IXSP16N60 [IXYS]

Low V CE(sat) IGBT - Short Circuit SOA Capability; 低V CE ( sat)的IGBT - 短路SOA能力
IXSP16N60
型号: IXSP16N60
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Low V CE(sat) IGBT - Short Circuit SOA Capability
低V CE ( sat)的IGBT - 短路SOA能力

双极性晶体管
文件: 总2页 (文件大小:52K)
下载:  下载PDF数据表文档文件

IXSP20N60B2

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN

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0 IXYS

IXSP20N60B2D1

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263, 3 PIN

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0 IXYS

IXSP24N60B

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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0 IXYS

IXSP2N100

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB

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6 ETC

IXSP2N100A

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB

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19 ETC

IXSR35N120BD1

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

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15 IXYS

IXSR35N120BD1

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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0 IXYS

IXSR40N60BD1

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

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28 IXYS

IXSR40N60CD1

IGBT with Diode ISOPLUS247

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17 IXYS

IXSR45N120B

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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0 IXYS

IXSR50N60BD1

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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0 IXYS

IXSR50N60BU1

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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0 IXYS

IXST15N120B

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3

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0 IXYS

IXST15N120BD1

S Series - Improved SCSOA Capability

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43 IXYS

IXST24N60B

High Speed IGBT

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5 IXYS