.05 µH; T_VJ= 100°C

1. Gate

2. Collector

3. Emitter

4. Collector

BottonSide

t_rr

I_F= 1 A; -di/dt = 50 A/µs;

V_R= 30 V T_J= 25°C

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

R_thJC

Diode

1.6 K/W

4.06

2.03

4.83

2.79

.160

.080

.190

.110

0.51

1.14

0.99

1.40

.020

.045

.039

.055

Min.RecommendedFootprint

(Dimensions in inches and mm)

0.46

1.14

0.74

1.40

.018.029

.045

.055

8.64

7.11

9.65

8.13

.340

.280

.380

.320

9.65

6.86

2.54

10.29

8.13

.380

.270

.405

.320

BSC

.100

BSC

14.61

2.29

1.02

1.27

15.88

2.79

.575

.090

.040

.625

.110

.055

1.40

1.78.050

0.380

.070

.015

.018.029

0.46

0.74

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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