IXTA20N65X [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTA20N65X |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
X-Class
Power MOSFET
VDSS = 650V
ID25 = 20A
RDS(on) 210m
IXTA20N65X
IXTP20N65X
IXTH20N65X
N-Channel Enhancement Mode
TO-263 (IXTA)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-220 (IXTP)
TJ = 25C to 150C
650
650
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
D (Tab)
S
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
20
40
A
A
TO-247 (IXTH)
dv/dt
PD
IS ID25, VDD VDSS, TJ 150°C
TC = 25C
30
V/ns
320
W
G
D
S
TJ
-55 ... +150
150
C
C
C
D (Tab)
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
G = Gate
S = Source
D
= Drain
Tab = Drain
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10.65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Features
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
International Standard Packages
Low RDS(ON) and QG
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
High Power Density
Easy to Mount
Space Savings
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
650
V
3.0
5.5
V
Applications
100 nA
A
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
IDSS
5
TJ = 125C
50 A
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
210 m
DS100564E(6/15)
© 2015 IXYS CORPORATION, All Rights Reserved
IXTA20N65X IXTP20N65X
IXTH20N65X
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
9
15
S
RGi
3.4
Ciss
Coss
Crss
1390
1060
22
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
77
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
232
td(on)
tr
td(off)
tf
18
30
46
22
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 5 (External)
Qg(on)
Qgs
35
7
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
18
RthJC
RthCS
0.39 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
20
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
80
1.4
V
trr
QRM
IRM
350
4.45
25
ns
IF = 10A, -di/dt = 100A/μs
C
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTA20N65X IXTP20N65X
IXTH20N65X
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
20
18
16
14
12
10
8
45
40
35
30
25
20
15
10
5
V
= 10V
8V
V
= 10V
9V
GS
GS
8V
7V
7V
6V
6
4
6V
2
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
20
18
16
14
12
10
8
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
8V
GS
V
= 10V
GS
7V
I
= 20A
D
I
= 10A
D
6V
5V
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
11
12
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 10A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
= 10V
GS
T
J
= 125ºC
BV
DSS
T = 25ºC
J
V
GS(th)
0
5
10
15
20
25
30
35
40
45
-60
-40
-20
0
20
40
60
80
100
120
140
TJ - Degrees Centigrade
ID - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXTA20N65X IXTP20N65X
IXTH20N65X
Fig. 7. Maximum Drain Current vs.
Case Temperature
Fig. 8. Input Admittance
30
25
20
15
10
5
20
16
12
8
T
J
= 125ºC
25ºC
- 40ºC
4
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
VGS - Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
24
20
16
12
8
60
50
40
30
20
10
0
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
T
J
= 25ºC
4
0
0
5
10
15
20
25
30
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
ID - Amperes
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
10
8
10,000
1,000
100
V
= 325V
DS
I
I
= 10A
D
G
C
iss
= 10mA
6
4
C
C
oss
rss
2
= 1 MHz
f
10
0
1
10
100
1000
0
5
10
15
20
25
30
35
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA20N65X IXTP20N65X
IXTH20N65X
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
100
10
16
14
12
10
8
R
DS(on)
Limit
25µs
100µs
1
1ms
6
10ms
100ms
4
0.1
0.01
T = 150ºC
J
DC
T
C
= 25ºC
2
Single Pulse
0
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_20N65X(J4) 6-17-15-A
IXTA20N65X IXTP20N65X
IXTH20N65X
TO-247 Outline
D
A
A
A2
0P
+
B
O 0K M D B M
E
+
A2
TO-220 Outline
TO-263 Outline
A
E
Q
oP
S
D2
A1
+
4
R
D1
D
H1
0P1
Q
1
2
3
D2
E1
ixys option
C
D
L1
D1
E1
L
A2
EJECTOR
L1
L
A1
b
b2
c
b4
PINS: 1 - Gate
e
1 = Gate
+
O
2, 4 - Drain
3 - Source
J
M
C A M
2 = Drain
3 = Source
4 = Drain
Bottom Side
e
c
3X b
3X b2
e1
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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