IXGR50N60BD1 [IXYS]
HiPerFAST IGBT ISOPLUS247; HiPerFAST IGBT ISOPLUS247
| 型号： | IXGR50N60BD1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT ISOPLUS247 |
| 文件： | 总5页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
ISOPLUS247TM
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.5 V
tfi(typ) = 85 ns
IXGR 50N60B
IXGR 50N60BD1
(Electrically Isolated Back Surface)
(D1)
Symbol
TestConditions
Maximum Ratings
ISOPLUS 247
E153432
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
20
30
V
V
G
C
E
Isolated Backside*
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
75
45
200
A
A
A
G = Gate,
E=Emitter
C = Collector
SSOA
V
= 15 V, T = 125°C, RG = 10 Ω
I
= 100
A
(RBSOA)
CGlaE mped indVuJctive load, L = 100 µH
TC = 25°C
@C0M.8 VCES
250
* Patent pending
PC
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
z
z
z
z
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
VISOL
50/60 Hz, RMS, t = 1minute leads-to-tab
2500
5
V
g
- drive simplicity
Weight
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
VGE(th)
ICES
I
= 250 µA, VCE = VGE
50N60B
2.5
5.0
5.0
V
V
ICC = 500 µA
50N60BD1 2.5
z
AC motor speed control
z
DC servo and robot drives
VCE = 600V
VGE = 0 V
50N60B
200 µA
650 µA
z
DC choppers
50N60BD1
50N60B
TJ = 125°C
1
5
mA
mA
50N60BD1
Advantages
z
IGES
VCE = 0 V, VGE = 20 V
100 nA
2.5
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
z
VCE(sat)
IC = IT, VGE = 15 V
V
z
© 2004 IXYS All rights reserved
DS98730C(06/04)
IXGR 50N60B
IXGR 50N60BD1
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
gfs
IC = I ; V = 10 V,
25
35
S
PulseTtesCt,E t ≤ 300 µs, duty cycle ≤ 2 %
Cies
4100
pF
pF
pF
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
300
50
pF
Qg
110
30
nC
nC
nC
Qge
Qgc
IC = IT, VGE = 15 V, VCE = 0.5 VCES
35
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
td(on)
tri
td(off)
tfi
50
50
ns
ns
ns
ns
Inductive load, TJ = 25°C
4 no connection
IC = I , V = 15 V, L = 100uH
VCE =T0.8G•EVCES, RG = Roff = 2.7 Ω
Dim.
Millimeter
Inches
110 270
85 150
Min.
Max. Min. Max.
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
A
4.83
2.29
1.91
1.14
1.91
2.92
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
A
,
A12
Eoff
3.0
4.0
mJ
b
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
b
b12
Inductive load, TJ = 125°C
td(on)
tri
50
60
ns
ns
mJ
ns
ns
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
IC = IT, VGE = 15 V, L = 100uH
VCE = 0.8 • VCES, RG = Roff = 2.7 Ω
20.80 21.34
15.75 16.13
Eon
td(off)
tfi
3
e
5.45 BSC
.215 BSC
.780 .800
.150 .170
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
200
250
L
19.81 20.32
,
L1
3.81
4.32
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
Eoff
4.2
mJ
RthJC
RthCK
0.5 K/W
K/W
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = I , VGE = 0 V,
T = 150°C
1.6
2.5
V
V
PulseTtest, t ≤ 300 ms, duty cycJle ≤ 2 %
IRM
IF = IT, V = 0 V, -diF/dt = 100 A/ms,TJ = 100°C 3.2
A
ns
ns
VR = 100 GVE
trr
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35
RthJC
0.85 K/W
Note: IT,= 50A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
IXGR 50N60B
IXGR 50N60BD1
100
80
60
40
20
0
200
160
120
80
V
GE = 15V
TJ = 25°C
TJ = 25°C
11V
9V
VGE = 15V
13V
11V
9V
13V
7V
5V
7V
5V
40
0
0
1
2
3
4
5
0
2
4
6
8
10
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
VCE - Volts
Fig. 2. Extended Output Characteristics
100
80
60
40
20
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
TJ = 125°C
VGE = 15V
VGE = 15V
9V
I
C = 100A
13V
11V
7V
5V
IC = 50A
IC = 25A
0
1
2
3
4
5
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
10000
1000
100
100
80
60
40
20
0
f = 1Mhz
V
CE = 10V
C
iss
C
C
oss
rss
TJ = 25°C
TJ = 125°C
10
0
5
10 15 20 25 30 35 40
0
2
4
6
8
10
VGE - Volts
VCE-Volts
Fig. 6. JunctionCapacitanceCurves
Fig. 5. Saturation Voltage Characteristics
© 2004 IXYS All rights reserved
IXGR 50N60B
IXGR 50N60BD1
12
10
8
6
5
4
3
2
1
0
6
5
4
3
2
1
0
12
TJ = 125°C
TJ = 125°C
E(ON)
RG = 4.7Ω
10
E(ON)
IC = 100A
E(OFF)
8
6
4
2
0
E(OFF)
6
IC = 50A
IC =25A
E(ON)
4
E(OFF)
E(OFF)
E(ON)
2
0
0
10
20
30
40
50
60
0
20
40
60
80
100
RG - Ohms
IC - Amperes
Fig. 7. Dependence of EON and EOFF on IC.
Fig. 8. Dependence of tfi and EOFF on RG.
600
20
15
10
5
IC =50A
CE = 250V
V
100
10
1
TJ = 125°C
RG = 5.2 Ω
dV/dt < 5V/ns
0.1
0
0
100
200
300
400
500
0
50
100
150
200
250
300
VCE - Volts
Qg - nanocoulombs
Fig.10.Turn-offSafeOperatingArea
Fig. 9. Gate Charge
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure11. IGBTTransientThermalResistance
IXGR 50N60B
IXGR 50N60BD1
160
A
140
4000
nC
80
T =100°C
VVRJ= 300V
T =100°C
VVRJ= 300V
A
120
100
80
60
40
20
0
3000
2000
1000
0
60
IF
TVJ=25°C
TVJ=100°C
I =120A
IF= 60A
IFF= 30A
IRM
Qr
I =120A
IF= 60A
IFF= 30A
40
20
0
TVJ=150°C
A/µs
-diF/dt
0
1
2
V
100
1000
0
200 400 600 800 1000
A/µs
-diF/dt
VF
Fig. 12 Forward current IF versus VF
2.0
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
Fig. 14 Peak reverse current IRM
versus -diF/dt
140
20
V
1.6
µs
T =100°C
VVRJ = 300V
ns
130
VFR
tfr
trr
1.5
Kf
15
10
5
1.2
VFR
tfr
120
110
100
90
I =120A
IF= 60A
IFF= 30A
1.0
0.8
0.4
0.
IRM
0.5
Qr
T =100°C
IFVJ = 60A
0.0
80
0
A/µs
0
40
80
120
160
0
200 400 600 800 1000
0
200 400 600 800 1000
diF/dt
°C
A/µs
TVJ
-diF/dt
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and
tfr versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
0.1
ZthJC
1
2
3
4
0.3073
0.3533
0.0887
0.1008
0.0055
0.0092
0.0007
0.0399
0.01
0.001
DSEP 2x61-06A
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 18 Transient thermal resistance junction to case
© 2004 IXYS All rights reserved
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