IXGX50N60A2U1 [IXYS]

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3PIN;


型号：	IXGX50N60A2U1
厂家：	IXYS CORPORATION
描述：	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3PIN 栅功率控制晶体管
文件：	总6页 (文件大小：143K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Advance Technical Information

V_CES

I_C25

V_CE(sat)

= 600 V

= 75 A

= 1.6 V

IXGK 50N60A2U1

IXGX 50N60A2U1

IGBT with Diode

Low Saturation Voltage IGBT

with Low Forward Drop Diode

PreliminaryDataSheet

Symbol

TestConditions

Maximum Ratings

TO-264

(IXGK)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

(TAB)

V_GES

V_GEM

Continuous

Transient

PLUS247

(IXGX)

I_C25

I_C110

I_F110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

T_C= 110°C (50N60A2D1 Diode)

T_C= 25°C, 1 ms

(TAB)

200

G = Gate

E = Emitter

C = Collector

Tab = Collector

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

I_CM= 80

(RBSOA)

Clamped inductive load @ V_CE≤ 600 V

P_C

T_C= 25°C

400

Features

• Low on-state voltage IGBT and

anti-parallel diode in one package

• High current handling capability

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

• MOS Gate turn-on for drive simplicity

M_d

Mounting torque (TO-264)

1.13/10 Nm/lb.in.

Weight

TO-264

PLUS247

Applications

• Lighting controls

• Heating controls

• AC/DC relays

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

Advantages

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

3.0

5.0

• Space savings (two devices in one

package)

V_CE= V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

650

µA

• Easy to mount with 1 screw or spring

clip

I_GES

V_CE= 0 V, V_GE= 20 V

100

V_CE(sat)

I_C= 50 A, V_GE= 15 V

Note 1

1.33 1.6

1.3

T_J= 125°C

DS99275A(02/05)

IXGK 50N60A2U1

IXGX 50N60A2U1

TO-264 Outline

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

I_C= 50 A; V_CE= 10 V,

Note 1

C_ies

C_oes

C_res

3500

400

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

Q_g

140

Q_ge

Q_gc

I_C= 50 A, V_GE= 15 V, V_CE= 0.5 V_CES

Dim.

Millimeter

Inches

Max.

.202

Min.

Max.

Min.

.190

4.82

2.54

2.00

5.13

2.89

2.10

.100

.079

.114

.083

t_d(on)

t_ri

t_d(off)

t_fi

Inductive load, T_J= 25°C

I_C= 50 A, V_GE= 15 V

1.12

2.39

2.90

0.53

25.91

19.81

5.46BSC

0.00

1.42

2.69

3.09

0.83

26.16

19.96

.044

.094

.114

.021

1.020

.780

.215BSC

.000

.056

.106

.122

.033

1.030

.786

410

260

3.5

V_CE= 480 V, R_G= R_off= 5.0 Ω

E_off

0.25

20.83

2.59

.010

.820

.102

t_d(on)

t_ri

20.32

2.29

3.17

.800

.090

.125

Inductive load, T_J= 125°C

I_C= 50 A, V_GE= 15 V

3.66

.144

E_on

t_d(off)

t_fi

1.0

720

510

7.7

6.07

8.38

3.81

1.78

6.04

1.57

6.27

8.69

4.32

2.29

6.30

1.83

.239

.330

.150

.070

.238

.062

.247

.342

.170

.090

.248

.072

V_CE= 480 V, R_G= R_off= 5.0 Ω

E_off

R_thJC

R_thCK

0.31 K/W

K/W

PLUS247 Outline

0.15

ReverseDiode(FRED)

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Symbol

V_F

TestConditions

I_F= 50 A, V_GE= 0 V,

Note 1

1.6

R_thJC

0.65 K/W

Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

Terminals: 1 - Gate

2 - Drain (Collector)

3-Source(Emitter)

4 - Drain (Collector)

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A₁

A₂

4.83

2.29

1.91

5.21

2.54

2.16

.190 .205

.090 .100

.075 .085

b₁

b₂

1.14

1.91

2.92

1.40

2.13

3.12

.045 .055

.075 .084

.115 .123

0.61

20.80 21.34

15.75 16.13

0.80

.024 .031

.819 .840

.620 .635

5.45 BSC

.215 BSC

19.81 20.32

.780 .800

.150 .170

3.81

4.32

5.59

4.32

6.20

4.83

.220 0.244

.170 .190

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered by

oneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728 B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2

6,710,463

6,727,585

6,759,692

6771478B2

IXGK 50N60A2U1

IXGX 50N60A2U1

Fig. 1. Output Characteristics

@ 25

Fig. 2. Extended Output Characteristics

@ 25 ºC

ºC

300

250

200

150

100

= 15V

13V

=15V

13V

11V

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

-50

0.5

1.5

2.5

V_{C E}- Volts

3.5

4.5

V_{C E}- Volts

Fig. 3. Output Characteristics

@ 125 ºC

Fig. 4. Dependence of V_CE(sat)on

Temperature

100

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

= 15V

13V

11V

= 15V

= 100A

= 50A

= 25A

0.2 0.4 0.6 0.8

V_CE- Volts

1.2 1.4 1.6 1.8

-25

T_J- Degrees Centigrade

100 125 150

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage

Fig. 6. Input Admittance

250

225

200

175

150

125

100

3.5

= 25 C

= 100A

50A

25A

2.5

T = 125 C

₂₅º_C

_-40º_C

1.5

10 11 12 13 14 15 16 17

V_{G E}- Volts

4.5

5.5

6.5

V_{G E}- Volts

7.5

8.5

9.5

IXGK 50N60A2U1

IXGX 50N60A2U1

Fig. 8. Dependence of Turn-off

Fig. 7. Transconductance

Energy Loss on R_G

= 100A

T = 125 C

= 15V

= 400V

T = -40 C

₂₅º_C

125 C

= 50A

= 25A

75 100 125 150 175 200 225

I _C- Amperes

30 40

- Ohms

Fig. 9. Dependence of Turn-Off

Energy Loss on I_C

Fig. 10. Dependence of Turn-off

Energy Loss on Temperature

= 5Ω

= 100A

= 15V

_{T = 125}º_C

= 400V

= 50A

T = 25 C

= 25A

25 35 45 55 65 75 85 95 105 115 125

T - Degrees Centigrade

I _C- Amperes

100

Fig. 11. Dependence of Turn-off

Switching Time on R_G

Fig. 12. Dependence of Turn-off

Switching Time on I_C

1800

1600

1400

1200

1000

800

900

800

700

600

500

400

300

200

t_d(off)

t_fi

- - - - -

= 25A

50A

100A

t_fi

- - - - - -

= 5Ω, V

= 15V

T = 125ºC

= 400V

= 15V

_{T = 125}º_C

= 400V

25A < I < 100A

_{T = 25}º_C

600

400

I _C- Amperes

100

R _G- Ohms

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGK 50N60A2U1

IXGX 50N60A2U1

Fig. 13. Dependence of Turn-off

Switching Time on Temperature

Fig. 14. Gate Charge

1000

900

800

700

600

500

400

300

200

13.5

t_d(off)

= 300V

t_fi

- - - - - -

= 50A

= 5Ω

= 25A

50A

100A

= 10mA

10.5

= 15V

= 400V

7.5

4.5

= 50A

25A

1.5

= 10 0A

25 35 45 55 65 75 85 95 105 115 125

T_J- Degrees Centigrade

Q _G- nanoCoulombs

100

120

140

Fig. 16. Reverse-Bias Safe

Operating Area

Fig. 15. Capacitance

10000

1000

100

160

f = 1 MHz

140

120

100

ies

oes

_{T = 125}º_C

= 10Ω

dV/dT < 10V/ns

res

V_{C E}- Volts

100 150 200 250 300 350 400 450 500 550 600

V_{C E}- Volts

Fig. 17. Maximum Transient Thermal Resistance

0.1

0.01

0.1

Pulse Width - milliseconds

100

1000

IXGK 50N60A2U1

IXGX 50N60A2U1

IXYS reserves the right to change limits, test conditions, and dimensions.

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