IXST30N60BD1 [IXYS]
High Speed IGBT with Diode; 高速IGBT与二极管
| 型号： | IXST30N60BD1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Speed IGBT with Diode |
| 文件： | 总5页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Speed IGBT with Diode
IXSH 30N60BD1
IXSK 30N60BD1
IXST 30N60BD1
VCES
IC25
= 600 V
= 55 A
VCE(sat) = 2.0 V
tfi
Short Circuit SOA Capability
= 140 ns
TO-247AD
(IXSH)
Symbol
TestConditions
MaximumRatings
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MW
G
C
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
TO-268 (D3)
(IXST)
IC25
IC90
ICM
TC = 25°C
55
30
A
A
A
TC = 90°C
TC = 25°C, 1 ms
110
G
E
SSOA
(RBSOA)
VGE= 15 V, TJ = 125°C, RG = 10 W
Clamped inductive load, VCL = 0.8 VCES
ICM = 60
A
ms
W
TO-264
(IXSK)
tSC
(SCSOA)
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 33 W, non repetitive
10
PC
TC = 25°C
200
G
C
TJ
-55 ... +150
150
°C
°C
°C
E
TJM
Tstg
G = Gate
E = Emitter
C = Collector
TAB = Collector
-55 ... +150
Md
Mountingtorque
1.13/10 Nm/lb.in.
Features
• Internationalstandardpackages:
JEDEC TO-247, TO-264& TO-268
• Short Circuit SOA capability
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Weight
TO-247/TO-268
TO-264
6/4
10
g
g
• Medium freqeuncy IGBT and anti-
parallel FRED in one package
• New generation HDMOSTM process
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
IC = 750 mA, VGE = 0 V
600
4
V
V
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Surface mountable, high power case
style
• Reduces assembly time and cost
• High power density
IC = 2.5 mA, VCE = VGE
7
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200 mA
mA
3
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
VCE(sat)
VGE = 15 V
IC = IC90
IC = IC25
2.0
2.7
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98517A(7/00)
1 - 5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Symbol
gfs
TestConditions
CharacteristicValues
TO-247 AD (IXSH) Outline
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
10
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
3100
240
30
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim. Millimeter
Inches
Qg
Qge
Qgc
100
30
38
nC
nC
nC
Min. Max. Min. Max.
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
td(on)
tri
td(off)
tfi
30
30
150
140
1.5
ns
ns
270 ns
270 ns
2.5 mJ
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Inductive load, TJ = 25°C
IC = IC90; VGE = 15 V
E
F
4.32 5.49 0.170 0.216
VCE = 0.8 VCES; RG = 4.7 W
5.4
6.2 0.212 0.244
Note 1.
Eoff
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
td(on)
tri
30
35
ns
ns
J
K
1.0
1.4 0.040 0.055
Inductive load, TJ = 125°C
10.8 11.0 0.426 0.433
Eon
td(off)
tfi
0.5
270
250
2.5
mJ
ns
ns
IC = IC90; VGE = 15 V
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
VCE = 0.8 VCES; RG = 4.7 W
N
1.5 2.49 0.087 0.102
Eoff
mJ
Note 1
TO-264 AA (IXSK) Outline
RthJC
RthCK
RthCK
0.62 K/W
K/W
TO-247
TO-264
0.25
0.15
K/W
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = IC90, VGE = 0 V
Note 2
TJ = 150 °C
TJ = 25 °C
1.7
2.5
V
V
Dim.
Millimeter
Inches
IRM
IF = 50A; VGE = 0 V; TJ = 100 °C
VR = 100 V; -diF/dt = 100 A/ms
2
2.5
A
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
trr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C
35
50 ns
.09 K/W
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
RthJC
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG.
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
TO-268AA (IXST) (D3 PAK)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
Q
Q1
R
3.17
6.07
8.38
3.81
1.78
3.66
6.27
8.69
4.32
2.29
.125
.239
.330
.150
.070
.144
.247
.342
.170
.090
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
R1
.75
.83
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
Min. Recommended Footprint
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 5
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Fig.1 Saturation Characteristics
Fig.2 Output Characterstics
200
100
80
60
40
20
0
V
GE = 15V
11V
9V
VGE = 15V
TJ = 25°C
13V
TJ = 25°C
13V
160
120
80
11V
7V
9V
40
7V
5V
0
0
2
4
6
8
10
0
1
2
3
4
5
VCE - Volts
Fig.4 Temperature Dependence
VCE - Volts
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
of Output Saturation Voltage
1.6
1.4
1.2
1.0
0.8
0.6
120
100
80
60
40
20
0
VGS=15V
TJ = 125°C
IC = 60A
VGE = 15V
13V
11V
IC = 30A
IC = 15A
9V
7V
25
50
75
TJ - Degrees C
Fig.6 Temperature Dependence of
100
125
150
0
2
4
6
8
10
VCE - Volts
Fig.5 Input Admittance
Breakdown and Threshold Voltage
140
120
100
80
10000
1000
100
V
CE = 10V
f = 1Mhz
C
iss
60
C
oss
TJ = 125°C
40
C
rss
20
TJ = 25°C
0
10
4
6
8
10
12
14
16
0
5
10 15 20 25 30 35 40
VCE-Volts
VGE - Volts
© 2000 IXYS All rights reserved
3 - 5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on RG
7.5
5.0
2.5
0.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
E(OFF)
TJ = 125°C
TJ = 125°C
RG = 10
IC = 60A
E(ON)
E(ON)
E(OFF)
E(ON)
IC = 30A
IC = 15A
E(OFF)
E(ON)
E(OFF)
0
10
20
30
40
50
0
20
40
60
80
RG - Ohms
IC - Amperes
Fig.9 Gate Charge Characteristic Curve
Fig.10 Turn-Off Safe Operating Area
15
12
9
100
IC =30A
V
CE = 300V
TJ = 125°C
RG = 4.7
10
1
dV/dt < 5V/ns
6
3
0
0.1
0
25
50
75
100
125
0
100
200
300
400
500
600
Qg - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Resistance
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4 - 5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
60
A
1000
nC
30
TVJ=100°C
VR = 300V
TVJ=100°C
VR = 300V
A
50
40
30
20
10
0
25
800
IF= 60A
IF= 30A
IF= 15A
IRM
IF= 60A
IF= 30A
IF= 15A
Qr
IF
20
15
10
5
TVJ=150°C
TVJ=100°C
600
400
200
0
TVJ=25°C
0
A/ s
-diF/dt
0
1
2
3 V
VF
100
1000
0
200 400 600 1000
A/ s
-diF/dt
Fig. 12 Forward current IF versus VF
2.0
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
Fig. 14 Peak reverse current IRM
versus -diF/dt
90
20
1.00
TVJ=100°C
TVJ=100°C
IF = 30A
VR = 300V
V
µs
ns
VFR
VFR
tfr
trr
1.5
Kf
15
0.75
0.50
0.25
0.
tfr
80
IF= 60A
IF= 30A
IF= 15A
1.0
10
5
IRM
70
60
0.5
Qr
0.0
0
A/ s
0
40
80
120
160
0
200 400 600 1000
A/ s
0
200 400 600 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr
versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
2
3
0.502
0.193
0.205
0.0052
0.0003
0.0162
0.1
ZthJC
0.01
DSEP 29-06
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 18 Transient thermal resistance junction to case
© 2000 IXYS All rights reserved
5 - 5
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