IXTA1R6N100D2 [IXYS]
Depletion Mode MOSFET; 耗尽型MOSFET
| 型号： | IXTA1R6N100D2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Depletion Mode MOSFET |
| 文件： | 总5页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
Depletion Mode
MOSFET
VDSX = 1000V
ID(on) > 1.6A
IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
RDS(on) ≤ 10Ω
N-Channel
TO-252 (IXTY)
G
S
D (Tab)
Symbol
VDSX
Test Conditions
Maximum Ratings
TO-263 AA (IXTA)
TJ = 25°C to 150°C
1000
V
VGSX
VGSM
Continuous
Transient
±20
±30
V
V
G
S
PD
TC = 25°C
100
W
D (Tab)
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
TO-220AB (IXTP)
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
G
D
D (Tab)
= Drain
S
G = Gate
D
S = Source
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL94V-0
Flammability Classification
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1000
- 2.5
Typ.
Max.
BVDSX
VGS(off)
IGSX
VGS = - 5V, ID = 250μA
VDS = 25V, ID = 100μA
VGS = ±20V, VDS = 0V
VDS = VDSX, VGS= - 5V
V
V
Advantages
- 4.5
• Easy to Mount
• Space Savings
• High Power Density
±100 nA
μA
25 μA
IDSX(off)
2
TJ = 125°C
Applications
RDS(on)
ID(on)
VGS = 0V, ID = 0.8A, Note 1
VGS = 0V, VDS = 50V, Note 1
10
Ω
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
1.6
A
DS100185A(12/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Symbol
Test Conditions
Characteristic Values
TO-252 AA (IXTY) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 0.8A, Note 1
0.65
1.10
S
Ciss
Coss
Crss
645
43
pF
pF
pF
VGS = -10V, VDS = 25V, f = 1MHz
11
td(on)
tr
td(off)
tf
27
65
34
41
ns
ns
ns
ns
Resistive Switching Times
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
V
GS = ±5V, VDS = 500V, ID = 0.8A
RG = 5Ω (External)
Qg(on)
Qgs
27.0
1.6
nC
nC
nC
Dim. Millimeter
Min. Max.
Inches
Min. Max.
VGS = 5V, VDS = 500V, ID = 0.8A
A
2.19 2.38 0.086 0.094
0.89 1.14 0.035 0.045
Qgd
13.5
A1
A2
b
0
0.13
0
0.005
RthJC
RthCS
1.25 °C/W
°C/W
0.64 0.89 0.025 0.035
TO-220
0.50
b1
b2
0.76 1.14 0.030 0.045
5.21 5.46 0.205 0.215
c
c1
0.46 0.58 0.018 0.023
0.46 0.58 0.018 0.023
Safe-Operating-Area Specification
D
D1
5.97 6.22 0.235 0.245
4.32 5.21 0.170 0.205
Characteristic Values
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
E
E1
6.35 6.73 0.250 0.265
4.32 5.21 0.170 0.205
VDS = 800V, ID = 75mA, TC = 75°C, Tp = 5s
60
W
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42 0.370 0.410
0.51 1.02 0.020 0.040
Source-Drain Diode
L1
L2
L3
0.64 1.02 0.025 0.040
0.89 1.27 0.035 0.050
2.54 2.92 0.100 0.115
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VSD
IF = 1.6A, VGS = -10V, Note 1
0.8
1.3
V
TO-220 (IXTP) Outline
trr
IRM
QRM
970
9.96
4.80
ns
A
μC
IF = 1.6A, -di/dt = 100A/μs
VR = 100V, VGS = -10V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
14.61
2.29
1.02
1.27
0
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 5V
VGS = 5V
1V
0V
2V
1V
0V
-1V
-1V
- 2V
- 3V
- 2V
- 3V
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
80
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
Fig. 4. Drain Current @ TJ = 25ºC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-09
VGS = 5V
VGS = - 3.25V
- 3.50V
1V
0V
- 3.75V
- 4.00V
-1V
- 4.25V
- 2V
- 3V
- 4.50V
- 4.75V
0
4
8
12
16
20
24
28
32
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
VDS - Volts
Fig. 5. Drain Current @ TJ = 100ºC
Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
VDS = 700V - 100V
∆
VGS = - 3.50V
- 3.75V
- 4.00V
- 4.25V
TJ = 25ºC
- 4.50V
- 4.75V
TJ = 100ºC
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
-4.8
-4.6
-4.4
-4.2
-4.0
VGS - Volts
-3.8
-3.6
-3.4
-3.2
© 2009 IXYS CORPORATION, All Rights Reserved
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 8. RDS(on) Normalized to ID = 0.8A Value
vs. Drain Current
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 0V
VGS = 0V
5V
- - - -
I
= 0.8A
D
TJ = 125ºC
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TJ - Degrees Centigrade
ID - Amperes
Fig. 10. Transconductance
Fig. 9. Input Admittance
2.5
2.0
1.5
1.0
0.5
0.0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VDS= 30V
VDS= 30V
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
0
0.5
1
1.5
ID - Amperes
2
2.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
VGS - Volts
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
Fig. 12. Forward Voltage Drop of
Intrinsic Diode
1.3
1.2
1.1
1.0
0.9
0.8
5
4
3
2
1
0
VGS= -10V
VGS(off) @ VDS = 25V
BVDSX @ VGS = - 5V
TJ = 125ºC
TJ = 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 13. Capacitance
Fig. 14. Gate Charge
5
4
10,000
1,000
100
10
= 1 MHz
f
VDS = 500V
I
D = 0.8A
3
I G = 1mA
C
iss
2
1
0
C
oss
-1
-2
-3
-4
-5
C
rss
1
0
5
10
15
20
25
0
5
10
15
20
25
30
35
40
VDS - Volts
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25ºC
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75ºC
10.00
1.00
0.10
10.00
1.00
0.10
RDS(on) Limit
RDS(on) Limit
25µs
100µs
1ms
100µs
1ms
10ms
10ms
100ms
DC
100ms
DC
TJ = 150ºC
C = 75ºC
Single Pulse
TJ = 150ºC
C = 25ºC
Single Pulse
T
T
0.01
0.01
10
100
1,000
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
hvjv
2.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1R6N100D2(2C)8-24-09
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