关闭背景特效

IXGP50N60B4 [IXYS]

High-Gain IGBTs; 高增益的IGBT

IXGP50N60B4


元器件型号：	IXGP50N60B4
生产厂家：	IXYS CORPORATION
描述和应用：	High-Gain IGBTs 高增益的IGBT 双极性晶体管
PDF文件：	总6页 (文件大小：220K)
下载文档：	下载PDF数据表文档文件
型号参数：IXGP50N60B4参数

IXGP50N60C4

High-Gain IGBTs

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10 IXYS

IXGP7N60B

HiPerFAST IGBT

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13 IXYS

IXGP7N60B

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB

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16 ETC

IXGP7N60BD1

HiPerFAST IGBT with Diode

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10 IXYS

IXGP7N60C

HiPerFAST IGBT Lightspeed Series

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11 IXYS

IXGP7N60C

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB

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15 ETC

IXGP7N60CD1

HiPerFAST IGBT with Diode Lightspeed Series

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10 IXYS

IXGP8N100

IXGA8N100

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41 IXYS

IXGQ100N100Y3

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 100A I(C)

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14 ETC

IXGQ100N50Y4

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 500V V(BR)CES | 100A I(C)

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10 ETC

IXGQ100N60Y4

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)

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16 ETC

IXGQ150N100Y3

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)

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13 ETC

IXGQ150N100Y4

Transistor

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0 IXYS

IXGQ150N33TC

Insulated Gate Bipolar Transistor, 150A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 PIN

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0 IXYS

IXGQ150N33TCD1

Insulated Gate Bipolar Transistor, 150A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 PIN

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0 IXYS

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