select brandShort,logo,brand from pdf_brand where id=2 limit 1 IXSP2N100_技术文档

IXSP2N100 [ETC]

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB ; 晶体管| IGBT | N -CHAN | 1KV V（ BR ） CES | 3A I（C ） | TO- 220AB\n

IXSP2N100


型号：	IXSP2N100
厂家：	ETC
描述：	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 3A I(C) \| TO-220AB 晶体管\| IGBT \| N -CHAN \| 1KV V（ BR ） CES \| 3A I（C ） \| TO- 220AB\n 晶体晶体管双极性晶体管
文件：	总2页 (文件大小：124K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

IXSP2N100A

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB

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ETC

IXSR35N120BD1

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

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IXYS

IXSR40N60BD1

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

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IXYS

IXSR40N60CD1

IGBT with Diode ISOPLUS247

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IXYS

IXSR45N120B

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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IXYS

IXSR50N60BD1

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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IXYS

IXSR50N60BU1

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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IXYS

IXST15N120B

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3

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IXYS

IXST15N120BD1

S Series - Improved SCSOA Capability

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IXYS

IXST24N60B

High Speed IGBT

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IXYS

IXST24N60BD1

High Speed IGBT

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IXYS

IXST30N60B

High Speed IGBT

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IXYS

IXST30N60B2D1

Insulated Gate Bipolar Transistor,

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LITTELFUSE

IXST30N60BD1

High Speed IGBT with Diode

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IXYS

IXST30N60C

High Speed IGBT

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IXYS

IXST30N60CD1

Short Circuit SOA Capability

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IXYS

IXST35N120B

IGBT

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IXYS

IXST40N60B

High Speed IGBT

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IXYS

IXST40N60CD1

Insulated Gate Bipolar Transistor, 75A I(C), N-Channel, TO-268AA, D3PAK-3

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IXYS

IXST45N120B

High Voltage IGBT S Series - Improved SCSOA Capability

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IXYS

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