IXTA02N450HV [IXYS]
High Voltage Power MOSFETs; 高电压功率MOSFET型号: | IXTA02N450HV |
厂家: | IXYS CORPORATION |
描述: | High Voltage Power MOSFETs |
文件: | 总5页 (文件大小:208K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Advance Technical Information
High Voltage
Power MOSFETs
VDSS
ID25
RDS(on) ≤ 750Ω
= 4500V
= 200mA
IXTA02N450HV
IXTT02N450HV
N-Channel Enhancement Mode
TO-263 (IXTA)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
4500
4500
V
V
TO-268 (IXTT)
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
G
S
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
200
600
mA
mA
D (Tab)
PD
TC = 25°C
113
W
G = Gate
S = Source
D
= Drain
Tab = Drain
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
Features
FC
Mounting Force (TO-263)
10..65 / 22..14.6
N/lb
z
High Blocking Voltage
High Voltage Packages
Weight
TO-263
TO-268
2.5
4.0
g
g
z
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ. Max.
VGS(th)
IGSS
VDS = VGS, ID = 250μA
VGS = ±20V, VDS = 0V
4.0
6.5
V
Applications
±100 nA
μA
z
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
z
IDSS
VDS = 3.6kV, VGS = 0V
VDS = 4.5kV
VDS = 3.6kV
5
z
10 μA
z
Laser and X-Ray Generation Systems
TJ = 100°C
25
μA
RDS(on)
VGS = 10V, ID = 10mA, Note 1
750
Ω
DS100498(10/12)
© 2012 IXYS CORPORATION, All Rights Reserved
IXTA02N450HV
IXTT02N450HV
Symbol
Test Conditions
Characteristic Values
TO-263 (VHV) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 60V, ID = 30mA, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
60
100
mS
Ciss
Coss
Crss
256
19
pF
pF
pF
5.5
RGi
76
Ω
td(on)
tr
td(off)
tf
17
48
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 500V, ID = 0.5 • ID25
RG = 10Ω (External)
PIN: 1 - Gate
2 - Source
3 - Drain
28
143
Qg(on)
Qgs
10.4
3.4
nC
nC
nC
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
Qgd
5.0
RthJC
1.1 °C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
200 mA
800 mA
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
TO-268 (VHV) Outline
1.5
V
IF = 200mA, -di/dt = 50A/μs, VR = 100V
1.6
μs
PIN:
1 - Gate
2 - Source
3 - Drain
Note:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA02N450HV
IXTT02N450HV
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
200
180
160
140
120
100
80
350
300
250
200
150
100
50
VGS = 10V
VGS = 10V
9V
8V
9V
8V
7V
7V
60
40
20
6V
6V
0
0
0
50
100
150
200
250
300
350
400
0
20
40
60
80
100
120
140
160
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 100mA Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
200
180
160
140
120
100
80
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
8V
VGS = 10V
7V
I D = 200mA
I D = 100mA
6V
5V
60
40
20
0
-50
-25
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TJ - Degrees Centigrade
VDS - Volts
Fig. 6. Maximum Drain Current vs.
Case Temperature
Fig. 5. RDS(on) Normalized to ID = 100mA Value vs.
Drain Current
220
200
180
160
140
120
100
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
60
40
20
0
-50
-25
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TC - Degrees Centigrade
ID - MilliAmperes
© 2012 IXYS CORPORATION, All Rights Reserved
IXTA02N450HV
IXTT02N450HV
Fig. 8. Transconductance
Fig. 7. Input Admittance
500
400
300
200
100
0
250
200
150
100
50
TJ = - 40ºC
25ºC
TJ = 125ºC
25ºC
125ºC
- 40ºC
0
0
50
100
150
200
250
4.5
5.0
5.5
6.0
6.5
7.0
7.5
VGS - Volts
ID - MilliAmperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
9
8
7
6
5
4
3
2
1
0
600
500
400
300
200
100
0
VDS = 1000V
I D = 100mA
I G = 1mA
TJ = 125ºC
TJ = 25ºC
0
1
2
3
4
5
6
7
8
9
10
11
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Maximum Transient Thermal Impedance
1,000
100
10
10
1
= 1 MHz
f
C
iss
0.1
C
oss
rss
0.01
0.001
C
1
0.0001
0.001
0.01
0.1
1
10
0
5
10
15
20
25
30
35
40
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA02N450HV
IXTT02N450HV
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 25ºC
Fig. 14. Forward-Bias Safe Operating Area
@ TC = 75ºC
1,000
100
10
1,000
100
10
RDS(on) Limit
RDS(on) Limit
1ms
1ms
10ms
10ms
TJ = 150ºC
TJ = 150ºC
DC
100ms
TC = 25ºC
TC = 75ºC
Single Pulse
Single Pulse
100ms
DC
100
1,000
10,000
100
1,000
10,000
VDS - Volts
VDS - Volts
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_02N450(H5)10-31-12-A
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