IXKH20N60C5 [IXYS]
CoolMOS⢠1) Power MOSFET; CoolMOSâ ?? ¢ 1 ）功率MOSFET
| 型号： | IXKH20N60C5 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | CoolMOS⢠1) Power MOSFET |
| 文件： | 总4页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXKH 20N60C5
IXKP 20N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
ID25
VDSS
= 20 A
= 600 V
RDS(on) max = 0.2 Ω
D
TO-247 AD (IXKH)
G
G
D
S
q D(TAB)
S
TO-220 AB (IXKP)
G
D
S
Features
MOSFET
• fast CoolMOS™ 1) power MOSFET
- 4th generation
- High blocking capability
- Lowest resistance
Symbol
VDSS
Conditions
Maximum Ratings
TVJ = 25°C
600
20
V
VGS
V
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
ID25
ID90
TC = 25°C
TC = 90°C
20
13
A
A
EAS
EAR
single pulse
repetitive
435
0.66
mJ
mJ
ID = 6.6 A; TC = 25°C
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
50 V/ns
Applications
• Switched mode power supplies
(SMPS)
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
min. typ. max.
RDSon
VGS = 10 V; ID = 10 A
180
3
200
mΩ
• Inductive heating
• PDP and LCD adapter
VGS(th)
IDSS
VDS = VGS; ID = 1.1 mA
VDS = 600 V; VGS = 0 V
2.5
3.5
1
V
TVJ = 25°C
TVJ = 125°C
µA
µA
10
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
IGSS
VGS
=
20 V; VDS = 0 V
100
45
nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
1520
72
pF
pF
Qg
Qgs
Qgd
32
8
11
nC
nC
nC
VGS = 0 to 10 V; VDS = 400 V; ID = 10 A
td(on)
tr
td(off)
tf
10
5
50
5
ns
ns
ns
ns
VGS = 10 V; VDS = 400 V
ID = 10 A; RG = 3.3 Ω
RthJC
0.60 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523d
1 - 4
IXKH 20N60C5
IXKP 20N60C5
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
10
A
VSD
IF = 10 A; VGS = 0 V
0.9
1.2
V
trr
QRM
IRM
340
5.5
33
ns
µC
A
IF = 10 A; -diF/dt = 100 A/µs; VR = 400 V
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
operating
-55...+150
-55...+150
°C
°C
Md
mounting torque
TO-247
TO-220
0.8 ... 1.2
0.4 ... 0.6
Nm
Nm
Symbol
Conditions
Characteristic Values
min. typ. max.
RthCH
with heatsink compound TO-247
TO-220
0.25
0.50
K/W
K/W
Weight
TO-247
TO-220
6
2
g
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523d
2 - 4
IXKH 20N60C5
IXKP 20N60C5
TO-247 AD Outline
Symbol
Inches
min
Millimeters
max
0.209
0.102
0.098
0.845
0.640
0.216
min
max
A
0.185
0.087
0.059
0.819
0.610
0.170
4.70
2.21
5.30
2.59
A1
A2
D
E
E2
e
1.50
2.49
20.79
15.48
4.31
21.45
16.24
5.48
0.215 BSC
5.46 BSC
L
0.780
-
0.140
0.212
0.800
0.177
0.144
0.244
19.80
-
3.55
5.38
20.30
4.49
3.65
6.19
L1
ØP
Q
S
0.242 BSC
6.14 BSC
b
0.039
0.065
0.102
0.015
0.515
0.020
0.530
-
0.055
0.094
0.135
0.035
-
0.053
-
0.291
0.99
1.65
2.59
0.38
13.07
0.51
13.45
-
1.40
2.39
3.43
0.89
-
1.35
-
7.39
b2
b4
c
D1
D2
E1
ØP1
TO-220 AB Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
M
A
B
12.70 13.97
14.73 16.00
0.500 0.550
0.580 0.630
C
N
C
D
9.91 10.66
3.54 4.08
0.390 0.420
0.139 0.161
E
F
5.85 6.85
2.54 3.18
0.230 0.270
0.100 0.125
G
H
1.15 1.65
2.79 5.84
0.045 0.065
0.110 0.230
G
J
K
0.64 1.01
2.54 BSC
0.025 0.040
0.100 BSC
Q
R
J
M
N
4.32 4.82
1.14 1.39
0.170 0.190
0.045 0.055
K
L
Q
R
0.35 0.56
2.29 2.79
0.014 0.022
0.090 0.110
250
200
150
100
50
75
60
45
30
15
0
35
30
25
20
15
10
5
TJ = 125°C
TJ = 25°C
20 V
20 V
=
VGS
10 V
10 V
7 V
6 V
8 V
=
VGS
8 V
5.5 V
7 V
6 V
5 V
5.5 V
4.5 V
5 V
4.5 V
0
0
0
0
5
10
[V]
15
20
5
10
15
20
0
40
80
120
160
V
V DS [V]
TC [°C]
DS
Fig. 1 Power dissipation
Fig. 2 Typ. output characteristics
Fig. 3 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523d
3 - 4
IXKH 20N60C5
IXKP 20N60C5
1.2
0.6
0.5
0.4
0.3
0.2
0.1
80
60
40
20
0
6.5 V
TJV = 150°C
VDS
ID = 10 A
VGS = 10 V
VDS > 2·RDS(on) max · ID
6 V
5.5 V
5 V
=
1
25 °C
10 V
0.8
0.6
0.4
0.2
7 V
98 %
TJ = 150 °C
typ
0
0
0
2
4
6
8
10
-60
-20
20
60
j [°C]
100
140
180
0
10
20
30
40
V
[V]
T
GS
I D [A]
Fig. 4 Typ. drain-source on-state
Fig. 5 Drain-source on-state resistance
Fig. 6 Typ. transfer characteristics
resistance characteristics of IGBT
10 2
10 1
10 0
10 -1
10 5
10 4
10 3
10 2
10 1
10 0
10
9
8
7
6
5
4
3
2
1
0
ID = 10 A pulsed
VGS = 0 V
f = 1 MHz
25 °C, 98%
VDS = 120 V
150 °C, 98%
25 °C
40 0V
Ciss
50 °C
TJ =
Coss
Crss
0
0.5
1
1.5
2
0
100
200
300
[V]
400
500
0
10
20
30
40
V
[V]
Q
gate [nC]
V
SD
DS
Fig. 7 Forward characteristic
of reverse diode
Fig. 8 Typ. gate charge
Fig. 9 Typ. capacitances
10 0
10 -1
10 -2
500
700
ID = 6.6 A
ID = 0.25 mA
0.5
0.2
400
300
200
100
660
620
580
540
D = tp/T
0.1
0.05
0.02
0.01
single pulse
0
20
60
100
140
180
-60
-20
20
60
100
140
180
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
T
j [°C]
T
j [°C]
t p [s]
Fig. 10 Avalanche energy
Fig. 11 Drain-source breakdown voltage
Fig. 12 Max. transient thermal
impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523d
4 - 4
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