IXTC250N075T [IXYS]
Power Field-Effect Transistor, 128A I(D), 75V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS220, 3 PIN;
| 型号： | IXTC250N075T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 128A I(D), 75V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS220, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTC250N075T
VDSS = 75
ID25 = 128
RDS(on) ≤ 4.4 mΩ
V
A
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
ISOPLUS220 (IXTC)
E153432
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
75
75
V
V
VGSM
Transient
20
V
ID25
ILRMS
IDM
TC = 25°C
Package Current Limit, RMS
TC = 25°C, pulse width limited by TJM
128
75
600
A
A
A
G
D
S
Isolated back surface
G = Gate
S = Source
D = Drain
IAR
EAS
TC = 25°C
TC = 25°C
25
1.0
A
J
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 3.3 Ω
3
V/ns
Features
ꢀUltra-low On Resistance
ꢀUnclamped Inductive Switching (UIS)
rated
TC = 25°C
160
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
ꢀLow package inductance
- easy to drive and to protect
ꢀ175 °C Operating Temperature
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
Advantages
VISOL
50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS
Mounting force
2500
V
ꢀ
Easy to mount
Space savings
ꢀ
FC
11..65/2.5..15
2
N/lb.
g
ꢀ
High power density
Weight
Applications
ꢀ
Automotive
- Motor Drives
- 42V Power Bus
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
- ABS Systems
ꢀ
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
75
V
V
ꢀ
2.0
4.0
ꢀ
VGS
=
20 V, VDS = 0 V
200 nA
Applications
IDSS
VDS = VDSS
VGS = 0 V
5 μA
250 μA
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
4.4mΩ
DS99655 (02/07)
© 2007 IXYS CORPORATION All rights reserved
IXTC250N075T
Symbol
gfs
TestConditions
Characteristic Values
ISOPLUS220 (IXTC) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
VDS= 10 V; ID = 60 A, Note 1
75
120
S
Ciss
Coss
Crss
9900
1100
230
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
29
65
55
47
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
RG = 3.3 Ω (External)
1.Gate 2. Drain
3.Source
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1,2, and 3.
Qg(on)
Qgs
200
40
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
50
RthJC
RthCS
0.96 °C/W
°C/W
0.5
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min. Typ.
Max.
VGS = 0 V
220
A
A
ISM
VSD
trr
Pulse width limited by TJM
IF = 25 A, VGS = 0 V, Note 1
600
1.0
V
IF = 25 A, -di/dt = 100 A/μs
90
ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %;
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered
byoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478B2 7,071,537
7,005,734B2 7,157,338B2
7,063,975B2
IXTC250N075T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
250
225
200
175
150
125
100
75
350
300
250
200
150
100
50
V
= 10V
V
= 10V
GS
GS
9V
8V
9V
8V
7V
6V
7V
6V
50
5V
5V
25
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 125A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
250
225
200
175
150
125
100
75
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
GS
V
= 10V
GS
9V
8V
7V
I
= 250A
D
6V
I
= 125A
D
5V
50
25
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 125A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.6
2.4
2.2
2
90
80
70
60
50
40
30
20
10
0
T = 175ºC
J
External Lead Current Limit
V
= 10V
15V
GS
1.8
1.6
1.4
1.2
1
- - - -
T = 25ºC
J
0.8
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2007 IXYS CORPORATION All rights reserved
IXTC250N075T
Fig. 8. Transconductance
Fig. 7. Input Admittance
250
225
200
175
150
125
100
75
180
160
140
120
100
80
T
J
= - 40ºC
25ºC
T
J
= 150ºC
150ºC
25ºC
-40ºC
60
40
50
20
25
0
0
0
25
50
75
100 125 150 175 200 225 250
ID - Amperes
3
3.5
4
4.5
5
5.5
6
6.5
1.3
40
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
V
= 37.5V
DS
I
I
= 25A
D
G
= 10mA
T
= 150ºC
J
T
= 25ºC
J
0
0
20
40
60
80
100 120 140 160 180 200
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.00
0.10
0.01
f = 1 MHz
C
C
iss
oss
C
rss
0.0001
0.001
0.01
0.1
1
10
0
5
10
15
20
25
30
35
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTC250N075T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
53
50
47
44
41
38
35
32
29
26
23
20
55
50
45
40
35
30
25
20
R
V
V
= 3.3
Ω
G
= 10V
GS
DS
T = 25ºC
J
= 37.5V
R
V
V
= 3.3
Ω
G
= 10V
GS
DS
= 37.5V
I
= 50A
D
T = 125ºC
J
I
= 25A
D
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
53
102
200
180
160
140
120
100
80
85
80
75
70
65
60
55
50
45
40
35
t r
td(on)
52
51
50
49
48
47
46
45
44
43
42
41
40
98
- - - -
t f
R
td(off)
- - - -
T = 125ºC, V = 10V
J
94
90
86
82
78
74
70
66
62
58
54
50
GS
= 3.3 , V = 10V
Ω
G
GS
V
= 37.5V
I = 50A, 25A
D
DS
V
= 37.5V
DS
I
= 25A
D
60
I
= 50A
D
40
20
0
2
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
56
54
52
50
48
46
44
42
40
38
36
100
95
90
85
80
75
70
65
60
55
50
240
220
200
180
160
140
120
100
80
390
360
330
300
270
240
210
180
150
120
90
t f
R
V
td(off)
- - - -
t f
td(off)
- - - -
= 3.3 , VGS = 10V
Ω
G
T = 125ºC, V = 10V
J
GS
DS = 37.5V
V
= 37.5V
DS
I
= 25A
D
I
= 50A
D
T = 25ºC, 125ºC
J
60
40
20
60
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
2
4
6
8
10
12
14
16
18
20
RG - Ohms
© 2007 IXYS CORPORATION All rights reserved
IXYS REF: T_250N075T (6V) 2-02-07-B.xls
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