IXTA08N100D2 [IXYS]
Depletion Mode MOSFET; 耗尽型MOSFET
| 型号： | IXTA08N100D2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Depletion Mode MOSFET |
| 文件： | 总5页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
Depletion Mode
MOSFET
VDSX = 1000V
ID(on) > 800mA
IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
RDS(on) ≤ 21Ω
N-Channel
TO-252 (IXTY)
G
S
D (Tab)
Symbol
VDSX
Test Conditions
Maximum Ratings
TO-263 AA (IXTA)
TJ = 25°C to 150°C
1000
V
VGSX
VGSM
Continuous
Transient
±20
±30
V
V
G
S
PD
TC = 25°C
60
W
D (Tab)
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
TO-220AB (IXTP)
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
G
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
D
D (Tab)
= Drain
S
G = Gate
D
S = Source
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL94V-0
Flammability Classification
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1000
- 2.0
Typ.
Max.
BVDSX
VGS(off)
IGSX
VGS = - 5V, ID = 25μA
VDS = 25V, ID = 25μA
VGS = ±20V, VDS = 0V
VDS = VDSX, VGS= - 5V
V
V
Advantages
- 4.0
• Easy to Mount
• Space Savings
• High Power Density
±50 nA
μA
15 μA
IDSX(off)
1
TJ = 125°C
Applications
RDS(on)
ID(on)
VGS = 0V, ID = 400mA, Note 1
VGS = 0V, VDS = 50V, Note 1
21
Ω
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
800
mA
DS100182A(12/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Symbol
Test Conditions
Characteristic Values
TO-252 AA (IXTY) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 400mA, Note 1
VGS = -10V, VDS = 25V, f = 1MHz
330
560
mS
Ciss
Coss
Crss
325
24
pF
pF
pF
6.5
td(on)
tr
td(off)
tf
28
57
34
48
ns
ns
ns
ns
Resistive Switching Times
VGS = ±5V, VDS = 500V, ID = 400mA
RG = 10Ω (External)
1. Gate
2. Drain
3. Source
Qg(on)
Qgs
14.6
1.2
nC
nC
nC
Dim. Millimeter
Min. Max.
Inches
Min. Max.
VGS = 5V, VDS = 500V, ID = 400mA
A
2.19 2.38 0.086 0.094
0.89 1.14 0.035 0.045
Qgd
8.3
A1
A2
b
0
0.13
0
0.005
RthJC
RthCS
2.08 °C/W
°C/W
0.64 0.89 0.025 0.035
TO-220
0.50
b1
b2
0.76 1.14 0.030 0.045
5.21 5.46 0.205 0.215
c
c1
0.46 0.58 0.018 0.023
0.46 0.58 0.018 0.023
Safe-Operating-Area Specification
D
D1
5.97 6.22 0.235 0.245
4.32 5.21 0.170 0.205
Characteristic Values
E
E1
6.35 6.73 0.250 0.265
4.32 5.21 0.170 0.205
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
VDS = 800V, ID = 45mA, TC = 75°C, Tp = 5s
36
W
H
L
9.40 10.42 0.370 0.410
0.51 1.02 0.020 0.040
L1
L2
L3
0.64 1.02 0.025 0.040
0.89 1.27 0.035 0.050
2.54 2.92 0.100 0.115
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
TO-220 (IXTP) Outline
VSD
IF = 800mA, VGS = -10V, Note 1
0.8
1.3
V
trr
IRM
QRM
1.03
7.40
3.80
μs
A
μC
IF = 800mA, -di/dt = 100A/μs
VR = 100V, VGS = -10V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
14.61
2.29
1.02
1.27
0
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 5V
VGS = 5V
2V
2V
1V
1V
0V
0V
-1V
-1V
-2V
-2V
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
80
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
Fig. 4. Drain Current @ TJ = 25ºC
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
VGS = 5V
1V
VGS = - 3.00V
- 3.25V
0V
- 3.50V
- 3.75V
-1V
- 4.00V
- 4.25V
- 4.50V
-2V
-3V
0
5
10
15
20
25
30
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
VDS - Volts
Fig. 6. Dynamic Resistance vs. Gate Voltage
Fig. 5. Drain Current @ TJ = 100ºC
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
VDS = 700V - 100V
∆
VGS = -3.25V
-3.50V
-3.75V
-4.00V
TJ = 25ºC
-4.25V
-4.50V
TJ = 100ºC
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
-2.8
VGS - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 8. RDS(on) Normalized to ID = 0.4A Value
vs. Drain Current
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 0V
VGS = 0V
5V
- - - -
I
= 0.4A
D
TJ = 125ºC
TJ = 25ºC
0.4
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.6
0.8
1.0
1.2
1.4
1.6
TJ - Degrees Centigrade
ID - Amperes
Fig. 10. Transconductance
Fig. 9. Input Admittance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VDS = 30V
VDS = 30V
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS - Volts
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
Fig. 12. Forward Voltage Drop of Intrinsic Diode
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1.3
1.2
1.1
1.0
0.9
0.8
VGS = -10V
VGS(off) @ VDS = 25V
BVDSX @ VGS = - 5V
TJ = 125ºC
TJ = 25ºC
0.4
0.5
0.6
VSD - Volts
0.7
0.8
0.9
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 13. Capacitance
Fig. 14. Gate Charge
5
4
1,000
100
10
VDS = 500V
D = 400mA
I G = 1mA
I
3
C
C
iss
2
1
0
oss
-1
-2
-3
-4
-5
C
rss
= 1 MHz
5
f
1
0
2
4
6
8
10
12
14
16
0
10
15
20
25
30
35
40
VDS - Volts
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25ºC
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75ºC
10.00
1.00
0.10
10.00
1.00
0.10
0.01
RDS(on) Limit
RDS(on) Limit
25µs
25µs
100µs
100µs
1ms
1ms
10ms
100ms
10ms
DC
TJ = 150ºC
100ms
TJ = 150ºC
C = 75ºC
Single Pulse
DC
TC = 25ºC
T
Single Pulse
0.01
10.0
10
100
1,000
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
1.0
0.1
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_08N100D2(1C)8-25-09
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