IXGX120N60A3 [IXYS]
GenX3 A3-Class IGBTS; GenX3 A3级的IGBT
| 型号： | IXGX120N60A3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 A3-Class IGBTS |
| 文件： | 总6页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM A3-Class
IGBTS
IXGK120N60A3
IXGX120N60A3
VCES = 600V
IC110 = 120A
VCE(sat) ≤ 1.35V
Ultra-Low Vsat PT IGBTs for
up to 5kHz Switching
TO-264 (IXGK)
Symbol
VCES
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Maximum Ratings
600
600
±20
±30
V
V
V
V
VCGR
G
C
)
VGES
E
VGEM
Transient
IC25
TC = 25°C
200
120
75
A
A
A
A
PLUS 247TM (IXGX)
IC110
ILRMS
ICM
TC = 110°C
Terminal Current Limit
TC = 25°C, 1ms
600
SSOA
(RBSOA)
VGE= 15V, TVJ = 125°C, RG = 1.5Ω
Clamped Inductive Load
ICM = 200
A
V
@ < 600
G
C
E
(TAB)
PC
TC = 25°C
780
W
TJ
TJM
-55 ... +150
150
°C
°C
G = Gate
C = Collector
E
= Emitter
Tstg
-55 ... +150
°C
TAB = Collector
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
260
°C
°C
Features
Md
FC
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
z Optimized for Low Conduction Losses
z Square RBSOA
z High Current Handling Capability
z International Standard Packages
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VGE(th)
ICES
IC = 500μA, VCE = VGE
3.0
5.0
V
Applications
VCE = VCES, VGE = 0V
50 μA
TJ = 125°C
1.25 mA
z Power Inverters
z UPS
IGES
VCE = 0V, VGE = ±20V
±400 nA
z Motor Drives
VCE(sat)
IC = 100A, VGE = 15V, Note 1
1.20 1.35
V
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
DS99964A(02/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N60A3
IXGX120N60A3
Symbol
Test Conditions
Characteristic Values
TO-264 (IXGK) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
108
14.8
800
140
450
67
Max.
gfs
IC = 60A, VCE = 10 V, Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
65
S
nF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
Cies
Coes
Cres
Qg(on)
Qge
Qgc
td(on)
tri
IC = IC110, VGE = 15 V, VCE = 0.5 • VCES
130
39
82
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
Eon
td(off)
tfi
2.7
295
260
6.6
VCE = 480V, RG = 1.5Ω
Eoff
td(on)
tri
mJ
ns
40
83
ns
Inductive load, TJ = 125°C
IC = 100A, VGE = 15V
Eon
td(off)
tfi
3.5
mJ
ns
420
410
10.4
VCE = 480V, RG = 1.5Ω
ns
Eoff
RthJC
RthCK
mJ
0.16 °C/W
°C/W
0.15
PLUS 247TM (IXGX) Outline
Note: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
5.59
6.20
.220 0.244
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXGK120N60A3
IXGX120N60A3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
200
180
160
140
120
100
80
350
300
250
200
150
100
50
VGE = 15V
11V
9V
VGE = 15V
13V
11V
9V
7V
7V
5V
60
40
20
5V
0
0
0.0
0.0
5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.8
15
0
1
2
3
4
5
6
7
8
150
7.5
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
200
180
160
140
120
100
80
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGE = 15V
13V
11V
VGE = 15V
9V
I C = 200A
7V
5V
I C = 100A
I C = 50A
60
40
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
TJ = 25ºC
TJ = - 40ºC
25ºC
125ºC
I C = 200A
100A
50A
60
40
20
0
6
7
8
9
10
11
12
13
14
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N60A3
IXGX120N60A3
Fig. 8. Gate Charge
Fig. 7. Transconductance
200
180
160
140
120
100
80
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 120A
I
G = 10mA
25ºC
125ºC
6
60
4
40
2
20
0
0
0
50
100 150 200 250 300 350 400 450 500
QG - NanoCoulombs
0
20
40
60
80 100 120 140 160 180 200 220
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
220
200
180
160
140
120
100
80
100,000
10,000
1,000
100
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
60
RG = 1.5Ω
dV / dt < 10V / ns
40
C
res
20
0
100 150 200 250 300 350 400 450 500 550 600 650
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N60A3(86)02-11-09-B
IXGK120N60A3
IXGX120N60A3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
12
11
10
9
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
11
10
9
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
E
E
on - - - -
VGE = 15V
off
RG = 1.5
Ω ,
VCE = 480V
I C = 100A
8
E
E
on - - - -
off
TJ = 125ºC , VGE = 15V
VCE = 480V
8
7
TJ = 125ºC
6
7
5
TJ = 25ºC
6
I C = 50A
4
5
3
4
2
1
3
50
55
60
65
70
75
80
85
90
95
100
1
2
3
4
5
6
7
8
9
10
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
475
450
425
400
375
350
325
300
1000
900
800
700
600
500
400
300
12
11
10
9
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
E
E
on - - - -
RG = 1.5Ω VGE = 15V
t f
TJ = 125ºC, GE = 15V
td(off)
- - - -
V
off
,
VCE = 480V
CE = 480V
V
8
I C = 100A
7
I C = 100A
6
I C = 50A
5
4
3
I C = 50A
2
1
1
2
3
4
5
6
7
8
9
10
25
35
45
55
65
75
85
95
105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
500
475
450
425
400
375
350
325
300
275
250
225
500
475
450
425
400
375
350
325
300
275
250
225
450
425
400
375
350
325
300
275
250
225
475
450
425
400
375
350
325
300
275
250
tf
td(off)
- - - -
RG = 1.5Ω , VGE = 15V
TJ = 125ºC
VCE = 480V
I C = 100A, 50A
t f
td(off) - - - -
RG = 1.5Ω , VGE = 15V
VCE = 480V
TJ = 25ºC
25
35
45
55
65
75
85
95 105 115 125
50
55
60
65
70
75
80
85
90
95 100
TJ - Degrees Centigrade
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N60A3
IXGX120N60A3
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
120
110
100
90
80
70
60
50
40
30
20
10
0
43
42
41
40
39
38
37
36
35
34
33
32
31
160
140
120
100
80
90
80
70
60
50
40
30
20
tr
td(on)
- - - -
RG = 1.5Ω , VGE = 15V
tr
TJ = 125ºC, VGE = 15V
td(on) - - - -
I C = 100A
VCE = 480V
VCE = 480V
TJ = 25ºC, 125ºC
I C = 50A
60
40
20
50
55
60
65
70
75
80
85
90
95 100
1
2
3
4
5
6
7
8
9
10
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
110
100
90
80
70
60
50
40
30
20
48
46
44
42
40
38
36
34
32
30
tr
RG = 1.5Ω , VGE = 15V
td(on) - - - -
VCE = 480V
I C = 100A
I C = 50A
25
35
45
55
65
75
85
95 105 115 125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N60A3(86)02-11-09-B
相关型号：
IXGX32N170H1
Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, PLUS247, 3 PIN
IXYS
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