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IXGR24N60CD1

更新时间：2024-09-18 18:21:02
品牌：IXYS
描述：Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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IXGR24N60CD1 概述

Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN IGBT晶体管 IGBT

IXGR24N60CD1 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：ISOPLUS
包装说明：ISOPLUS247, 3 PIN针数：3
Reach Compliance Code：compliant风险等级：5.84
外壳连接：ISOLATED最大集电极电流 (IC)：42 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
JESD-30 代码：R-PSIP-T3JESD-609代码：e1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：240 ns
标称接通时间 (ton)：40 nsBase Number Matches：1

IXGR24N60CD1 数据手册

通过下载IXGR24N60CD1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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HiPerFASTTM IGBT  
withDiode  
IXGR 24N60CD1 VCES = 600 V  
IC25 = 42 A  
ISOPLUS247TM  
VCE(sat)= 2.5 V  
(Electrically Isolated Back Surface)  
Preliminary data sheet  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS 247  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
TC = 25°C  
42  
22  
80  
A
A
A
Isolated back surface*  
TC = 90°C  
TC = 25°C, 1 ms  
G = Gate,  
E=Emitter  
C = Collector  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 22 Ω  
Clamped inductive load, L = 100 µH  
ICM = 48  
@ 0.8 VCES  
A
* Patent pending  
PC  
TC = 25°C  
80  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
! Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
VISOL  
2500  
6
V
g
! Low drain to tab capacitance(<35pF)  
! Low RDS (on) HDMOSTM process  
! Rugged polysilicon gate cell structure  
! Unclamped Inductive Switching (UIS)  
rated  
Weight  
Symbol  
TO-247  
! Fast intrinsic rectifier  
! Low gate charge process  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
!
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
!
!
BVCES  
VGE(th)  
IC = 750 µA, VGE = 0 V  
IC = 250 µA, VGE = VGE  
600  
2.5  
V
V
power supplies  
DC choppers  
! AC motor control  
5.5  
!
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 µA  
mA  
3
Advantages  
!
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.5  
Easy assembly  
Space savings  
!
VCE(sat)  
IC = IT, VGE = 15 V  
2.1  
V
!
High power density  
© 1999 IXYS All rights reserved  
98667 (11/99)  
IXGR 24N60CD1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247OUTLINE  
IC = IT; VCE = 10 V,  
9
17  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
1500  
170  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IT, VGE = 15 V, VCE = 0.5 VCES  
Qg  
55  
13  
17  
nC  
nC  
nC  
Qge  
Qgc  
td(on)  
tri  
td(off)  
tfi  
15  
25  
ns  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
4 no connection  
IC = IT, VGE = 15 V, L = 300 µH  
VCE = 0.8 • VCES, RG = Roff = 18 Ω  
75 140  
60 110  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
Dim.  
Millimeter  
Inches  
Min. Max. Min. Max.  
Eoff  
0.24 0.36 mJ  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
td(on)  
tri  
15  
25  
ns  
ns  
Inductive load, TJ = 125°C  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
IC = IT, VGE = 15 V, L = 300 µH  
Eon  
td(off)  
tfi  
1
mJ  
ns  
VCE = 0.8 • VCES, RG = Roff = 18 Ω  
C
D
E
0.61  
0.80  
20.80 21.34  
15.75 16.13  
.024 .031  
.819 .840  
.620 .635  
130  
110  
0.6  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
ns  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Eoff  
mJ  
3.81  
4.32  
RthJC  
RthCK  
0.157 K/W  
K/W  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
0.15  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IT, VGE = 0 V,  
TJ = 150°C  
1.6  
2.5  
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25°C  
IRM  
trr  
IF = IT, VGE = 0 V, -diF/dt = 100 A/µs  
VR = 100 V  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
6
A
ns  
ns  
TJ = 100°C 100  
TJ = 25°C 25  
RthJC  
1.65 K/W  
Notes: 1. IT = 24A  
2. See IXGH24N60CD1 data sheet for characteristic curves.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  

IXGR24N60CD1 替代型号

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