IXGX72N60B3H1 [IXYS]
GenX3 600V IGBT with Diode; GenX3 600V IGBT带二极管
| 型号： | IXGX72N60B3H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 600V IGBT with Diode |
| 文件： | 总7页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
GenX3TM 600V IGBT
with Diode
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 72A
≤£ 1.8V
= 92ns
IXGK72N60B3H1
IXGX72N60B3H1
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
TO-264 (IXGK)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
G
C
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
(TAB)
PLUS247 (IXGX)
IC25
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1ms
75
72
A
A
A
A
IC110
ICM
450
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped inductive load @ VCE ≤ 600V
ICM = 240
G
C
E
PC
TC = 25°C
540
W
G = Gate
E = Emitter
C
= Collector
TJ
-55 ... +150
150
°C
°C
°C
TAB = Collector
TJM
Tstg
-55 ... +150
Md
FC
Mounting torque (TO-264)
Mounting force (PLUS247)
1.13 / 10
20..120 / 4.5..27
Nm/lb.in.
N/lb.
Features
z Optimized for low conduction and
switching losses
TL
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
300
260
°C
°C
TSOLD
Weight
z Square RBSOA
TO-264
PLUS247
10
6
g
g
z Anti-parallel ultra fast diode
z International standard packages
Advantages
Symbol
Test Conditions
Characteristic Values
z High power density
z Low gate drive requirement
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.0
V
Applications
VCE = VCES
VGE = 0V
300
5
μA
mA
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
±100
nA
V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
IC = 120A
1.50
1.75
1.80
DS99869A(06/08)
© 2008 IXYS CORPORATION, All rights reserved
IXGK72N60B3H1
IXGX72N60B3H1
Symbol
Test Conditions
Characteristic Values
TO-264 (IXGK) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
IC = 50A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
45
76
S
Cies
Coes
Cres
6800
575
80
pF
pF
pF
Qg
225
40
nC
nC
nC
Qge
Qgc
IC = 60A, VGE = 15V, VCE = 0.5 • VCES
82
td(on)
tri
31
33
ns
ns
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
Eon
td(off)
tfi
1.4
152
92
mJ
240 ns
150 ns
DIM
INCHES
MIN
MILLIMETERS
VCE = 480V, RG = 3Ω
MAX
MIN
MAX
A
A1
b
b1
b2
c
D
E
e
J
0.185
0.102
0.037
0.087
0.110
0.017
1.007
0.760
.215 BSC
0.000
0.000
0.779
0.087
0.122
0.240
0.330
0.155
0.085
0.243
0.209
0.118
0.055
0.102
0.126
0.029
1.047
0.799
4.70
2.59
0.94
2.21
2.79
0.43
25.58
19.30
5.46 BSC
0.00
0.00
19.79
2.21
3.10
6.10
8.38
3.94
2.16
6.17
5.31
3.00
1.40
2.59
3.20
0.74
26.59
20.29
Eoff
1.0
2.0 mJ
td(on)
tri
29
34
ns
ns
Inductive load, TJ = 125°C
IC = 50A,VGE = 15V
Eon
td(off)
tfi
2.7
228
142
2.2
mJ
ns
0.010
0.010
0.842
0.102
0.138
0.256
0.346
0.187
0.093
0.253
0.25
0.25
21.39
2.59
3.51
6.50
8.79
4.75
2.36
6.43
V
CE = 480V,RG = 3Ω
K
L
ns
Eoff
mJ
L1
ØP
Q
Q1
ØR
ØR1
S
RthJC
RthCS
0.23 °C/W
°C/W
0.15
PLUS247TM (IXGX) Outline
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
Test Conditions
Min. Typ.
Max.
IF = 60A, VGE = 0V, Note 1
1.6
1.4
2.0
1.8
V
V
TJ = 150°C
TJ = 100°C
IRM
trr
8.3
A
IF = 60A, VGE = 0V,
140
ns
-diF/dt = 200A/μs, VR = 300V
RthJC
0.3 °C/W
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
120
100
80
60
40
20
0
330
300
270
240
210
180
150
120
90
VGE = 15V
13V
11V
VGE = 15V
13V
11V
9V
7V
9V
7V
60
30
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VCE - Volts
0
1
2
3
4
5
6
7
8
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
120
100
80
60
40
20
0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGE = 15V
13V
11V
VGE = 15V
I C = 120A
I C = 60A
9V
7V
I C = 30A
5V
-50
-25
0
25
50
75
100
125
150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
180
160
140
120
100
80
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
I C = 120A
60A
30A
TJ = 125ºC
25ºC
- 40ºC
60
40
20
0
5
6
7
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGE - Volts
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
130
120
110
100
90
16
14
12
10
8
VCE = 300V
I C = 60A
TJ = - 40ºC
25ºC
125ºC
I G = 10mA
80
70
60
50
6
40
4
30
20
2
10
0
0
0
20
40
60
80
100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200 220 240
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
280
240
200
160
120
80
10,000
1,000
100
C
ies
C
oes
TJ = 125ºC
C
res
RG = 3Ω
dV / dt < 10V / ns
40
= 1 MHz
5
f
0
100
10
200
300
400
500
600
0
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
E
E
on - - - -
RG = 3ꢀ VGE = 15V
off
,
VCE = 480V
I C =100A
TJ = 125ºC
E
E
on - - - -
off
TJ = 125ºC , VGE = 15V
VCE = 480V
I C = 50A
I C = 25A
TJ = 25ºC
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
35
40
45
50
55
IC - Amperes
RG - Ohms
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
7
6
5
4
3
2
1
0
7
240
220
200
180
160
140
120
100
80
1300
1150
1000
850
I C = 25A, 50A, 100A
6
5
4
3
2
1
0
I C = 100A
I C = 100A
700
E
E
on - - - -
I C = 50A
off
RG = 3ꢀ VGE = 15V
,
VCE = 480V
I C = 50A
550
400
tf
td(off) - - - -
I C = 25A
TJ = 125ºC, VGE = 15V
VCE = 480V
250
I C = 25A
105 115 125
100
0
5
10 15 20 25 30 35 40 45 50 55
RG - Ohms
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
220
200
180
160
140
120
100
80
260
245
230
215
200
185
170
155
140
230
210
190
170
150
130
110
90
250
235
220
205
190
175
160
145
130
TJ = 125ºC
tf
td(off) - - - -
RG = 3ꢀ , VGE = 15V
I C = 25A, 50A, 100A
VCE = 480V
tr
td(off)
- - - -
RG = 3 , VGE = 15V
ꢀ
TJ = 25ºC
70
VCE = 480V
60
70
25
35
45
55
65
75
85
95 105 115 125
20
30
40
50
60
80
90
100
IC - Amperes
TJ - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
170
150
130
110
90
140
125
110
95
90
80
70
60
50
40
30
20
10
34
33
32
31
30
29
28
27
26
tr
td(on)
- - - -
tr
td(on)
- - - -
TJ = 125ºC, VGE = 15V
RG = 3Ω , VGE = 15V
CE = 480V
VCE = 480V
V
I C = 100A
TJ = 25ºC, 125ºC
80
25ºC < TJ < 125ºC
70
65
I C = 50A
50
50
30
35
I C = 25A
10
20
0
5
10 15 20 25 30 35 40 45 50 55
RG - Ohms
20
30
40
50
60
70
80
90
100
IC - Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
100
35
34
33
32
31
30
29
28
27
26
25
90
80
70
60
50
40
30
20
10
0
I C = 100A
tr
td(on
) - - - -
RG = 3 , VGE = 15V
ꢀ
VCE = 480V
I C = 50A
I C = 25A
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_72N60B3(76)06-26-08-C
IXGK72N60B3H1
IXGX72N60B3H1
Fig. 22
Fig. 23
Fig. 21
Fig. 24
Fig. 25
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
[ s ]
Pulse Width [ms]
Fig. 26 Maximum transient thermal impedance junction to case (for diode)
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: G_72N60B3(76)06-26-08-C
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