IXGR32N60CD1 [IXYS]
HiPerFAST IGBT with Diode ISOPLUS247; HiPerFAST IGBT与二极管ISOPLUS247
| 型号： | IXGR32N60CD1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT with Diode ISOPLUS247 |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
with Diode
IXGR 32N60CD1 VCES
IC25
= 600 V
= 45 A
VCE(SAT)typ = 2.1 V
= 55 ns
ISOPLUS247TM
tfi(typ)
(Electrically Isolated Backside)
ISOPLUS 247TM (IXGR)
E153432
Symbol
TestConditions
MaximumRatings
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
45
28
A
A
A
Isolated backside*
TC = 90°C
TC = 25°C, 1 ms
120
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
ICM = 64
@ 0.8 VCES
A
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
PC
TC = 25°C
140
W
*Patentpending
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
MaximumLeadandTabtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
• DCBIsolatedmountingtab
• Meets TO-247AD package Outline
• Highcurrenthandlingcapability
• Latest generation HDMOSTM process
• MOS Gate turn-on
VISOL
50/60 Hz, RMS
t = 1 min leads-to housing
2500
5
V~
g
Weight
- drive simplicity
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
BVCES
VGE(th)
IC = 250mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
V
5.0
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200
3
mA
mA
Advantages
• Easy assembly
• High power density
• Very fast switching speeds for high
frequencyapplications
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
VCE(sat)
IC = IT, VGE = 15 V
Note 1
2.1
2.5
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98631B(7/00)
1 - 5
IXGR 32N60CD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS 247 (IXGR) OUTLINE
IC = IT; VCE = 10 V,
25
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
2700
240
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
110
22
nC
nC
nC
Qge
Qgc
IC = IT, VGE = 15 V, VCE = 0.5 VCES
40
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
25
20
ns
ns
ns
ns
mJ
IC = IT, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
85
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
55
Dim.
Millimeter
Inches
,
Min. Max. Min. Max.
Eoff
0.32
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
td(on)
tri
25
25
ns
ns
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
Eon
td(off)
tfi
1
mJ
C
D
E
0.61
0.80
20.80 21.34
15.75 16.13
.024 .031
.819 .840
.620 .635
110
100
170 ns
160 ns
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Eoff
0.85
1.25 mJ
3.81
4.32
RthJC
RthCK
0.90 K/W
K/W
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
0.15
S
T
U
13.21 13.72
15.75 16.26
1.65
.520 .540
.620 .640
.065 .080
3.03
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
IF = IT, VGE = 0 V, Pulse test
min. typ. max.
TJ = 150°C
TJ = 25°C
1.6
2.5
V
V
t
£ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = IT, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C
6
A
ns
ns
TJ = 100°C 100
25
RthJC
1.15 K/W
Note: 1. IT = 32A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 5
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGR 32N60CD1
200
160
120
80
100
80
60
40
20
0
TJ = 25°C
VGE = 15V
VGE = 15V
13V
TJ = 25°C
9V
11V
13V
11V
9V
7V
5V
7V
40
5V
0
0
2
4
6
8
10
0
1
2
3
4
5
VCE - Volts
VCE - Volts
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
100
80
60
40
20
0
1.50
1.25
1.00
0.75
0.50
11V
TJ = 125°C
VGE = 15V
13V
VGE = 15V
9V
I
C = 64A
IC = 32A
IC = 16A
7V
5V
0
1
2
3
4
5
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 4. Temperature Dependence of VCE(sat)
Fig. 3. High Temperature Output Characteristics
100
80
60
40
20
0
10000
V
CE = 10V
f = 1Mhz
C
iss
1000
100
10
C
oss
C
rss
TJ = 125°C
TJ = 25°C
3
4
5
6
7
8
9
10
0
5
10 15 20 25 30 35 40
VCE-Volts
VGE - Volts
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
© 2000 IXYS All rights reserved
3 - 5
IXGR 32N60CD1
4
3
2
1
0
8
1.00
0.75
0.50
0.25
0.00
4
3
2
1
0
TJ = 125°C
TJ = 125°C
RG = 10
E(OFF)
IC = 64A
6
E(ON)
E(OFF)
E(ON)
4
E(ON)
E(OFF)
IC = 32A
IC = 16A
2
E(ON)
E(OFF)
0
60
0
10
20
30
40
50
0
20
40
IC - Amperes
60
80
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
Fig. 8. Dependence of EON and EOFF on RG.
16
100
64
IC = 32A
VCE = 300V
12
8
TJ = 125°C
RG = 4.7
10
1
dV/dt < 5V/ns
4
0
0.1
0
25
50
75
100
125
0
100
200
300
400
500
600
VCE - Volts
Qg - nanocoulombs
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
1
D=0.5
D=0.2
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
0.1
1
10
Fig. 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4 - 5
IXGR 32N60CD1
60
A
1000
nC
30
A
TVJ=100°C
VR = 300V
TVJ=100°C
VR = 300V
50
40
30
20
10
0
25
800
IF= 60A
IF= 30A
IF= 15A
IF= 60A
IF= 30A
IF= 15A
IRM
Qr
IF
20
15
10
5
600
400
200
0
TVJ=150°C
TVJ=100°C
TVJ=25°C
0
A/ s
-diF/dt
0
1
2
3 V
VF
100
1000
0
200 400 600 1000
A/ s
-diF/dt
Fig.12. Forward current IF versus VF
2.0
Fig. 13. Reverse recovery charge Qr
versus -diF/dt
Fig. 14.Peak reverse current IRM
versus -diF/dt
90
20
1.00
TVJ=100°C
TVJ=100°C
IF = 30A
VR = 300V
V
µs
ns
VFR
tfr
VFR
trr
1.5
Kf
15
10
5
0.75
0.50
0.25
0.
tfr
80
70
60
IF= 60A
IF= 30A
IF= 15A
1.0
IRM
0.5
Qr
0.0
0
A/ s
0
40
80
120
160
0
200 400 600 1000
A/ s
0
200 400 600 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 17.Peak forward voltage VFR and tfr
versus diF/dt
Fig. 15. Dynamic parameters Qr, IRM
versus TVJ
Fig. 16.Recovery time trr versus -diF/dt
10
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
1
2
3
4
0.436
0.482
0.117
0.115
0.0055
0.0092
0.0007
0.0418
ZthJC
0.1
0.01
0.001
0.0001
DSEP 2x31-06B
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 18. Transient thermal resistance junction to case
© 2000 IXYS All rights reserved
5 - 5
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