IXSX35N120BD1 [IXYS]

HIGH VOLTAGE IGBT WITH DIODE; 高电压IGBT与二极管

IXSX35N120BD1


型号：	IXSX35N120BD1
厂家：	IXYS CORPORATION
描述：	HIGH VOLTAGE IGBT WITH DIODE 高电压IGBT与二极管二极管双极性晶体管高压
文件：	总2页 (文件大小：119K)
下载：	下载PDF数据表文档文件

IXSX40N60BD1

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247AD

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30 ETC

IXSX40N60CD1

IGBT with Diode

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23 IXYS

IXSX40N60CD1

IGBT with Diode

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7 IXYS

IXSX50N60AU1

IGBT with Diode Combi Pack - Short Circuit SOA Capability

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16 IXYS

IXSX50N60AU1S

IGBT with Diode Combi Pack - Short Circuit SOA Capability

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14 IXYS

IXSX50N60BD1

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN

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0 IXYS

IXSX50N60BU1

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247VAR

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9 ETC

IXSX80N60B

High Current IGBT Short Circuit SOA Capability

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24 IXYS

IXTA02N250

Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

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2 LITTELFUSE

IXTA02N250HV

Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3

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5 IXYS

IXTA02N250HV

Power Field-Effect Transistor,

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2 LITTELFUSE

IXTA02N250HV-TRL

Power Field-Effect Transistor,

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3 IXYS

IXTA02N450HV

High Voltage Power MOSFETs

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73 IXYS

IXTA05N100

High Voltage MOSFET

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45 IXYS

IXTA05N100HVTRL

Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN

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0 LITTELFUSE

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