IXKP10N60C5M [IXYS]
Power Field-Effect Transistor, 5.4A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN;
| 型号： | IXKP10N60C5M |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 5.4A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXKP 10N60C5M
CoolMOS™ 1) Power MOSFET
ID25
VDSS
=
5.4 A
= 600 V
RDS(on) max = 0.385 Ω
Fully isolated package
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
D
TO-220 ABFP
G
D
S
G
Preliminary data
S
Features
MOSFET
• Fast CoolMOS™ 1) power MOSFET 4th
generation
- High blocking capability
- Lowest resistance
Symbol
VDSS
Conditions
Maximum Ratings
TVJ = 25°C
600
20
V
VGS
V
- Avalanche rated for unclamped
inductive switching (UIS)
• Fully isolated package
ID25
ID90
TC = 25°C
TC = 90°C
5.4
3.7
A
A
EAS
EAR
single pulse
repetitive
225
0.3
mJ
mJ
ID = 3.4 A; TC = 25°C
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
50 V/ns
Symbol
Conditions
Characteristic Values
• Inductive heating
• PDP and LCD adapter
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon
VGS = 10 V; ID = 5.2 A
350
3
385
mΩ
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
VGS(th)
IDSS
VDS = VGS; ID = 0.34 mA
VDS = 600 V; VGS = 0 V
2.5
3.5
1
V
TVJ = 25°C
TVJ = 125°C
µA
µA
10
IGSS
VGS
=
20 V; VDS = 0 V
100
22
nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
790
38
pF
pF
Qg
Qgs
Qgd
17
4
6
nC
nC
nC
VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A
td(on)
tr
td(off)
tf
10
5
40
5
ns
ns
ns
ns
VGS = 10 V; VDS = 400 V
ID = 5.2 A; RG = 3.3 Ω
RthJC
3.95 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209d
1 - 4
IXKP 10N60C5M
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
5.2
1.2
A
VSD
IF = 5.2 A; VGS = 0 V
0.9
V
trr
QRM
IRM
260
21
24
ns
µC
A
IF = 5.2 A; -diF/dt = 100 A/µs; VR = 400 V
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
operating
-55...+150
-55...+150
°C
°C
Md
mounting torque
0.4 ... 0.6
Nm
Symbol
Conditions
Characteristic Values
min. typ. max.
RthCH
RthJA
with heatsink compound
thermal resistance junction - ambient
0.50
80
K/W
K/W
Weight
2
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209d
2 - 4
IXKP 10N60C5M
TO-220 ABFP Outline
Ø P
A
E
A1
H
Q
D
L1
A2
L
c
b1
b
e
35
30
25
20
15
10
5
16
14
12
10
8
25
20
15
10
5
8 V
20 V
10 V
8 V
7 V
TJ = 25°C
TJ = 150°C
7 V
10 V
6 V
VGS
=
20 V
VGS
=
5.5 V
6 V
5 V
5.5 V
6
4.5 V
5 V
4
2
4.5 V
0
0
0
0
40
80
120
160
0
5
10
[V]
15
20
0
5
10
15
20
TC [°C]
V
DS
V DS [V]
Fig. 1 Power dissipation
Fig. 2 Typ. output characteristics
Fig. 3 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209d
3 - 4
IXKP 10N60C5M
1.6
1.2
0.8
0.4
1.2
40
36
32
28
24
20
16
12
8
6.5 V
6 V
ID = 5.2 A
VDS > 2·RDS(on) max · ID
VGS = 10 V
25 °C
7 V
5 V
5.5 V
1
20 V
0.8
0.6
0.4
0.2
150 °C
98 %
TJ =
typ
4
0
0
0
-60
-20
20
60
j [°C]
100
140
180
0
5
10
15
20
0
2
4
6
8
10
T
I D [A]
V
[V]
GS
Fig. 3 Typ. drain-source on-state
Fig. 4 Drain-source on-state resistance
Fig. 5 Typ. transfer characteristics
resistance characteristics of IGBT
10 2
10 1
10 0
10 -1
10 5
10
ID = 5.2 A pulsed
VGS = 0 V
f = 1 MHz
9
8
7
6
5
4
3
2
1
0
10 4
10 3
10 2
10 1
10 0
VDS
=
120 V
150 °C, 98%
25 °C
TJ = 150 °C
400 V
Ciss
Coss
25 °C, 98%
Crss
0
50
100
[V]
150
200
0
0.5
1
1.5
2
0
5
10
gate [nC]
15
20
V
V
[V]
Q
DS
SD
Fig. 6 Forward characteristic
of reverse diode
Fig. 7 Typ. gate charge
Fig. 8 Typ. capacitances
250
200
150
100
50
700
660
620
580
540
ID = 3.4 A
ID = 0.25 mA
0
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j [°C]
T
j [°C]
Fig. 9 Avalanche energy
Fig. 10 Drain-source breakdown voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209d
4 - 4
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