首页 |元器件品牌

IXKK94N60C3 [LITTELFUSE]

Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN;
IXKK94N60C3
型号： IXKK94N60C3
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

局域网 开关 晶体管
文件： 总4页 (文件大小：555K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
ADVANCE TECHNICAL INFORMATION  
IXKK 94N60C3  
Power MOSFET  
SuperjDuSn(ocnt)ion MOSFET  
VDSS  
ID25  
= 600 V  
= 94 A  
Low R  
, High Voltage,  
RDS(on) = 35 mΩ  
Symbol  
Test Conditions  
Maximum Ratings  
TO-264  
VDSS  
VGS  
TJ = 25°C to 150°C  
600  
20  
V
V
Continuous  
ID25  
TC = 25°C; Note 1  
TC = 100°C, Note 1  
94  
60  
A
A
G
D
(TAB)  
ID100  
S
ID(RMS)  
EAS  
Package lead current limit  
45  
A
Io = 10A, TC = 25°C  
1800  
mJ  
G = Gate  
S = Source  
D = Drain  
PD  
TC = 25°C  
780  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +125  
z 3RD generation Superjunction power  
MOSFET  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting force  
300  
°C  
FC  
11 ... 65 / 2.4 ...11 N/lb  
- High blocking capability  
- Low on resistance  
Weight  
3
g
- Avalanche rated for unclamped inductive  
switching (UIS)  
z Low thermal resistance due to reduced  
chip thickness  
Applications  
z Switched Mode Power Supplies (SMPS)  
z Uninterruptible Power Supplies (UPS)  
z Power Factor Correction (PFC)  
z Welding  
z Inductive Heating  
Symbol  
RDS(on)  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGS = 10 V, I = ID100, Note  
30  
75  
35 mΩ  
mΩ  
VGS = 10 V, IDD = ID100, Note TJ = 125°C  
VGS(th)  
IDSS  
VDS = VGS, ID = 4 mA  
2
3
4
V
VDS = V  
T = 25°C  
50 µA  
400 µA  
VGS = 0DVSS  
TJJ = 150°C  
IGSS  
VGS = 20 VDC, VDS = 0  
200  
nA  
DS99065B(08/03)  
© 2003 IXYS All rights reserved  
IXKK 94N60C3  
Symbol  
gFS  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-264 Outline  
VDS = 10 V, ID = ID100  
75  
S
Qg(on)  
Qgs  
500 625  
48  
nC  
nC  
nC  
VGS = 10 V, VDS = 350 V, ID = 40 A  
Qgd  
240  
td(on)  
tr  
td(off)  
tf  
20  
27  
14  
10  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 380V  
ID = 60 A, RG = 2.2 Ω  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
A1  
A2  
RthJC  
RthCH  
0.16 K/W  
K/W  
b
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
0.15  
b1  
b2  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
25.91 26.16  
E
19.81 19.96  
Reverse Correction  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
e
5.46 BSC  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
Symbol  
VSD  
Test Conditions  
L
20.32 20.83  
.800  
.820  
L1  
2.29  
3.17  
2.59  
3.66  
.090  
.102  
P
.125  
.144  
IF = I , VGS = 0 V  
NoteD1100  
1.0  
1.2  
V
Q
6.07  
6.27  
.239  
.247  
Q1  
8.38  
8.69  
.330  
.342  
R
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Note: 1. Pulse test, t100 ≤ 300 µs, duty cycle d ≤ 2 %  
R1  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by one or more  
of the following U.S. patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
6,306,728B1  
6,259,123B1  
6,306,728B1  
6,534,343  
6,404,065B1 6,162,665  
IXKK 94N60C3  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
360  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
7V  
t
t
p = 300µs  
p = 300µs  
320  
280  
240  
200  
160  
120  
80  
6V  
5V  
6V  
5V  
4.5V  
4V  
40  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10  
12 14  
16  
18  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID100 Value  
vs. Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
VGS = 10V  
VGS = 10V  
p = 300µs  
t
p = 300µs  
5V  
t
4.5V  
4V  
ID = 60A  
ID = 30A  
0.7  
0.4  
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
D100 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
I
4
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
t
p = 300µs  
TJ = 125ºC  
TJ = 25ºC  
0.7  
40  
80 120 160 200 240 280 320 360  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXKK 94N60C3  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
240  
210  
180  
150  
120  
90  
180  
160  
140  
120  
100  
80  
TJ = -40ºC  
25ºC  
125ºC  
60  
TJ = 125ºC  
25ºC  
60  
40  
-40ºC  
30  
20  
0
0
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
0
30  
60  
90  
120 150 180 210 240  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
200  
180  
160  
140  
120  
100  
80  
VDS = 350V  
ID = 80A  
G = 10mA  
I
TJ = 125ºC  
60  
TJ = 25ºC  
40  
20  
0
0
60 120 180 240 300 360 420 480 540  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
0.18  
0.16  
0.14  
0.12  
0.1  
100000  
10000  
1000  
100  
f = 1MHz  
C
iss  
C
oss  
0.08  
0.06  
0.04  
0.02  
0
C
rss  
10  
1
10  
100  
1000  
0
10 20 30 40 50 60 70 80 90 100  
Pulse Width - milliseconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by one or more  
of the following U.S. patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
6,306,728B1  
6,259,123B1  
6,306,728B1  
6,534,343  
6,404,065B1 6,162,665  

相关型号：

IXKN40N60

 CoolMOS Power MOSFET
IXYS

IXKN40N60C

 CoolMOS Power MOSFET
IXYS

IXKN45N80C

 CoolMOS Power MOSFET
IXYS

IXKN75N60

 CoolMOS Power MOSFET
IXYS

IXKN75N60C

 CoolMOS Power MOSFET
IXYS

IXKP10N60C5

 Power Field-Effect Transistor, 600A I(D), 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
LITTELFUSE

IXKP10N60C5M

 Power Field-Effect Transistor, 5.4A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN
LITTELFUSE

IXKP10N60C5M

 Power Field-Effect Transistor, 5.4A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN
IXYS

IXKP13N60C5

 Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
LITTELFUSE

IXKP13N60C5M

 Power Field-Effect Transistor, 6.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN
IXYS

IXKP13N60C5M

 Power Field-Effect Transistor, 6.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN
LITTELFUSE

IXKP20N60C5

 Power Field-Effect Transistor,
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明