IXTD120N15P-7S [IXYS]
Power Field-Effect Transistor, 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.351 X 0.281 INCH, DIE;型号: | IXTD120N15P-7S |
厂家: | IXYS CORPORATION |
描述: | Power Field-Effect Transistor, 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.351 X 0.281 INCH, DIE 开关 晶体管 |
文件: | 总1页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PolarHTTM MOSFET, very low RDS(on)
PolarHT TM MOSFETs for very low RDS(on)
Type
VDSS
max.
RDSon
max.
Chip
type
Chip size
Source -
bond wire
recommended
Equivalent
device
data sheet
dimensions
PolarHT MOSFETs feature a proprietary cell design and
processing (patent pending) that has resulted in a
MOSFET with a 30% reduction in RDS(on) per unit area
along with a decrease in gate charge. IXYS has also
reduced the wafer thickness, which substantially
reduces thermal resistance. The combination of lower
RDS(on), lower gate charge and higher power dissipation
capability has resulted in a new family of MOSFETs,
which will increase the cost effectiveness in SMPS
applications. IXYS will also introduce HiPerFET
versions in which the trr of the body diode is reduced
to make them suitable for phase-shift bridges, motor
control and Uninterruptible Power Supply applications.
V
mΩ
mm
mils
IXTD 110N055P-5S
55
21
5S
6.20 x 5.20
244 x 205
12 mil x 3
IXTP 110N055P
IXTD 75N10P-5S
IXTD 110N10P-6S
IXTD 140N10P-7S
IXTD 170N10P-8S
IXTD 200N10P-88
100
150
200
250
300
31
22
20
15
15
5S
6S
7S
8S
88
6.20 x 5.20
6.86 x 6.86
8.91 x 7.15
13.34 x 7.14
11.13 x 7.15
244 x 205
270 x 270
351 x 281
438 x 281
525 x 281
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
IXTP 75N10P
IXTQ 110N10P
IXTQ 140N10P
IXTQ 170N10P
IXTK 200N10P
IXTD 62N15P-5S
IXTD 96N15P-6S
IXTD 120N15P-7S
IXTD 150N15P-8S
IXTD 180N15P-88
50
30
23
21
20
5S
6S
7S
8S
88
6.20 x 5.20
6.86 x 6.86
8.91 x 7.15
11.13 x 7.15
13.34 x 7.14
244 x 205
270 x 270
351 x 281
525 x 281
525 x 281
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
IXTP 62N15P
IXTQ 96N15P
IXTQ 120N15P
IXTQ 150N15P
IXTK 180N15P
IXTD 50N20P-5S
IXTD 74N20P-6S
IXTD 96N20P-7S
IXTD 120N20P-8S
IXTD 140N20P-88
75
42
30
28
24
5S
6S
7S
8S
88
6.20 x 5.20
6.86 x 6.86
8.91 x 7.15
11.13 x 7.15
13.34 x 7.14
244 x 205
270 x 270
351 x 281
525 x 281
525 x 281
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
IXTP 50N20P
IXTQ 74N20P
IXTQ 96N20P
IXTQ 120N20P
IXTK 140N20P
IXTD 42N25P-5S
IXTD 64N25P-6S
IXTD 82N25P-7S
IXTD 100N25P-8S
IXTD 120N25P-88
100
60
40
34
30
5S
6S
7S
8S
88
6.20 x 5.20
6.86 x 6.86
8.91 x 7.15
11.13 x 7.15
13.34 x 7.14
244 x 205
270 x 270
351 x 281
525 x 281
525 x 281
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
IXTP 42N25P
IXTQ 64N25P
IXTQ 82N25P
IXTQ 100N25P
IXTK 120N25P
IXTD 36N30P-5S
IXTD 52N30P-6S
IXTD 69N30P-7S
IXTD 88N30P-8S
IXTD 102N30P-88
135
82
60
50
40
5S
6S
7S
8S
88
6.20 x 5.20
6.86 x 6.86
8.91 x 7.15
11.13 x 7.15
13.34 x 7.14
244 x 205
270 x 270
351 x 281
525 x 281
525 x 281
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
IXTP 36N30P
IXTQ 52N30P
IXTQ 69N30P
IXTQ 88N30P
IXTK 102N30P
This table reflects only new designed chips. Please contact factory for older designs.
11
© 2004 IXYS All rights reserved
相关型号:
IXTD120N20P-8S
Power Field-Effect Transistor, 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE
IXYS
IXTD120N25P-88
Power Field-Effect Transistor, 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE
IXYS
IXTD12N90-7L
Power Field-Effect Transistor, 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-7
IXYS
IXTD16P20-5B
Power Field-Effect Transistor, 200V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.259 X 0.259 INCH, DIE
LITTELFUSE
IXTD170N10P-8S
Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.438 X 0.281 INCH, DIE
IXYS
IXTD180N15P-88
Power Field-Effect Transistor, 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE
IXYS
IXTD200N10P-88
Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE
IXYS
IXTD21N50
Power Field-Effect Transistor, 21A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE
MICROSEMI
IXTD24N50-7X
Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
IXYS
IXTD24P20-7B
Power Field-Effect Transistor, 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.348 X 0.283 INCH, DIE
LITTELFUSE
IXTD36N30P-5S
Power Field-Effect Transistor, 300V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.244 X 0.205 INCH, DIE
IXYS
IXTD36P10-5B
Power Field-Effect Transistor, 100V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.259 X 0.259 INCH, DIE
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明