IXSX35N120AU1 [IXYS]

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247, PLUS247, 3 PIN;
IXSX35N120AU1
型号: IXSX35N120AU1
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247, PLUS247, 3 PIN

电动机控制 栅 晶体管
文件: 总5页 (文件大小:86K)
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IXSX35N120AU1S

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 70A I(C) | TO-247SMD

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6 ETC

IXSX35N120BD1

HIGH VOLTAGE IGBT WITH DIODE

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14 IXYS

IXSX35N120BD1

HIGH VOLTAGE IGBT WITH DIODE

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14 IXYS

IXSX40N60BD1

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247AD

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30 ETC

IXSX40N60CD1

IGBT with Diode

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23 IXYS

IXSX40N60CD1

IGBT with Diode

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7 IXYS

IXSX50N60AU1

IGBT with Diode Combi Pack - Short Circuit SOA Capability

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16 IXYS

IXSX50N60AU1S

IGBT with Diode Combi Pack - Short Circuit SOA Capability

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14 IXYS

IXSX50N60BD1

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN

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0 IXYS

IXSX50N60BU1

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247VAR

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9 ETC

IXSX80N60B

High Current IGBT Short Circuit SOA Capability

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24 IXYS

IXTA02N250

Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

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2 LITTELFUSE

IXTA02N250HV

Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3

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5 IXYS

IXTA02N250HV

Power Field-Effect Transistor,

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2 LITTELFUSE

IXTA02N250HV-TRL

Power Field-Effect Transistor,

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3 IXYS